Controllable resistance switching behavior of NiO/SiO2 double layers for nonvolatile memory applications

Ji Hyuk Choi, Sachindra Nath Das, Jae Min Myoung

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Resistive switching characteristics of the double layer (NiO/ SiO 2) were studied for possible nonvolatile memory applications. The effect of SiO2 thickness variation in the memory device was investigated. A repeatable resistance switching behavior was observed with on/off ratio 105. The operation voltage of the device depended on the thickness of SiO2 layer and it increases with increasing SiO 2 thickness. High-resolution transmission electron microscopy analyses revealed that the formation/rapture of Ni filament like percolation path inside SiO2 layer is responsible for the current transport mechanism.

Original languageEnglish
Article number062105
JournalApplied Physics Letters
Issue number6
Publication statusPublished - 2009

Bibliographical note

Funding Information:
This work was supported by Samsung Electronics Co. Ltd. (Grant No. 2008-8-2105) and the second stage of the Brain Korea 21 Project in 2008.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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