Resistive switching characteristics of the double layer (NiO/ SiO 2) were studied for possible nonvolatile memory applications. The effect of SiO2 thickness variation in the memory device was investigated. A repeatable resistance switching behavior was observed with on/off ratio 105. The operation voltage of the device depended on the thickness of SiO2 layer and it increases with increasing SiO 2 thickness. High-resolution transmission electron microscopy analyses revealed that the formation/rapture of Ni filament like percolation path inside SiO2 layer is responsible for the current transport mechanism.
Bibliographical noteFunding Information:
This work was supported by Samsung Electronics Co. Ltd. (Grant No. 2008-8-2105) and the second stage of the Brain Korea 21 Project in 2008.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)