Converting dimensions: A facile and high-yield route for getting sub-100 nm silicon nanowires

Sang Hoon Lee, Sung Hwan Hwang, Tae Il Lee, Jae Min Myoung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To get circular and regular sub-100 nm Si nanowires (NWs), we introduced a metal-assisted chemical etching (MCE)-based method employing a rapid thermal annealing (RTA) and vacuum deposition processes. A deposited two dimensional ultra-thin Ag layer on silicon as a substrate turns into zero dimensional self-organized nanoparticles (NPs) through RTA process. And these NPs act as catalyst and make nanoholes onto a Si substrate under the first MCE process. After sputtering porous Ag and Au layer on caved Si substrate, the second MCE process is conducted. Finally, one dimensional Si NWs with cylindrical structure are synthesized and their diameters are coincident to those of Ag and Au NPs because the region of Si covered with porous Ag and Au layer is vertically etched and the non-covered, nanoholes, remain. By changing the thickness of ultra-thin Ag film on Si substrate, the diameter of Si NWs formed after second MCE could be controlled.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
PublisherNano Science and Technology Institute
Pages509-512
Number of pages4
ISBN (Print)9781482258264
Publication statusPublished - 2014 Jan 1
EventNanotechnology 2014: Graphene, CNTs, Particles, Films and Composites - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 - Washington, DC, United States
Duration: 2014 Jun 152014 Jun 18

Publication series

NameTechnical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
Volume1

Other

OtherNanotechnology 2014: Graphene, CNTs, Particles, Films and Composites - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
CountryUnited States
CityWashington, DC
Period14/6/1514/6/18

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All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Lee, S. H., Hwang, S. H., Lee, T. I., & Myoung, J. M. (2014). Converting dimensions: A facile and high-yield route for getting sub-100 nm silicon nanowires. In Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 (pp. 509-512). (Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014; Vol. 1). Nano Science and Technology Institute.