Controlled tensile strain of ge films hetero-epitaxially grown on si substrates using e-beam evaporator

Engineering

• Annealing 50%
• Bandwidth 50%
• Buffer Layer 50%
• Compatibility 50%
• Evaporator 100%
• Growth Temperature 50%
• Low-Temperature 50%
• Optical Source 50%
• Si Substrate 50%
• Tensile Strain 100%
• Tensiles 50%

Material Science

• Buffer Layer 50%
• Tensile Strain 100%