Controlled tensile strain of ge films hetero-epitaxially grown on si substrates using e-beam evaporator

Bugeun Ki, Kyung Ho Kim, Jungwoo Oh

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Optical interconnection is projected to replace Cu wires as the data bandwidth exceeds the capacity of application processors. For compatibility with Si technologies, hetero-epitaxially grown Ge-on-Si is appropriate platform for fabricating optical sources. We investigated the effect of two-step growth on the strain in the epitaxial Ge-on-Si using an ultra-high vacuum E-beam evaporator. A low temperature regime produced a smooth Ge buffer layer without three-dimensional and a high growth temperature regime induced tensile strain in the epitaxial Ge films. The initial 0.10% of tensile stain on the as-grown Ge films was further increased to 0.23% after subsequent post-annealing.

Original languageEnglish
Pages (from-to)P12-P14
JournalECS Solid State Letters
Volume4
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Tensile strain
Evaporators
Optical interconnects
Ultrahigh vacuum
Growth temperature
Substrates
Buffer layers
Light sources
Coloring Agents
Wire
Annealing
Bandwidth
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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Controlled tensile strain of ge films hetero-epitaxially grown on si substrates using e-beam evaporator. / Ki, Bugeun; Kim, Kyung Ho; Oh, Jungwoo.

In: ECS Solid State Letters, Vol. 4, No. 1, 01.01.2014, p. P12-P14.

Research output: Contribution to journalArticle

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