Control of surface residual -OH polar bonds in SiO2 aerogel film by silylation

Sang Bae Jung, Hyung-Ho Park

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

SiO2 aerogel film was effectively silylated with n-hexane solution containing 6 vol.% of trimethylchlorosilane (TMCS). Through the silylation, hydrophilic polar -OH bond was exchanged with hydrophobic non-polar -Si(CH3)3 bond. Approximately 12% of reduction in dielectric constant and almost 2 orders of improvement in leakage current were observed after the silylation. Silylation behavior was examined with various volume concentrations of TMCS. The silylation of SiO2 aerogel film with 70% porosity was maximized when using 6 vol.% of TMCS. The fully silylated film showed an excellent moisture-resistant behavior. Even after 5 days of exposure to an air atmosphere with 45-50% of controlled humidity, an increase in dielectric constant due to the generation of polar -OH bond through moisture absorption was not observed. It was clearly revealed that the improved film properties such as low dielectric constant, low leakage current and high resistance to moisture absorption could be obtained by exchanging terminal polar -OH bond with non-polar -Si(CH3)3 bond by the silylation with TMCS.

Original languageEnglish
Pages (from-to)503-507
Number of pages5
JournalThin Solid Films
Volume420-421
DOIs
Publication statusPublished - 2002 Dec 2

Fingerprint

Aerogels
aerogels
moisture
Permittivity
Moisture
permittivity
Leakage currents
leakage
Earth atmosphere
exchanging
high resistance
Hexane
humidity
Atmospheric humidity
Porosity
porosity
atmospheres
trimethylchlorosilane
air
Air

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{c00f6db1d8d743f2849d355edb1aff59,
title = "Control of surface residual -OH polar bonds in SiO2 aerogel film by silylation",
abstract = "SiO2 aerogel film was effectively silylated with n-hexane solution containing 6 vol.{\%} of trimethylchlorosilane (TMCS). Through the silylation, hydrophilic polar -OH bond was exchanged with hydrophobic non-polar -Si(CH3)3 bond. Approximately 12{\%} of reduction in dielectric constant and almost 2 orders of improvement in leakage current were observed after the silylation. Silylation behavior was examined with various volume concentrations of TMCS. The silylation of SiO2 aerogel film with 70{\%} porosity was maximized when using 6 vol.{\%} of TMCS. The fully silylated film showed an excellent moisture-resistant behavior. Even after 5 days of exposure to an air atmosphere with 45-50{\%} of controlled humidity, an increase in dielectric constant due to the generation of polar -OH bond through moisture absorption was not observed. It was clearly revealed that the improved film properties such as low dielectric constant, low leakage current and high resistance to moisture absorption could be obtained by exchanging terminal polar -OH bond with non-polar -Si(CH3)3 bond by the silylation with TMCS.",
author = "Jung, {Sang Bae} and Hyung-Ho Park",
year = "2002",
month = "12",
day = "2",
doi = "10.1016/S0040-6090(02)00835-0",
language = "English",
volume = "420-421",
pages = "503--507",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

Control of surface residual -OH polar bonds in SiO2 aerogel film by silylation. / Jung, Sang Bae; Park, Hyung-Ho.

In: Thin Solid Films, Vol. 420-421, 02.12.2002, p. 503-507.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Control of surface residual -OH polar bonds in SiO2 aerogel film by silylation

AU - Jung, Sang Bae

AU - Park, Hyung-Ho

PY - 2002/12/2

Y1 - 2002/12/2

N2 - SiO2 aerogel film was effectively silylated with n-hexane solution containing 6 vol.% of trimethylchlorosilane (TMCS). Through the silylation, hydrophilic polar -OH bond was exchanged with hydrophobic non-polar -Si(CH3)3 bond. Approximately 12% of reduction in dielectric constant and almost 2 orders of improvement in leakage current were observed after the silylation. Silylation behavior was examined with various volume concentrations of TMCS. The silylation of SiO2 aerogel film with 70% porosity was maximized when using 6 vol.% of TMCS. The fully silylated film showed an excellent moisture-resistant behavior. Even after 5 days of exposure to an air atmosphere with 45-50% of controlled humidity, an increase in dielectric constant due to the generation of polar -OH bond through moisture absorption was not observed. It was clearly revealed that the improved film properties such as low dielectric constant, low leakage current and high resistance to moisture absorption could be obtained by exchanging terminal polar -OH bond with non-polar -Si(CH3)3 bond by the silylation with TMCS.

AB - SiO2 aerogel film was effectively silylated with n-hexane solution containing 6 vol.% of trimethylchlorosilane (TMCS). Through the silylation, hydrophilic polar -OH bond was exchanged with hydrophobic non-polar -Si(CH3)3 bond. Approximately 12% of reduction in dielectric constant and almost 2 orders of improvement in leakage current were observed after the silylation. Silylation behavior was examined with various volume concentrations of TMCS. The silylation of SiO2 aerogel film with 70% porosity was maximized when using 6 vol.% of TMCS. The fully silylated film showed an excellent moisture-resistant behavior. Even after 5 days of exposure to an air atmosphere with 45-50% of controlled humidity, an increase in dielectric constant due to the generation of polar -OH bond through moisture absorption was not observed. It was clearly revealed that the improved film properties such as low dielectric constant, low leakage current and high resistance to moisture absorption could be obtained by exchanging terminal polar -OH bond with non-polar -Si(CH3)3 bond by the silylation with TMCS.

UR - http://www.scopus.com/inward/record.url?scp=0037011112&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037011112&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(02)00835-0

DO - 10.1016/S0040-6090(02)00835-0

M3 - Article

AN - SCOPUS:0037011112

VL - 420-421

SP - 503

EP - 507

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -