Control of the interfacial reaction in HfO 2 on Si-passivated GaAs

Sang Han Park, Yu Seon Kang, Jimin Chae, Hyo Jin Kim, Mann Ho Cho, Dae Hong Ko, Young Chul Byun, Hyoungsub Kim, Sang Wan Cho, Chung Yi Kim, Jung Hye Seo

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Abstract

The physical and electrical effects caused by interfacial reactions of HfO 2 on Si-passivated GaAs were investigated by various methods. The results showed that the Si layer decreases the diffusion and formation of GaO. Moreover, post-nitridation in HfO 2 /Si/GaAs significantly reduced the formation of AsO and GaO. The depth profiling data showed that two separated layered structures were formed with HfO 2 and a mixture of HfO 2 and SiO 2 after the annealing process. The crystalline structure and formation of GaO in the film affect the band offsets between GaAs and the high-k HfO 2 dielectric. Moreover, the Si passivation effectively suppressed the interfacial defects caused by GaO diffusion during the annealing treatment. The nitridation cause As diffusion to oxygen vacancy of HfO 2 result in the increase of the interfacial defect.

Original languageEnglish
Pages (from-to)375-381
Number of pages7
JournalApplied Surface Science
Volume283
DOIs
Publication statusPublished - 2013 Oct 15

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Park, S. H., Kang, Y. S., Chae, J., Kim, H. J., Cho, M. H., Ko, D. H., Byun, Y. C., Kim, H., Cho, S. W., Kim, C. Y., & Seo, J. H. (2013). Control of the interfacial reaction in HfO 2 on Si-passivated GaAs Applied Surface Science, 283, 375-381. https://doi.org/10.1016/j.apsusc.2013.06.118