Controlled topology of block copolymer gate insulators by selective etching of cylindrical microdomains in pentacene organic thin film transistors

Pil Sung Jo, Jinwoo Sung, Cheolmin Park, Eunhye Kim, Du Yeol Ryu, Seungmoon Pyo, Ho Cheol Kim, Jae Min Hong

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

We investigate the effect of surface topology of a block copolymer/neutral surface/SiO2 trilayered gate insulator on the properties of pentacene organic thin film transistor (OTFT) by the controlled etching of self assembled poly(styrene-b-methyl methacrylate) (PS-b-PMMA) block copolymer. The rms roughness of the uppermost block copolymer film directly in contact with pentacenes was systematically controlled from 0.27 nm to approximately 12.5nm by the selective etching of cylindrical PMMA microdomains hexagonally packed and aligned perpendicular to SiO2 layer with 20 and 38 nm of diameter and periodicity, respectively. Both mobility and On/Off ratio were significantly reduced by more than 3 orders of magnitudes with the film roughness in OTFTs having 60 nm thick pentacene active layer. The poor device performance observed with the etched thin film of block copolymer dielectric is attributed to a defective pentacene active layer and the mixed crystalline structure consisting of thin film and bulk phase arising from the massive nucleation of pentacene preferentially at the edge of each cylindrical etched hole.

Original languageEnglish
Pages (from-to)1202-1211
Number of pages10
JournalAdvanced Functional Materials
Volume18
Issue number8
DOIs
Publication statusPublished - 2008 Apr 25

Fingerprint

Thin film transistors
block copolymers
Block copolymers
Etching
transistors
topology
Topology
insulators
etching
thin films
roughness
Surface roughness
Thin films
Styrene
Methacrylates
Polymethyl Methacrylate
periodic variations
polystyrene
Nucleation
nucleation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Condensed Matter Physics
  • Electrochemistry

Cite this

Jo, Pil Sung ; Sung, Jinwoo ; Park, Cheolmin ; Kim, Eunhye ; Ryu, Du Yeol ; Pyo, Seungmoon ; Kim, Ho Cheol ; Hong, Jae Min. / Controlled topology of block copolymer gate insulators by selective etching of cylindrical microdomains in pentacene organic thin film transistors. In: Advanced Functional Materials. 2008 ; Vol. 18, No. 8. pp. 1202-1211.
@article{1609faea086444b89fb3070a36f71639,
title = "Controlled topology of block copolymer gate insulators by selective etching of cylindrical microdomains in pentacene organic thin film transistors",
abstract = "We investigate the effect of surface topology of a block copolymer/neutral surface/SiO2 trilayered gate insulator on the properties of pentacene organic thin film transistor (OTFT) by the controlled etching of self assembled poly(styrene-b-methyl methacrylate) (PS-b-PMMA) block copolymer. The rms roughness of the uppermost block copolymer film directly in contact with pentacenes was systematically controlled from 0.27 nm to approximately 12.5nm by the selective etching of cylindrical PMMA microdomains hexagonally packed and aligned perpendicular to SiO2 layer with 20 and 38 nm of diameter and periodicity, respectively. Both mobility and On/Off ratio were significantly reduced by more than 3 orders of magnitudes with the film roughness in OTFTs having 60 nm thick pentacene active layer. The poor device performance observed with the etched thin film of block copolymer dielectric is attributed to a defective pentacene active layer and the mixed crystalline structure consisting of thin film and bulk phase arising from the massive nucleation of pentacene preferentially at the edge of each cylindrical etched hole.",
author = "Jo, {Pil Sung} and Jinwoo Sung and Cheolmin Park and Eunhye Kim and Ryu, {Du Yeol} and Seungmoon Pyo and Kim, {Ho Cheol} and Hong, {Jae Min}",
year = "2008",
month = "4",
day = "25",
doi = "10.1002/adfm.200701034",
language = "English",
volume = "18",
pages = "1202--1211",
journal = "Advanced Functional Materials",
issn = "1616-301X",
publisher = "Wiley-VCH Verlag",
number = "8",

}

Controlled topology of block copolymer gate insulators by selective etching of cylindrical microdomains in pentacene organic thin film transistors. / Jo, Pil Sung; Sung, Jinwoo; Park, Cheolmin; Kim, Eunhye; Ryu, Du Yeol; Pyo, Seungmoon; Kim, Ho Cheol; Hong, Jae Min.

In: Advanced Functional Materials, Vol. 18, No. 8, 25.04.2008, p. 1202-1211.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Controlled topology of block copolymer gate insulators by selective etching of cylindrical microdomains in pentacene organic thin film transistors

AU - Jo, Pil Sung

AU - Sung, Jinwoo

AU - Park, Cheolmin

AU - Kim, Eunhye

AU - Ryu, Du Yeol

AU - Pyo, Seungmoon

AU - Kim, Ho Cheol

AU - Hong, Jae Min

PY - 2008/4/25

Y1 - 2008/4/25

N2 - We investigate the effect of surface topology of a block copolymer/neutral surface/SiO2 trilayered gate insulator on the properties of pentacene organic thin film transistor (OTFT) by the controlled etching of self assembled poly(styrene-b-methyl methacrylate) (PS-b-PMMA) block copolymer. The rms roughness of the uppermost block copolymer film directly in contact with pentacenes was systematically controlled from 0.27 nm to approximately 12.5nm by the selective etching of cylindrical PMMA microdomains hexagonally packed and aligned perpendicular to SiO2 layer with 20 and 38 nm of diameter and periodicity, respectively. Both mobility and On/Off ratio were significantly reduced by more than 3 orders of magnitudes with the film roughness in OTFTs having 60 nm thick pentacene active layer. The poor device performance observed with the etched thin film of block copolymer dielectric is attributed to a defective pentacene active layer and the mixed crystalline structure consisting of thin film and bulk phase arising from the massive nucleation of pentacene preferentially at the edge of each cylindrical etched hole.

AB - We investigate the effect of surface topology of a block copolymer/neutral surface/SiO2 trilayered gate insulator on the properties of pentacene organic thin film transistor (OTFT) by the controlled etching of self assembled poly(styrene-b-methyl methacrylate) (PS-b-PMMA) block copolymer. The rms roughness of the uppermost block copolymer film directly in contact with pentacenes was systematically controlled from 0.27 nm to approximately 12.5nm by the selective etching of cylindrical PMMA microdomains hexagonally packed and aligned perpendicular to SiO2 layer with 20 and 38 nm of diameter and periodicity, respectively. Both mobility and On/Off ratio were significantly reduced by more than 3 orders of magnitudes with the film roughness in OTFTs having 60 nm thick pentacene active layer. The poor device performance observed with the etched thin film of block copolymer dielectric is attributed to a defective pentacene active layer and the mixed crystalline structure consisting of thin film and bulk phase arising from the massive nucleation of pentacene preferentially at the edge of each cylindrical etched hole.

UR - http://www.scopus.com/inward/record.url?scp=43249108629&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43249108629&partnerID=8YFLogxK

U2 - 10.1002/adfm.200701034

DO - 10.1002/adfm.200701034

M3 - Article

AN - SCOPUS:43249108629

VL - 18

SP - 1202

EP - 1211

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

IS - 8

ER -