Control of mesoscale and nanoscale ordering of organic semiconductors at the gate dielectric/semiconductor interface for organic transistors

Wi Hyoung Lee, Jeong Ho Cho, Kilwon Cho

Research output: Contribution to journalArticle

84 Citations (Scopus)

Abstract

In organic field-effect transistors (OFETs), the characteristics of the interface between the organic semiconductor and the gate dielectric are crucial determinants of device performance. We review recent progress in the control of mesoscale/nanoscale ordering of organic semiconductors at the gate dielectric. Issues concerning growth of the organic semiconductor on the surface-controlled gate dielectric, in-plane alignment of organic semiconductors, and self-assembled monolayers for organic semiconductors/dielectric are explored. We also discuss the effects of the molecular ordering and film morphologies of organic semiconductors on the electrical properties of OFETs.

Original languageEnglish
Pages (from-to)2549-2561
Number of pages13
JournalJournal of Materials Chemistry
Volume20
Issue number13
DOIs
Publication statusPublished - 2010 Mar 23

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Semiconducting organic compounds
Gate dielectrics
Transistors
Semiconductor materials
Organic field effect transistors
Self assembled monolayers
Electric properties

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

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Control of mesoscale and nanoscale ordering of organic semiconductors at the gate dielectric/semiconductor interface for organic transistors. / Lee, Wi Hyoung; Cho, Jeong Ho; Cho, Kilwon.

In: Journal of Materials Chemistry, Vol. 20, No. 13, 23.03.2010, p. 2549-2561.

Research output: Contribution to journalArticle

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