Controlled doping of single crystalline diluted magnetic semiconductor Ga1-xMnxN nanowires

Yun Ki Byeun, Kyong Sop Han, Heon-Jin Choi, Sung Churl Choi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report on the optical and magnetic properties of single crystalline dilute magnetic semiconductor Ga1-xMnxN nanowires. The nanowires were fabricated by chemical vapor transport process, and had diameters of <100 nm and length of several μm. Controlled doping of manganese in the range of x = 0.01-0.08 was successfully achieved by varying the processing conditions. X-ray diffraction and transmission electron microscopy observation showed that the nanowires are single crystalline without any secondary phases. Photoluminescence emissions of all the doped nanowires were red-shifted (2.8 eV) compare to pure gallium nitride nanowires (3.3 eV) at room temperature. Ferromagnetism up to room temperature was observed in GaN1-xMnxN nanowires with x > 0.04.

Original languageEnglish
Pages (from-to)499-502
Number of pages4
JournalMaterials Science and Engineering A
Volume452-453
DOIs
Publication statusPublished - 2007 Apr 15

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Nanowires
nanowires
Doping (additives)
Crystalline materials
Magnetic semiconductors
Magnetic properties
Optical properties
Vapors
vapors
magnetic properties
optical properties
Diluted magnetic semiconductors

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "We report on the optical and magnetic properties of single crystalline dilute magnetic semiconductor Ga1-xMnxN nanowires. The nanowires were fabricated by chemical vapor transport process, and had diameters of <100 nm and length of several μm. Controlled doping of manganese in the range of x = 0.01-0.08 was successfully achieved by varying the processing conditions. X-ray diffraction and transmission electron microscopy observation showed that the nanowires are single crystalline without any secondary phases. Photoluminescence emissions of all the doped nanowires were red-shifted (2.8 eV) compare to pure gallium nitride nanowires (3.3 eV) at room temperature. Ferromagnetism up to room temperature was observed in GaN1-xMnxN nanowires with x > 0.04.",
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Controlled doping of single crystalline diluted magnetic semiconductor Ga1-xMnxN nanowires. / Byeun, Yun Ki; Han, Kyong Sop; Choi, Heon-Jin; Choi, Sung Churl.

In: Materials Science and Engineering A, Vol. 452-453, 15.04.2007, p. 499-502.

Research output: Contribution to journalArticle

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T1 - Controlled doping of single crystalline diluted magnetic semiconductor Ga1-xMnxN nanowires

AU - Byeun, Yun Ki

AU - Han, Kyong Sop

AU - Choi, Heon-Jin

AU - Choi, Sung Churl

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N2 - We report on the optical and magnetic properties of single crystalline dilute magnetic semiconductor Ga1-xMnxN nanowires. The nanowires were fabricated by chemical vapor transport process, and had diameters of <100 nm and length of several μm. Controlled doping of manganese in the range of x = 0.01-0.08 was successfully achieved by varying the processing conditions. X-ray diffraction and transmission electron microscopy observation showed that the nanowires are single crystalline without any secondary phases. Photoluminescence emissions of all the doped nanowires were red-shifted (2.8 eV) compare to pure gallium nitride nanowires (3.3 eV) at room temperature. Ferromagnetism up to room temperature was observed in GaN1-xMnxN nanowires with x > 0.04.

AB - We report on the optical and magnetic properties of single crystalline dilute magnetic semiconductor Ga1-xMnxN nanowires. The nanowires were fabricated by chemical vapor transport process, and had diameters of <100 nm and length of several μm. Controlled doping of manganese in the range of x = 0.01-0.08 was successfully achieved by varying the processing conditions. X-ray diffraction and transmission electron microscopy observation showed that the nanowires are single crystalline without any secondary phases. Photoluminescence emissions of all the doped nanowires were red-shifted (2.8 eV) compare to pure gallium nitride nanowires (3.3 eV) at room temperature. Ferromagnetism up to room temperature was observed in GaN1-xMnxN nanowires with x > 0.04.

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