Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

Min Sup Choi, Gwan Hyoung Lee, Young Jun Yu, Dae Yeong Lee, Seung Hwan Lee, Philip Kim, James Hone, Won Jong Yoo

Research output: Contribution to journalArticle

390 Citations (Scopus)

Abstract

Atomically thin two-dimensional materials have emerged as promising candidates for flexible and transparent electronic applications. Here we show non-volatile memory devices, based on field-effect transistors with large hysteresis, consisting entirely of stacked two-dimensional materials. Graphene and molybdenum disulphide were employed as both channel and charge-trapping layers, whereas hexagonal boron nitride was used as a tunnel barrier. In these ultrathin heterostructured memory devices, the atomically thin molybdenum disulphide or graphene-trapping layer stores charge tunnelled through hexagonal boron nitride, serving as a floating gate to control the charge transport in the graphene or molybdenum disulphide channel. By varying the thicknesses of two-dimensional materials and modifying the stacking order, the hysteresis and conductance polarity of the field-effect transistor can be controlled. These devices show high mobility, high on/off current ratio, large memory window and stable retention, providing a promising route towards flexible and transparent memory devices utilizing atomically thin two-dimensional materials.

Original languageEnglish
Article number1624
JournalNature communications
Volume4
DOIs
Publication statusPublished - 2013 Apr 11

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

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    Sup Choi, M., Lee, G. H., Yu, Y. J., Lee, D. Y., Hwan Lee, S., Kim, P., Hone, J., & Yoo, W. J. (2013). Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices. Nature communications, 4, [1624]. https://doi.org/10.1038/ncomms2652