Control over Electron-Phonon Interaction by Dirac Plasmon Engineering in the Bi2Se3 Topological Insulator

Chihun In, Sangwan Sim, Beom Kim, Hyemin Bae, Hyunseung Jung, Woosun Jang, Myungwoo Son, Jisoo Moon, Maryam Salehi, Seung Young Seo, Aloysius Soon, Moon Ho Ham, Hojin Lee, Seongshik Oh, Dohun Kim, Moon Ho Jo, Hyunyong Choi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Understanding the mutual interaction between electronic excitations and lattice vibrations is key for understanding electronic transport and optoelectronic phenomena. Dynamic manipulation of such interaction is elusive because it requires varying the material composition on the atomic level. In turn, recent studies on topological insulators (TIs) have revealed the coexistence of a strong phonon resonance and topologically protected Dirac plasmon, both in the terahertz (THz) frequency range. Here, using these intrinsic characteristics of TIs, we demonstrate a new methodology for controlling electron-phonon interaction by lithographically engineered Dirac surface plasmons in the Bi2Se3 TI. Through a series of time-domain and time-resolved ultrafast THz measurements, we show that, when the Dirac plasmon energy is less than the TI phonon energy, the electron-phonon coupling is trivial, exhibiting phonon broadening associated with Landau damping. In contrast, when the Dirac plasmon energy exceeds that of the phonon resonance, we observe suppressed electron-phonon interaction leading to unexpected phonon stiffening. Time-dependent analysis of the Dirac plasmon behavior, phonon broadening, and phonon stiffening reveals a transition between the distinct dynamics corresponding to the two regimes as the Dirac plasmon resonance moves across the TI phonon resonance, which demonstrates the capability of Dirac plasmon control. Our results suggest that the engineering of Dirac plasmons provides a new alternative for controlling the dynamic interaction between Dirac carriers and phonons.

Original languageEnglish
Pages (from-to)734-739
Number of pages6
JournalNano letters
Volume18
Issue number2
DOIs
Publication statusPublished - 2018 Feb 14

Fingerprint

Electron-phonon interactions
electron phonon interactions
insulators
engineering
Plasmons
stiffening
plasmons
Lattice vibrations
Phonons
Optoelectronic devices
Landau damping
lattice vibrations
interactions
electronics
Damping
energy
manipulators
phonons
frequency ranges
Electrons

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

In, Chihun ; Sim, Sangwan ; Kim, Beom ; Bae, Hyemin ; Jung, Hyunseung ; Jang, Woosun ; Son, Myungwoo ; Moon, Jisoo ; Salehi, Maryam ; Seo, Seung Young ; Soon, Aloysius ; Ham, Moon Ho ; Lee, Hojin ; Oh, Seongshik ; Kim, Dohun ; Jo, Moon Ho ; Choi, Hyunyong. / Control over Electron-Phonon Interaction by Dirac Plasmon Engineering in the Bi2Se3 Topological Insulator. In: Nano letters. 2018 ; Vol. 18, No. 2. pp. 734-739.
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abstract = "Understanding the mutual interaction between electronic excitations and lattice vibrations is key for understanding electronic transport and optoelectronic phenomena. Dynamic manipulation of such interaction is elusive because it requires varying the material composition on the atomic level. In turn, recent studies on topological insulators (TIs) have revealed the coexistence of a strong phonon resonance and topologically protected Dirac plasmon, both in the terahertz (THz) frequency range. Here, using these intrinsic characteristics of TIs, we demonstrate a new methodology for controlling electron-phonon interaction by lithographically engineered Dirac surface plasmons in the Bi2Se3 TI. Through a series of time-domain and time-resolved ultrafast THz measurements, we show that, when the Dirac plasmon energy is less than the TI phonon energy, the electron-phonon coupling is trivial, exhibiting phonon broadening associated with Landau damping. In contrast, when the Dirac plasmon energy exceeds that of the phonon resonance, we observe suppressed electron-phonon interaction leading to unexpected phonon stiffening. Time-dependent analysis of the Dirac plasmon behavior, phonon broadening, and phonon stiffening reveals a transition between the distinct dynamics corresponding to the two regimes as the Dirac plasmon resonance moves across the TI phonon resonance, which demonstrates the capability of Dirac plasmon control. Our results suggest that the engineering of Dirac plasmons provides a new alternative for controlling the dynamic interaction between Dirac carriers and phonons.",
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In, C, Sim, S, Kim, B, Bae, H, Jung, H, Jang, W, Son, M, Moon, J, Salehi, M, Seo, SY, Soon, A, Ham, MH, Lee, H, Oh, S, Kim, D, Jo, MH & Choi, H 2018, 'Control over Electron-Phonon Interaction by Dirac Plasmon Engineering in the Bi2Se3 Topological Insulator', Nano letters, vol. 18, no. 2, pp. 734-739. https://doi.org/10.1021/acs.nanolett.7b03897

