Controllable P- and N-Type Conversion of MoTe2 via Oxide Interfacial Layer for Logic Circuits

Yong Ju Park, Ajit K. Katiyar, Anh Tuan Hoang, Jong-Hyun Ahn

Research output: Contribution to journalArticle

Abstract

To realize basic electronic units such as complementary metal-oxide-semiconductor (CMOS) inverters and other logic circuits, the selective and controllable fabrication of p- and n-type transistors with a low Schottky barrier height is highly desirable. Herein, an efficient and nondestructive technique of electron-charge transfer doping by depositing a thin Al2O3 layer on chemical vapor deposition (CVD)-grown 2H-MoTe2 is utilized to tune the doping from p- to n-type. Moreover, a type-controllable MoTe2 transistor with a low Schottky barrier height is prepared. The selectively converted n-type MoTe2 transistor from the p-channel exhibits a maximum on-state current of 10 µA, with a higher electron mobility of 8.9 cm2 V−1 s−1 at a drain voltage (Vds) of 1 V with a low Schottky barrier height of 28.4 meV. To validate the aforementioned approach, a prototype homogeneous CMOS inverter is fabricated on a CVD-grown 2H-MoTe2 single crystal. The proposed inverter exhibits a high DC voltage gain of 9.2 with good dynamic behavior up to a modulation frequency of 1 kHz. The proposed approach may have potential for realizing future 2D transition metal dichalcogenide-based efficient and ultrafast electronic units with high-density circuit components under a low-dimensional regime.

Original languageEnglish
Article number1901772
JournalSmall
Volume15
Issue number28
DOIs
Publication statusPublished - 2019 Jul 12

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Logic circuits
Oxides
Semiconductors
Transistors
Metals
Chemical vapor deposition
Nijmegen Breakage Syndrome
Doping (additives)
Electrons
Electron mobility
Electric potential
Frequency modulation
Transition metals
Charge transfer
Single crystals
Fabrication
Networks (circuits)
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)
  • Engineering (miscellaneous)

Cite this

Park, Yong Ju ; Katiyar, Ajit K. ; Hoang, Anh Tuan ; Ahn, Jong-Hyun. / Controllable P- and N-Type Conversion of MoTe2 via Oxide Interfacial Layer for Logic Circuits. In: Small. 2019 ; Vol. 15, No. 28.
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Controllable P- and N-Type Conversion of MoTe2 via Oxide Interfacial Layer for Logic Circuits. / Park, Yong Ju; Katiyar, Ajit K.; Hoang, Anh Tuan; Ahn, Jong-Hyun.

In: Small, Vol. 15, No. 28, 1901772, 12.07.2019.

Research output: Contribution to journalArticle

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