Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates

Jungwoo Oh, Prashant Majhi, Hideok Lee, Ooksang Yoo, Sehoon Lee, Sanjay Banerjee, Hsing Huang Tseng, Raj Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
Original languageEnglish
Title of host publication2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Pages40-41
Number of pages2
DOIs
Publication statusPublished - 2008 Aug 14
Event2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan, Province of China
Duration: 2008 Apr 212008 Apr 23

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
CountryTaiwan, Province of China
CityHsinchu
Period08/4/2108/4/23

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Oh, J., Majhi, P., Lee, H., Yoo, O., Lee, S., Banerjee, S., Tseng, H. H., & Jammy, R. (2008). Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA (pp. 40-41). [4530789] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2008.4530789