Abstract
Optical interconnection is projected to replace Cu wires as the data bandwidth exceeds the capacity of application processors. For compatibility with Si technologies, hetero-epitaxially grown Ge-on-Si is appropriate platform for fabricating optical sources. We investigated the effect of two-step growth on the strain in the epitaxial Ge-on-Si using an ultra-high vacuum E-beam evaporator. A low temperature regime produced a smooth Ge buffer layer without three-dimensional and a high growth temperature regime induced tensile strain in the epitaxial Ge films. The initial 0.10% of tensile stain on the as-grown Ge films was further increased to 0.23% after subsequent post-annealing.
| Original language | English |
|---|---|
| Pages (from-to) | P12-P14 |
| Journal | ECS Solid State Letters |
| Volume | 4 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Controlled tensile strain of ge films hetero-epitaxially grown on si substrates using e-beam evaporator. / Ki, Bugeun; Kim, Kyung Ho; Oh, Jungwoo.
In: ECS Solid State Letters, Vol. 4, No. 1, 01.01.2014, p. P12-P14.Research output: Contribution to journal › Article
TY - JOUR
T1 - Controlled tensile strain of ge films hetero-epitaxially grown on si substrates using e-beam evaporator
AU - Ki, Bugeun
AU - Kim, Kyung Ho
AU - Oh, Jungwoo
PY - 2014/1/1
Y1 - 2014/1/1
N2 - Optical interconnection is projected to replace Cu wires as the data bandwidth exceeds the capacity of application processors. For compatibility with Si technologies, hetero-epitaxially grown Ge-on-Si is appropriate platform for fabricating optical sources. We investigated the effect of two-step growth on the strain in the epitaxial Ge-on-Si using an ultra-high vacuum E-beam evaporator. A low temperature regime produced a smooth Ge buffer layer without three-dimensional and a high growth temperature regime induced tensile strain in the epitaxial Ge films. The initial 0.10% of tensile stain on the as-grown Ge films was further increased to 0.23% after subsequent post-annealing.
AB - Optical interconnection is projected to replace Cu wires as the data bandwidth exceeds the capacity of application processors. For compatibility with Si technologies, hetero-epitaxially grown Ge-on-Si is appropriate platform for fabricating optical sources. We investigated the effect of two-step growth on the strain in the epitaxial Ge-on-Si using an ultra-high vacuum E-beam evaporator. A low temperature regime produced a smooth Ge buffer layer without three-dimensional and a high growth temperature regime induced tensile strain in the epitaxial Ge films. The initial 0.10% of tensile stain on the as-grown Ge films was further increased to 0.23% after subsequent post-annealing.
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U2 - 10.1149/2.0071501ssl
DO - 10.1149/2.0071501ssl
M3 - Article
AN - SCOPUS:84924250143
VL - 4
SP - P12-P14
JO - ECS Solid State Letters
JF - ECS Solid State Letters
SN - 2162-8742
IS - 1
ER -