The adhesion of silica particles on an InGaAs surface in a 1/1/100 NH4OH-H2O2-H2O mixture (APM) solution was investigated. To control the particle adhesion on InGaAs surface, hexadecyltrimethylammonium bromide (CTAB) was added to the APM solution at concentrations of 10-4-10-2 M, and its effect was examined. To understand the adhesion behavior of silica particles on the InGaAs surface in the APM solution with the addition of CTAB, Lifshitz-van der Waals energy, acid-base interaction energy, and electrostatic energy were estimated. In addition, energy barrier was calculated from the changes in those energies. It was found that the behavior of the energy barrier was strongly related to the adhesion behavior of the silica particles on the InGaAs in the APM solution with different concentrations of CTAB. Therefore, the addition of CTAB changes the interaction force and the energy for particle to adhere to the InGaAs surface.
|Title of host publication||ECS Transactions|
|Publisher||Institute of Physics|
|Number of pages||6|
|Publication status||Published - 2022|
|Event||241st ECST Meeting - Vancouver, Canada|
Duration: 2022 May 29 → 2022 Jun 2
|Conference||241st ECST Meeting|
|Period||22/5/29 → 22/6/2|
Bibliographical notePublisher Copyright:
© 2022 ECS - The Electrochemical Society.
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