Controlling phosphorus doping concentration in ZnO nanorods by low temperature hydrothermal method

Sung Hwan Hwang; Kyeong Ju Moon; Tae Il Lee; Woong Lee; Jae Min Myoung

doi:10.1016/j.matchemphys.2013.09.038

Controlling phosphorus doping concentration in ZnO nanorods by low temperature hydrothermal method

Sung Hwan Hwang, Kyeong Ju Moon, Tae Il Lee, Woong Lee, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Phosphorous-doped ZnO nanorods (NRs) were synthesized with controllable morphology and doping concentration on top of the array of undoped natural n-type ZnO NRs by hydrothermal process. By changing the concentration of NH ₄OH to adjust the pH of the reactant solution containing zinc acetate, hexamethylenetetramine, and ammonium phosphate, it was possible to control the morphology, doping concentration, and band structure of the ZnO nanostructures formed on the top side of the undoped NRs array. When the NH ₄OH concentration was 1 vol% substitutional dopant P formed shallow acceptor levels in the ZnO NRs, while higher NH₄OH concentration resulted in the formation of donor levels as well as the compensation of the acceptors. A model p-n homojunction device based on the P-doped ZnO NRs consecutively attached to the initially synthesized n-type NRs showed a rectifying junction behavior confirming the formation of the p-type ZnO NRs with low doping concentration of P.

Original language	English
Pages (from-to)	600-604
Number of pages	5
Journal	Materials Chemistry and Physics
Volume	143
Issue number	2
DOIs	https://doi.org/10.1016/j.matchemphys.2013.09.038
Publication status	Published - 2014 Jan 15

Bibliographical note

Funding Information:
This work was supported by the WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( R32-20031 ) and by the LG Display Academic Industrial Cooperation Program .

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

Access to Document

10.1016/j.matchemphys.2013.09.038

Cite this

@article{14eaff4a7e5f4dc28898cf3a6ba99ef3,

title = "Controlling phosphorus doping concentration in ZnO nanorods by low temperature hydrothermal method",

abstract = "Phosphorous-doped ZnO nanorods (NRs) were synthesized with controllable morphology and doping concentration on top of the array of undoped natural n-type ZnO NRs by hydrothermal process. By changing the concentration of NH 4OH to adjust the pH of the reactant solution containing zinc acetate, hexamethylenetetramine, and ammonium phosphate, it was possible to control the morphology, doping concentration, and band structure of the ZnO nanostructures formed on the top side of the undoped NRs array. When the NH 4OH concentration was 1 vol% substitutional dopant P formed shallow acceptor levels in the ZnO NRs, while higher NH4OH concentration resulted in the formation of donor levels as well as the compensation of the acceptors. A model p-n homojunction device based on the P-doped ZnO NRs consecutively attached to the initially synthesized n-type NRs showed a rectifying junction behavior confirming the formation of the p-type ZnO NRs with low doping concentration of P.",

author = "Hwang, {Sung Hwan} and Moon, {Kyeong Ju} and Lee, {Tae Il} and Woong Lee and Myoung, {Jae Min}",

note = "Funding Information: This work was supported by the WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( R32-20031 ) and by the LG Display Academic Industrial Cooperation Program .",

year = "2014",

month = jan,

day = "15",

doi = "10.1016/j.matchemphys.2013.09.038",

language = "English",

volume = "143",

pages = "600--604",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier BV",

number = "2",

}

TY - JOUR

T1 - Controlling phosphorus doping concentration in ZnO nanorods by low temperature hydrothermal method

AU - Hwang, Sung Hwan

AU - Moon, Kyeong Ju

AU - Lee, Tae Il

AU - Lee, Woong

AU - Myoung, Jae Min

N1 - Funding Information: This work was supported by the WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( R32-20031 ) and by the LG Display Academic Industrial Cooperation Program .

PY - 2014/1/15

Y1 - 2014/1/15

N2 - Phosphorous-doped ZnO nanorods (NRs) were synthesized with controllable morphology and doping concentration on top of the array of undoped natural n-type ZnO NRs by hydrothermal process. By changing the concentration of NH 4OH to adjust the pH of the reactant solution containing zinc acetate, hexamethylenetetramine, and ammonium phosphate, it was possible to control the morphology, doping concentration, and band structure of the ZnO nanostructures formed on the top side of the undoped NRs array. When the NH 4OH concentration was 1 vol% substitutional dopant P formed shallow acceptor levels in the ZnO NRs, while higher NH4OH concentration resulted in the formation of donor levels as well as the compensation of the acceptors. A model p-n homojunction device based on the P-doped ZnO NRs consecutively attached to the initially synthesized n-type NRs showed a rectifying junction behavior confirming the formation of the p-type ZnO NRs with low doping concentration of P.

AB - Phosphorous-doped ZnO nanorods (NRs) were synthesized with controllable morphology and doping concentration on top of the array of undoped natural n-type ZnO NRs by hydrothermal process. By changing the concentration of NH 4OH to adjust the pH of the reactant solution containing zinc acetate, hexamethylenetetramine, and ammonium phosphate, it was possible to control the morphology, doping concentration, and band structure of the ZnO nanostructures formed on the top side of the undoped NRs array. When the NH 4OH concentration was 1 vol% substitutional dopant P formed shallow acceptor levels in the ZnO NRs, while higher NH4OH concentration resulted in the formation of donor levels as well as the compensation of the acceptors. A model p-n homojunction device based on the P-doped ZnO NRs consecutively attached to the initially synthesized n-type NRs showed a rectifying junction behavior confirming the formation of the p-type ZnO NRs with low doping concentration of P.

UR - http://www.scopus.com/inward/record.url?scp=84888204159&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84888204159&partnerID=8YFLogxK

U2 - 10.1016/j.matchemphys.2013.09.038

DO - 10.1016/j.matchemphys.2013.09.038

M3 - Article

AN - SCOPUS:84888204159

SN - 0254-0584

VL - 143

SP - 600

EP - 604

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 2

ER -

Controlling phosphorus doping concentration in ZnO nanorods by low temperature hydrothermal method

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this