Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates

Jungwoo Oh, Prashant Majhi, Hideok Lee, Ooksang Yoo, Sehoon Lee, Sanjay Banerjee, Hsing Huang Tseng, Raj Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
Original languageEnglish
Title of host publication2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Pages40-41
Number of pages2
DOIs
Publication statusPublished - 2008 Aug 14
Event2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan, Province of China
Duration: 2008 Apr 212008 Apr 23

Other

Other2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
CountryTaiwan, Province of China
CityHsinchu
Period08/4/2108/4/23

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Threshold voltage
Substrates
Metals

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Oh, J., Majhi, P., Lee, H., Yoo, O., Lee, S., Banerjee, S., ... Jammy, R. (2008). Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA (pp. 40-41). [4530789] https://doi.org/10.1109/VTSA.2008.4530789
Oh, Jungwoo ; Majhi, Prashant ; Lee, Hideok ; Yoo, Ooksang ; Lee, Sehoon ; Banerjee, Sanjay ; Tseng, Hsing Huang ; Jammy, Raj. / Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates. 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. pp. 40-41
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title = "Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates",
author = "Jungwoo Oh and Prashant Majhi and Hideok Lee and Ooksang Yoo and Sehoon Lee and Sanjay Banerjee and Tseng, {Hsing Huang} and Raj Jammy",
year = "2008",
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doi = "10.1109/VTSA.2008.4530789",
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Oh, J, Majhi, P, Lee, H, Yoo, O, Lee, S, Banerjee, S, Tseng, HH & Jammy, R 2008, Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates. in 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA., 4530789, pp. 40-41, 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA, Hsinchu, Taiwan, Province of China, 08/4/21. https://doi.org/10.1109/VTSA.2008.4530789

Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates. / Oh, Jungwoo; Majhi, Prashant; Lee, Hideok; Yoo, Ooksang; Lee, Sehoon; Banerjee, Sanjay; Tseng, Hsing Huang; Jammy, Raj.

2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 40-41 4530789.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates

AU - Oh, Jungwoo

AU - Majhi, Prashant

AU - Lee, Hideok

AU - Yoo, Ooksang

AU - Lee, Sehoon

AU - Banerjee, Sanjay

AU - Tseng, Hsing Huang

AU - Jammy, Raj

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DO - 10.1109/VTSA.2008.4530789

M3 - Conference contribution

SN - 9781424416158

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EP - 41

BT - 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

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Oh J, Majhi P, Lee H, Yoo O, Lee S, Banerjee S et al. Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 40-41. 4530789 https://doi.org/10.1109/VTSA.2008.4530789