To realize basic electronic units such as complementary metal-oxide-semiconductor (CMOS) inverters and other logic circuits, the selective and controllable fabrication of p- and n-type transistors with a low Schottky barrier height is highly desirable. Herein, an efficient and nondestructive technique of electron-charge transfer doping by depositing a thin Al2O3 layer on chemical vapor deposition (CVD)-grown 2H-MoTe2 is utilized to tune the doping from p- to n-type. Moreover, a type-controllable MoTe2 transistor with a low Schottky barrier height is prepared. The selectively converted n-type MoTe2 transistor from the p-channel exhibits a maximum on-state current of 10 µA, with a higher electron mobility of 8.9 cm2 V−1 s−1 at a drain voltage (Vds) of 1 V with a low Schottky barrier height of 28.4 meV. To validate the aforementioned approach, a prototype homogeneous CMOS inverter is fabricated on a CVD-grown 2H-MoTe2 single crystal. The proposed inverter exhibits a high DC voltage gain of 9.2 with good dynamic behavior up to a modulation frequency of 1 kHz. The proposed approach may have potential for realizing future 2D transition metal dichalcogenide-based efficient and ultrafast electronic units with high-density circuit components under a low-dimensional regime.
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF-2015R1A3A2066337).
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All Science Journal Classification (ASJC) codes
- Materials Science(all)