Controlled post-sulfurization process for higher efficiency nontoxic solution-deposited CuIn0.7Ga0.3Se2 absorber thin films with graded bandgaps

Jin Woo Jang, Seung Min Lee, Ik Jin Choi, Yong Soo Cho

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A practical way of adjusting post-sulfurization process with variable durations is proposed to improve the cell-conversion efficiency of non-toxic solution driven CuIn0.7Ga0.3Se2 absorber thin films. The degree of bandgap grading was controllable by changing the sulfurization time from 2 min to 30 min due to the dissimilar distribution of sulfur across the absorber layer. Deeper intensified distributions of Ga and S were responsible for enhancements in the open-circuit voltage and cell-conversion efficiency. A competitive efficiency of ∼8.81% for the 10 min-sulfurized CIGSSe cell was achieved with other promising parameters, i.e., short-circuit current density of 33.17 mA/cm2, open-circuit voltage of 0.496 V, and fill factor of 53.5%, resulting from the improved carrier collection and reduced recombination by the bandgap grading. This improved efficiency corresponds to a ∼15.6% enhancement compared to the unsulfurized sample.

Original languageEnglish
Pages (from-to)177-181
Number of pages5
JournalJournal of Alloys and Compounds
Volume710
DOIs
Publication statusPublished - 2017 Jan 1

Fingerprint

Open circuit voltage
Conversion efficiency
Energy gap
Thin films
Sulfur
Short circuit currents
Current density

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{871497ce739147a2a984c52ab4b9361d,
title = "Controlled post-sulfurization process for higher efficiency nontoxic solution-deposited CuIn0.7Ga0.3Se2 absorber thin films with graded bandgaps",
abstract = "A practical way of adjusting post-sulfurization process with variable durations is proposed to improve the cell-conversion efficiency of non-toxic solution driven CuIn0.7Ga0.3Se2 absorber thin films. The degree of bandgap grading was controllable by changing the sulfurization time from 2 min to 30 min due to the dissimilar distribution of sulfur across the absorber layer. Deeper intensified distributions of Ga and S were responsible for enhancements in the open-circuit voltage and cell-conversion efficiency. A competitive efficiency of ∼8.81{\%} for the 10 min-sulfurized CIGSSe cell was achieved with other promising parameters, i.e., short-circuit current density of 33.17 mA/cm2, open-circuit voltage of 0.496 V, and fill factor of 53.5{\%}, resulting from the improved carrier collection and reduced recombination by the bandgap grading. This improved efficiency corresponds to a ∼15.6{\%} enhancement compared to the unsulfurized sample.",
author = "Jang, {Jin Woo} and Lee, {Seung Min} and Choi, {Ik Jin} and Cho, {Yong Soo}",
year = "2017",
month = "1",
day = "1",
doi = "10.1016/j.jallcom.2017.03.279",
language = "English",
volume = "710",
pages = "177--181",
journal = "Journal of Alloys and Compounds",
issn = "0925-8388",
publisher = "Elsevier BV",

}

Controlled post-sulfurization process for higher efficiency nontoxic solution-deposited CuIn0.7Ga0.3Se2 absorber thin films with graded bandgaps. / Jang, Jin Woo; Lee, Seung Min; Choi, Ik Jin; Cho, Yong Soo.

In: Journal of Alloys and Compounds, Vol. 710, 01.01.2017, p. 177-181.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Controlled post-sulfurization process for higher efficiency nontoxic solution-deposited CuIn0.7Ga0.3Se2 absorber thin films with graded bandgaps

AU - Jang, Jin Woo

AU - Lee, Seung Min

AU - Choi, Ik Jin

AU - Cho, Yong Soo

PY - 2017/1/1

Y1 - 2017/1/1

N2 - A practical way of adjusting post-sulfurization process with variable durations is proposed to improve the cell-conversion efficiency of non-toxic solution driven CuIn0.7Ga0.3Se2 absorber thin films. The degree of bandgap grading was controllable by changing the sulfurization time from 2 min to 30 min due to the dissimilar distribution of sulfur across the absorber layer. Deeper intensified distributions of Ga and S were responsible for enhancements in the open-circuit voltage and cell-conversion efficiency. A competitive efficiency of ∼8.81% for the 10 min-sulfurized CIGSSe cell was achieved with other promising parameters, i.e., short-circuit current density of 33.17 mA/cm2, open-circuit voltage of 0.496 V, and fill factor of 53.5%, resulting from the improved carrier collection and reduced recombination by the bandgap grading. This improved efficiency corresponds to a ∼15.6% enhancement compared to the unsulfurized sample.

AB - A practical way of adjusting post-sulfurization process with variable durations is proposed to improve the cell-conversion efficiency of non-toxic solution driven CuIn0.7Ga0.3Se2 absorber thin films. The degree of bandgap grading was controllable by changing the sulfurization time from 2 min to 30 min due to the dissimilar distribution of sulfur across the absorber layer. Deeper intensified distributions of Ga and S were responsible for enhancements in the open-circuit voltage and cell-conversion efficiency. A competitive efficiency of ∼8.81% for the 10 min-sulfurized CIGSSe cell was achieved with other promising parameters, i.e., short-circuit current density of 33.17 mA/cm2, open-circuit voltage of 0.496 V, and fill factor of 53.5%, resulting from the improved carrier collection and reduced recombination by the bandgap grading. This improved efficiency corresponds to a ∼15.6% enhancement compared to the unsulfurized sample.

UR - http://www.scopus.com/inward/record.url?scp=85016048836&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85016048836&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2017.03.279

DO - 10.1016/j.jallcom.2017.03.279

M3 - Article

AN - SCOPUS:85016048836

VL - 710

SP - 177

EP - 181

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

ER -