Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates

Jungwoo Oh; Prashant Majhi; Hideok Lee; Ooksang Yoo; Sehoon Lee; Sanjay Banerjee; Hsing Huang Tseng; Raj Jammy

doi:10.1109/VTSA.2008.4530789

Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates

Jungwoo Oh, Prashant Majhi, Hideok Lee, Ooksang Yoo, Sehoon Lee, Sanjay Banerjee, Hsing Huang Tseng, Raj Jammy

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Original language	English
Title of host publication	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Pages	40-41
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2008.4530789
Publication status	Published - 2008
Event	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan, Province of China Duration: 2008 Apr 21 → 2008 Apr 23

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	08/4/21 → 08/4/23

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/VTSA.2008.4530789

Cite this

Oh, J., Majhi, P., Lee, H., Yoo, O., Lee, S., Banerjee, S., Tseng, H. H., & Jammy, R. (2008). Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA (pp. 40-41). [4530789] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2008.4530789

@inproceedings{80f5c5743e9e4011b3e9da8e2d50c040,

title = "Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates",

author = "Jungwoo Oh and Prashant Majhi and Hideok Lee and Ooksang Yoo and Sehoon Lee and Sanjay Banerjee and Tseng, {Hsing Huang} and Raj Jammy",

year = "2008",

doi = "10.1109/VTSA.2008.4530789",

language = "English",

isbn = "9781424416158",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "40--41",

booktitle = "2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA",

note = "2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA ; Conference date: 21-04-2008 Through 23-04-2008",

}

Oh, J, Majhi, P, Lee, H, Yoo, O, Lee, S, Banerjee, S, Tseng, HH & Jammy, R 2008, Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates. in 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA., 4530789, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 40-41, 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA, Hsinchu, Taiwan, Province of China, 08/4/21. https://doi.org/10.1109/VTSA.2008.4530789

Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates. / Oh, Jungwoo; Majhi, Prashant; Lee, Hideok et al.

2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 40-41 4530789 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates

AU - Oh, Jungwoo

AU - Majhi, Prashant

AU - Lee, Hideok

AU - Yoo, Ooksang

AU - Lee, Sehoon

AU - Banerjee, Sanjay

AU - Tseng, Hsing Huang

AU - Jammy, Raj

PY - 2008

Y1 - 2008

UR - http://www.scopus.com/inward/record.url?scp=49049116104&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49049116104&partnerID=8YFLogxK

U2 - 10.1109/VTSA.2008.4530789

DO - 10.1109/VTSA.2008.4530789

M3 - Conference contribution

AN - SCOPUS:49049116104

SN - 9781424416158

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 40

EP - 41

BT - 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

T2 - 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

Y2 - 21 April 2008 through 23 April 2008

ER -

Oh J, Majhi P, Lee H, Yoo O, Lee S, Banerjee S et al. Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 40-41. 4530789. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2008.4530789

Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates

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Other

All Science Journal Classification (ASJC) codes

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