In the recent semiconductor mass production, the tri-layer hardmask system has become crucial for successful patterning in many applications. Silicon-based anti-reflective spin-on hardmask (Si-SOH), which can be built by spin-on coating, is desirable in terms of mass production throughput and the overall cost of ownership. As the pattern size shrinks, the thickness of photoresist also becomes thinner, which forces the thickness of Si-SOH to be thinner resulting in a tighter thickness margin. In this case, controlling optical properties of Si-SOH becomes important in order to achieve low reflectivity in the exposure process. In addition, the tri-layer system can be set up more easily when the etch properties of Si-SOH can be controlled. Previously, we reported papers on silicon-based anti-reflective spin-on hardmask materials for 193 nm lithography, immersion ArF lithography, and optimization of optical properties of Si-SOH. In this paper, the technique for controlling etch properties of Si-SOH by a different type of monomer is described. To control etch properties in the same resin platform, the synthesis method was modified. Characterization of the Si-SOH synthesized by the new technique and the lithographic performance using this material are described in detail.