Control of thin ferroelectric polymer films for non-volatile memory applications

Youn Jung Park, In Sung Bae, Seok Ju Kang, Jiyoun Chang, Cheolmin Park

Research output: Contribution to journalArticle

95 Citations (Scopus)

Abstract

The article presents the recent research development in controlling molecular and microstructures of thin ferroelectric polymer films for the application of non-volatile memory. A brief overview is given of the history of ferroelectric memory and device architectures based on ferroelectric polymers particularly emphasizing on the device elements such as metal/ferroelectric/ metal type capacitor, metal-ferroelectric-insulatorsemiconductor (MFIS) diodes and ferroelectric field effect transistor (FeFET) with ferroelectric poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (TrFE). Key material and process issues for optimizing the memory performance in each device architecture and thus realizing non-volatile ferroelectric polymer memory are in details discussed, including the control of crystal polymorphs, film thickness, various hetero-material interfaces between ferroelectric polymer and either metal or semiconductor, crystallization and crystal orientation. The current effort of micro and nanopatterning techniques is also addressed for high density and flexible memory arrays.

Original languageEnglish
Article number5539685
Pages (from-to)1135-1163
Number of pages29
JournalIEEE Transactions on Dielectrics and Electrical Insulation
Volume17
Issue number4
DOIs
Publication statusPublished - 2010 Aug 1

Fingerprint

Ferroelectric films
Polymer films
Ferroelectric materials
Data storage equipment
Metals
Polymers
Field effect transistors
Polymorphism
Chemical elements
Crystal orientation
Film thickness
Diodes
Capacitors
Copolymers
Crystallization
Semiconductor materials
Crystals
Microstructure

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Park, Youn Jung ; Bae, In Sung ; Ju Kang, Seok ; Chang, Jiyoun ; Park, Cheolmin. / Control of thin ferroelectric polymer films for non-volatile memory applications. In: IEEE Transactions on Dielectrics and Electrical Insulation. 2010 ; Vol. 17, No. 4. pp. 1135-1163.
@article{a7a98c7460d04fd2ae8b9e21ee617946,
title = "Control of thin ferroelectric polymer films for non-volatile memory applications",
abstract = "The article presents the recent research development in controlling molecular and microstructures of thin ferroelectric polymer films for the application of non-volatile memory. A brief overview is given of the history of ferroelectric memory and device architectures based on ferroelectric polymers particularly emphasizing on the device elements such as metal/ferroelectric/ metal type capacitor, metal-ferroelectric-insulatorsemiconductor (MFIS) diodes and ferroelectric field effect transistor (FeFET) with ferroelectric poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (TrFE). Key material and process issues for optimizing the memory performance in each device architecture and thus realizing non-volatile ferroelectric polymer memory are in details discussed, including the control of crystal polymorphs, film thickness, various hetero-material interfaces between ferroelectric polymer and either metal or semiconductor, crystallization and crystal orientation. The current effort of micro and nanopatterning techniques is also addressed for high density and flexible memory arrays.",
author = "Park, {Youn Jung} and Bae, {In Sung} and {Ju Kang}, Seok and Jiyoun Chang and Cheolmin Park",
year = "2010",
month = "8",
day = "1",
doi = "10.1109/TDEI.2010.5539685",
language = "English",
volume = "17",
pages = "1135--1163",
journal = "IEEE Transactions on Dielectrics and Electrical Insulation",
issn = "1070-9878",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",

}

Control of thin ferroelectric polymer films for non-volatile memory applications. / Park, Youn Jung; Bae, In Sung; Ju Kang, Seok; Chang, Jiyoun; Park, Cheolmin.

In: IEEE Transactions on Dielectrics and Electrical Insulation, Vol. 17, No. 4, 5539685, 01.08.2010, p. 1135-1163.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Control of thin ferroelectric polymer films for non-volatile memory applications

AU - Park, Youn Jung

AU - Bae, In Sung

AU - Ju Kang, Seok

AU - Chang, Jiyoun

AU - Park, Cheolmin

PY - 2010/8/1

Y1 - 2010/8/1

N2 - The article presents the recent research development in controlling molecular and microstructures of thin ferroelectric polymer films for the application of non-volatile memory. A brief overview is given of the history of ferroelectric memory and device architectures based on ferroelectric polymers particularly emphasizing on the device elements such as metal/ferroelectric/ metal type capacitor, metal-ferroelectric-insulatorsemiconductor (MFIS) diodes and ferroelectric field effect transistor (FeFET) with ferroelectric poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (TrFE). Key material and process issues for optimizing the memory performance in each device architecture and thus realizing non-volatile ferroelectric polymer memory are in details discussed, including the control of crystal polymorphs, film thickness, various hetero-material interfaces between ferroelectric polymer and either metal or semiconductor, crystallization and crystal orientation. The current effort of micro and nanopatterning techniques is also addressed for high density and flexible memory arrays.

AB - The article presents the recent research development in controlling molecular and microstructures of thin ferroelectric polymer films for the application of non-volatile memory. A brief overview is given of the history of ferroelectric memory and device architectures based on ferroelectric polymers particularly emphasizing on the device elements such as metal/ferroelectric/ metal type capacitor, metal-ferroelectric-insulatorsemiconductor (MFIS) diodes and ferroelectric field effect transistor (FeFET) with ferroelectric poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (TrFE). Key material and process issues for optimizing the memory performance in each device architecture and thus realizing non-volatile ferroelectric polymer memory are in details discussed, including the control of crystal polymorphs, film thickness, various hetero-material interfaces between ferroelectric polymer and either metal or semiconductor, crystallization and crystal orientation. The current effort of micro and nanopatterning techniques is also addressed for high density and flexible memory arrays.

UR - http://www.scopus.com/inward/record.url?scp=77955578406&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955578406&partnerID=8YFLogxK

U2 - 10.1109/TDEI.2010.5539685

DO - 10.1109/TDEI.2010.5539685

M3 - Article

VL - 17

SP - 1135

EP - 1163

JO - IEEE Transactions on Dielectrics and Electrical Insulation

JF - IEEE Transactions on Dielectrics and Electrical Insulation

SN - 1070-9878

IS - 4

M1 - 5539685

ER -