Control of the interfacial reaction in HfO 2 on Si-passivated GaAs

Sang Han Park, Yu Seon Kang, Jimin Chae, Hyo Jin Kim, Mann Ho Cho, Dae Hong Ko, Young Chul Byun, Hyoungsub Kim, Sang Wan Cho, Chung Yi Kim, Jung Hye Seo

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The physical and electrical effects caused by interfacial reactions of HfO 2 on Si-passivated GaAs were investigated by various methods. The results showed that the Si layer decreases the diffusion and formation of GaO. Moreover, post-nitridation in HfO 2 /Si/GaAs significantly reduced the formation of AsO and GaO. The depth profiling data showed that two separated layered structures were formed with HfO 2 and a mixture of HfO 2 and SiO 2 after the annealing process. The crystalline structure and formation of GaO in the film affect the band offsets between GaAs and the high-k HfO 2 dielectric. Moreover, the Si passivation effectively suppressed the interfacial defects caused by GaO diffusion during the annealing treatment. The nitridation cause As diffusion to oxygen vacancy of HfO 2 result in the increase of the interfacial defect.

Original languageEnglish
Pages (from-to)375-381
Number of pages7
JournalApplied Surface Science
Volume283
DOIs
Publication statusPublished - 2013 Oct 15

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Surface chemistry
Nitridation
Annealing
Defects
Depth profiling
Oxygen vacancies
Passivation
Crystalline materials
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Park, Sang Han ; Kang, Yu Seon ; Chae, Jimin ; Kim, Hyo Jin ; Cho, Mann Ho ; Ko, Dae Hong ; Byun, Young Chul ; Kim, Hyoungsub ; Cho, Sang Wan ; Kim, Chung Yi ; Seo, Jung Hye. / Control of the interfacial reaction in HfO 2 on Si-passivated GaAs In: Applied Surface Science. 2013 ; Vol. 283. pp. 375-381.
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abstract = "The physical and electrical effects caused by interfacial reactions of HfO 2 on Si-passivated GaAs were investigated by various methods. The results showed that the Si layer decreases the diffusion and formation of GaO. Moreover, post-nitridation in HfO 2 /Si/GaAs significantly reduced the formation of AsO and GaO. The depth profiling data showed that two separated layered structures were formed with HfO 2 and a mixture of HfO 2 and SiO 2 after the annealing process. The crystalline structure and formation of GaO in the film affect the band offsets between GaAs and the high-k HfO 2 dielectric. Moreover, the Si passivation effectively suppressed the interfacial defects caused by GaO diffusion during the annealing treatment. The nitridation cause As diffusion to oxygen vacancy of HfO 2 result in the increase of the interfacial defect.",
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Park, SH, Kang, YS, Chae, J, Kim, HJ, Cho, MH, Ko, DH, Byun, YC, Kim, H, Cho, SW, Kim, CY & Seo, JH 2013, ' Control of the interfacial reaction in HfO 2 on Si-passivated GaAs ', Applied Surface Science, vol. 283, pp. 375-381. https://doi.org/10.1016/j.apsusc.2013.06.118

Control of the interfacial reaction in HfO 2 on Si-passivated GaAs . / Park, Sang Han; Kang, Yu Seon; Chae, Jimin; Kim, Hyo Jin; Cho, Mann Ho; Ko, Dae Hong; Byun, Young Chul; Kim, Hyoungsub; Cho, Sang Wan; Kim, Chung Yi; Seo, Jung Hye.

In: Applied Surface Science, Vol. 283, 15.10.2013, p. 375-381.

Research output: Contribution to journalArticle

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T1 - Control of the interfacial reaction in HfO 2 on Si-passivated GaAs

AU - Park, Sang Han

AU - Kang, Yu Seon

AU - Chae, Jimin

AU - Kim, Hyo Jin

AU - Cho, Mann Ho

AU - Ko, Dae Hong

AU - Byun, Young Chul

AU - Kim, Hyoungsub

AU - Cho, Sang Wan

AU - Kim, Chung Yi

AU - Seo, Jung Hye

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AB - The physical and electrical effects caused by interfacial reactions of HfO 2 on Si-passivated GaAs were investigated by various methods. The results showed that the Si layer decreases the diffusion and formation of GaO. Moreover, post-nitridation in HfO 2 /Si/GaAs significantly reduced the formation of AsO and GaO. The depth profiling data showed that two separated layered structures were formed with HfO 2 and a mixture of HfO 2 and SiO 2 after the annealing process. The crystalline structure and formation of GaO in the film affect the band offsets between GaAs and the high-k HfO 2 dielectric. Moreover, the Si passivation effectively suppressed the interfacial defects caused by GaO diffusion during the annealing treatment. The nitridation cause As diffusion to oxygen vacancy of HfO 2 result in the increase of the interfacial defect.

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