Controlling the charge carrier density of black phosphorus in a rapid plasma doping process

Dae Kyoung Kim, Seok Bo Hong, Mann Ho Cho

Research output: Contribution to journalArticlepeer-review


We investigated the control of the charge carrier density of black phosphorus (BP) 2D nanosheets in a rapid plasma doping process. The electronic structure of plasma boron-doped BP was investigated using X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. The characteristics of a doped BP device were evaluated by fabricating a field-effect transistor under spatially controlled doping in BP nanosheets. The results confirmed the incorporation of ionized boron through the plasma doping process, resulting in the donation of strongly electron dope (electron mobility: ~275 cm2/V·s) on the boron-doped BP switching device. In particular, the fabricated p–n homojunction of the BP device showed an excellent photodetection behavior. This work provides a rapid and stable plasma doping technique for two-dimensional nanosheets employed in next-generation electronic and optoelectronic devices.

Original languageEnglish
Pages (from-to)176-179
Number of pages4
JournalApplied Science and Convergence Technology
Issue number6
Publication statusPublished - 2020 Nov

Bibliographical note

Funding Information:
This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (Grant No. 2017R1A5A1014862, SRC program vdWMRC center).

Publisher Copyright:
© 2020, Korean Vacuum Society. All rights reserved.

All Science Journal Classification (ASJC) codes

  • Materials Science (miscellaneous)
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering


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