Abstract
We studied optical properties of thermally annealed Ge-on-Si. From Raman experiments, tensile strain as well as Si-Ge intermixing were investigated. Significant Γ-band transition peak-shift was confirmed by photoluminescence depending on the thermal annealing conditions.
| Original language | English |
|---|---|
| Title of host publication | 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Volume | 1 |
| ISBN (Electronic) | 9781467371094 |
| DOIs | |
| Publication status | Published - 2016 Jan 7 |
| Event | 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 - Busan, Korea, Republic of Duration: 2015 Aug 24 → 2015 Aug 28 |
Other
| Other | 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 |
|---|---|
| Country | Korea, Republic of |
| City | Busan |
| Period | 15/8/24 → 15/8/28 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
Cite this
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Controlling optical properties of Ge-on-Si by thermal annealing and etching process. / Lee, Chulwon; Ki, Bugeun; Yoo, Yang Seok; Jang, Min Ho; Oh, Jungwoo; Cho, Yong Hoon.
2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. Vol. 1 Institute of Electrical and Electronics Engineers Inc., 2016. 7375929.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Controlling optical properties of Ge-on-Si by thermal annealing and etching process
AU - Lee, Chulwon
AU - Ki, Bugeun
AU - Yoo, Yang Seok
AU - Jang, Min Ho
AU - Oh, Jungwoo
AU - Cho, Yong Hoon
PY - 2016/1/7
Y1 - 2016/1/7
N2 - We studied optical properties of thermally annealed Ge-on-Si. From Raman experiments, tensile strain as well as Si-Ge intermixing were investigated. Significant Γ-band transition peak-shift was confirmed by photoluminescence depending on the thermal annealing conditions.
AB - We studied optical properties of thermally annealed Ge-on-Si. From Raman experiments, tensile strain as well as Si-Ge intermixing were investigated. Significant Γ-band transition peak-shift was confirmed by photoluminescence depending on the thermal annealing conditions.
UR - http://www.scopus.com/inward/record.url?scp=84962799414&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84962799414&partnerID=8YFLogxK
U2 - 10.1109/CLEOPR.2015.7375929
DO - 10.1109/CLEOPR.2015.7375929
M3 - Conference contribution
VL - 1
BT - 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
PB - Institute of Electrical and Electronics Engineers Inc.
ER -