Controlled band offset in (Gd2 O3) 1-x (SiO2) x (0≤x≤1) n-GaAs (001) structure

Jun Kyu Yang, Hyung-Ho Park

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

This letter investigates the chemistry and energy band structure of (Gd2 O3) 1-x (SiO2) x (0≤x≤1) films grown on n -GaAs (001). Dielectric band gap and interfacial band alignment of Gd2 O3 films were modified by compounding with SiO2. Binding energy shift of core level was observed from different electronegativity of second nearest-neighbor element. Controlled parameters of energy band structure were systematically characterized by valence band, absorption, and energy loss spectra. Assuming no Fermi level pinning in the midgap of n -GaAs, band offset values represent almost linear dependency on the concentration of SiO2. The correlation of band offset with the electrical properties, as probed by capacitance and leakage current measurements, was also discussed.

Original languageEnglish
Article number022104
JournalApplied Physics Letters
Volume87
Issue number2
DOIs
Publication statusPublished - 2005 Jul 11

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energy bands
compounding
leakage
energy dissipation
binding energy
capacitance
electrical properties
alignment
chemistry
valence
shift

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Controlled band offset in (Gd2 O3) 1-x (SiO2) x (0≤x≤1) n-GaAs (001) structure. / Yang, Jun Kyu; Park, Hyung-Ho.

In: Applied Physics Letters, Vol. 87, No. 2, 022104, 11.07.2005.

Research output: Contribution to journalArticle

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