TY - GEN
T1 - Converting dimensions
T2 - Nanotechnology 2014: Graphene, CNTs, Particles, Films and Composites - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
AU - Lee, Sang Hoon
AU - Hwang, Sung Hwan
AU - Lee, Tae Il
AU - Myoung, Jae Min
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2014
Y1 - 2014
N2 - To get circular and regular sub-100 nm Si nanowires (NWs), we introduced a metal-assisted chemical etching (MCE)-based method employing a rapid thermal annealing (RTA) and vacuum deposition processes. A deposited two dimensional ultra-thin Ag layer on silicon as a substrate turns into zero dimensional self-organized nanoparticles (NPs) through RTA process. And these NPs act as catalyst and make nanoholes onto a Si substrate under the first MCE process. After sputtering porous Ag and Au layer on caved Si substrate, the second MCE process is conducted. Finally, one dimensional Si NWs with cylindrical structure are synthesized and their diameters are coincident to those of Ag and Au NPs because the region of Si covered with porous Ag and Au layer is vertically etched and the non-covered, nanoholes, remain. By changing the thickness of ultra-thin Ag film on Si substrate, the diameter of Si NWs formed after second MCE could be controlled.
AB - To get circular and regular sub-100 nm Si nanowires (NWs), we introduced a metal-assisted chemical etching (MCE)-based method employing a rapid thermal annealing (RTA) and vacuum deposition processes. A deposited two dimensional ultra-thin Ag layer on silicon as a substrate turns into zero dimensional self-organized nanoparticles (NPs) through RTA process. And these NPs act as catalyst and make nanoholes onto a Si substrate under the first MCE process. After sputtering porous Ag and Au layer on caved Si substrate, the second MCE process is conducted. Finally, one dimensional Si NWs with cylindrical structure are synthesized and their diameters are coincident to those of Ag and Au NPs because the region of Si covered with porous Ag and Au layer is vertically etched and the non-covered, nanoholes, remain. By changing the thickness of ultra-thin Ag film on Si substrate, the diameter of Si NWs formed after second MCE could be controlled.
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M3 - Conference contribution
AN - SCOPUS:84907384445
SN - 9781482258264
T3 - Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
SP - 509
EP - 512
BT - Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
PB - Nano Science and Technology Institute
Y2 - 15 June 2014 through 18 June 2014
ER -