Control over Electron-Phonon Interaction by Dirac Plasmon Engineering in the Bi2Se3 Topological Insulator. / In, Chihun; Sim, Sangwan; Kim, Beom; Bae, Hyemin; Jung, Hyunseung; Jang, Woosun; Son, Myungwoo; Moon, Jisoo; Salehi, Maryam; Seo, Seung Young; Soon, Aloysius; Ham, Moon Ho; Lee, Hojin; Oh, Seongshik; Kim, Dohun; Jo, Moon Ho; Choi, Hyunyong.

In: Nano letters, Vol. 18, No. 2, 14.02.2018, p. 734-739.

Research output: Contribution to journalArticle

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T1 - Control over Electron-Phonon Interaction by Dirac Plasmon Engineering in the Bi2Se3 Topological Insulator

AU - In, Chihun

AU - Sim, Sangwan

AU - Kim, Beom

AU - Bae, Hyemin

AU - Jung, Hyunseung

AU - Jang, Woosun

AU - Son, Myungwoo

AU - Moon, Jisoo

AU - Salehi, Maryam

AU - Seo, Seung Young

AU - Soon, Aloysius

AU - Ham, Moon Ho

AU - Lee, Hojin

AU - Oh, Seongshik

AU - Kim, Dohun

AU - Jo, Moon Ho

AU - Choi, Hyunyong

PY - 2018/2/14

Y1 - 2018/2/14

N2 - Understanding the mutual interaction between electronic excitations and lattice vibrations is key for understanding electronic transport and optoelectronic phenomena. Dynamic manipulation of such interaction is elusive because it requires varying the material composition on the atomic level. In turn, recent studies on topological insulators (TIs) have revealed the coexistence of a strong phonon resonance and topologically protected Dirac plasmon, both in the terahertz (THz) frequency range. Here, using these intrinsic characteristics of TIs, we demonstrate a new methodology for controlling electron-phonon interaction by lithographically engineered Dirac surface plasmons in the Bi2Se3 TI. Through a series of time-domain and time-resolved ultrafast THz measurements, we show that, when the Dirac plasmon energy is less than the TI phonon energy, the electron-phonon coupling is trivial, exhibiting phonon broadening associated with Landau damping. In contrast, when the Dirac plasmon energy exceeds that of the phonon resonance, we observe suppressed electron-phonon interaction leading to unexpected phonon stiffening. Time-dependent analysis of the Dirac plasmon behavior, phonon broadening, and phonon stiffening reveals a transition between the distinct dynamics corresponding to the two regimes as the Dirac plasmon resonance moves across the TI phonon resonance, which demonstrates the capability of Dirac plasmon control. Our results suggest that the engineering of Dirac plasmons provides a new alternative for controlling the dynamic interaction between Dirac carriers and phonons.

AB - Understanding the mutual interaction between electronic excitations and lattice vibrations is key for understanding electronic transport and optoelectronic phenomena. Dynamic manipulation of such interaction is elusive because it requires varying the material composition on the atomic level. In turn, recent studies on topological insulators (TIs) have revealed the coexistence of a strong phonon resonance and topologically protected Dirac plasmon, both in the terahertz (THz) frequency range. Here, using these intrinsic characteristics of TIs, we demonstrate a new methodology for controlling electron-phonon interaction by lithographically engineered Dirac surface plasmons in the Bi2Se3 TI. Through a series of time-domain and time-resolved ultrafast THz measurements, we show that, when the Dirac plasmon energy is less than the TI phonon energy, the electron-phonon coupling is trivial, exhibiting phonon broadening associated with Landau damping. In contrast, when the Dirac plasmon energy exceeds that of the phonon resonance, we observe suppressed electron-phonon interaction leading to unexpected phonon stiffening. Time-dependent analysis of the Dirac plasmon behavior, phonon broadening, and phonon stiffening reveals a transition between the distinct dynamics corresponding to the two regimes as the Dirac plasmon resonance moves across the TI phonon resonance, which demonstrates the capability of Dirac plasmon control. Our results suggest that the engineering of Dirac plasmons provides a new alternative for controlling the dynamic interaction between Dirac carriers and phonons.

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