Abstract
The article presents the recent research development in controlling molecular and microstructures of thin ferroelectric polymer films for the application of non-volatile memory. A brief overview is given of the history of ferroelectric memory and device architectures based on ferroelectric polymers particularly emphasizing on the device elements such as metal/ferroelectric/ metal type capacitor, metal-ferroelectric-insulatorsemiconductor (MFIS) diodes and ferroelectric field effect transistor (FeFET) with ferroelectric poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (TrFE). Key material and process issues for optimizing the memory performance in each device architecture and thus realizing non-volatile ferroelectric polymer memory are in details discussed, including the control of crystal polymorphs, film thickness, various hetero-material interfaces between ferroelectric polymer and either metal or semiconductor, crystallization and crystal orientation. The current effort of micro and nanopatterning techniques is also addressed for high density and flexible memory arrays.
| Original language | English |
|---|---|
| Article number | 5539685 |
| Pages (from-to) | 1135-1163 |
| Number of pages | 29 |
| Journal | IEEE Transactions on Dielectrics and Electrical Insulation |
| Volume | 17 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2010 Aug 1 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
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Control of thin ferroelectric polymer films for non-volatile memory applications. / Park, Youn Jung; Bae, In Sung; Ju Kang, Seok; Chang, Jiyoun; Park, Cheolmin.
In: IEEE Transactions on Dielectrics and Electrical Insulation, Vol. 17, No. 4, 5539685, 01.08.2010, p. 1135-1163.Research output: Contribution to journal › Article
TY - JOUR
T1 - Control of thin ferroelectric polymer films for non-volatile memory applications
AU - Park, Youn Jung
AU - Bae, In Sung
AU - Ju Kang, Seok
AU - Chang, Jiyoun
AU - Park, Cheolmin
PY - 2010/8/1
Y1 - 2010/8/1
N2 - The article presents the recent research development in controlling molecular and microstructures of thin ferroelectric polymer films for the application of non-volatile memory. A brief overview is given of the history of ferroelectric memory and device architectures based on ferroelectric polymers particularly emphasizing on the device elements such as metal/ferroelectric/ metal type capacitor, metal-ferroelectric-insulatorsemiconductor (MFIS) diodes and ferroelectric field effect transistor (FeFET) with ferroelectric poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (TrFE). Key material and process issues for optimizing the memory performance in each device architecture and thus realizing non-volatile ferroelectric polymer memory are in details discussed, including the control of crystal polymorphs, film thickness, various hetero-material interfaces between ferroelectric polymer and either metal or semiconductor, crystallization and crystal orientation. The current effort of micro and nanopatterning techniques is also addressed for high density and flexible memory arrays.
AB - The article presents the recent research development in controlling molecular and microstructures of thin ferroelectric polymer films for the application of non-volatile memory. A brief overview is given of the history of ferroelectric memory and device architectures based on ferroelectric polymers particularly emphasizing on the device elements such as metal/ferroelectric/ metal type capacitor, metal-ferroelectric-insulatorsemiconductor (MFIS) diodes and ferroelectric field effect transistor (FeFET) with ferroelectric poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (TrFE). Key material and process issues for optimizing the memory performance in each device architecture and thus realizing non-volatile ferroelectric polymer memory are in details discussed, including the control of crystal polymorphs, film thickness, various hetero-material interfaces between ferroelectric polymer and either metal or semiconductor, crystallization and crystal orientation. The current effort of micro and nanopatterning techniques is also addressed for high density and flexible memory arrays.
UR - http://www.scopus.com/inward/record.url?scp=77955578406&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77955578406&partnerID=8YFLogxK
U2 - 10.1109/TDEI.2010.5539685
DO - 10.1109/TDEI.2010.5539685
M3 - Article
AN - SCOPUS:77955578406
VL - 17
SP - 1135
EP - 1163
JO - IEEE Transactions on Dielectrics and Electrical Insulation
JF - IEEE Transactions on Dielectrics and Electrical Insulation
SN - 1070-9878
IS - 4
M1 - 5539685
ER -