Core-level photoemission study of additional in adsorption on the Si(111)√3x√3-in surface

S. W. Cho, K. Nakamura, H. Koh, W. H. Choi, C. N. Whang, H. W. Yeom

Research output: Contribution to journalArticle

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Abstract

Additional In adsorption onto the Si(111)√3x√3-In surface at room temperature has been known to induce spontaneous structural transformations into a 2 X 2 and a √7 X √3 phase, which accompany a drastic change of the surface electric property. These structural transformations have been studied by low-energy-electron diffraction and core-level photoemission spectroscopy using synchrotron radiation. The transformation from √3 X√3 to 2 x 2 is characterized by the appearance of an extra In 4d component shifted by -0.41 eV in binding energy. The 2 X 2 phase fully develops at the In coverage of ∼0.8 monolayer (ML), which has two different In sites as indicated by the In 4d spectra. This and the Si 2p core-level data deny the present structural models of the 2 X 2 phase. The In 4d line shape of the √7 X √3 phase formed above ∼ 1.2 ML exhibits a strong asymmetry, indicating a metallic character of this surface in clear contrast to √7 X √3 and 2 2 phases. A unique Si 2p surface component, which represents the topmost Si layer, is identified for the √7 X √3 phase with a surface core-level shift of - 0.20 eV. These results are generally consistent with the √7 X √3 structure model consisting of one planar In overlayer on top of a bulk-terminated Si(111). Accompanying the structural transformations, a drastic lowering of the surface Fermi-level position is observed until the In coverage increases up to ∼ 1.0 ML.

Original languageEnglish
Article number035414
Pages (from-to)354141-354146
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number3
Publication statusPublished - 2003 Jan 15

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Core levels
Photoemission
photoelectric emission
Adsorption
adsorption
Monolayers
Low energy electron diffraction
Photoelectron spectroscopy
Model structures
Synchrotron radiation
Fermi level
Binding energy
Fermi surfaces
line shape
synchrotron radiation
Electric properties
electron diffraction
binding energy
asymmetry
shift

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Cho, S. W., Nakamura, K., Koh, H., Choi, W. H., Whang, C. N., & Yeom, H. W. (2003). Core-level photoemission study of additional in adsorption on the Si(111)√3x√3-in surface. Physical Review B - Condensed Matter and Materials Physics, 67(3), 354141-354146. [035414].
Cho, S. W. ; Nakamura, K. ; Koh, H. ; Choi, W. H. ; Whang, C. N. ; Yeom, H. W. / Core-level photoemission study of additional in adsorption on the Si(111)√3x√3-in surface. In: Physical Review B - Condensed Matter and Materials Physics. 2003 ; Vol. 67, No. 3. pp. 354141-354146.
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Cho, SW, Nakamura, K, Koh, H, Choi, WH, Whang, CN & Yeom, HW 2003, 'Core-level photoemission study of additional in adsorption on the Si(111)√3x√3-in surface', Physical Review B - Condensed Matter and Materials Physics, vol. 67, no. 3, 035414, pp. 354141-354146.

Core-level photoemission study of additional in adsorption on the Si(111)√3x√3-in surface. / Cho, S. W.; Nakamura, K.; Koh, H.; Choi, W. H.; Whang, C. N.; Yeom, H. W.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 67, No. 3, 035414, 15.01.2003, p. 354141-354146.

Research output: Contribution to journalArticle

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T1 - Core-level photoemission study of additional in adsorption on the Si(111)√3x√3-in surface

AU - Cho, S. W.

AU - Nakamura, K.

AU - Koh, H.

AU - Choi, W. H.

AU - Whang, C. N.

AU - Yeom, H. W.

PY - 2003/1/15

Y1 - 2003/1/15

N2 - Additional In adsorption onto the Si(111)√3x√3-In surface at room temperature has been known to induce spontaneous structural transformations into a 2 X 2 and a √7 X √3 phase, which accompany a drastic change of the surface electric property. These structural transformations have been studied by low-energy-electron diffraction and core-level photoemission spectroscopy using synchrotron radiation. The transformation from √3 X√3 to 2 x 2 is characterized by the appearance of an extra In 4d component shifted by -0.41 eV in binding energy. The 2 X 2 phase fully develops at the In coverage of ∼0.8 monolayer (ML), which has two different In sites as indicated by the In 4d spectra. This and the Si 2p core-level data deny the present structural models of the 2 X 2 phase. The In 4d line shape of the √7 X √3 phase formed above ∼ 1.2 ML exhibits a strong asymmetry, indicating a metallic character of this surface in clear contrast to √7 X √3 and 2 2 phases. A unique Si 2p surface component, which represents the topmost Si layer, is identified for the √7 X √3 phase with a surface core-level shift of - 0.20 eV. These results are generally consistent with the √7 X √3 structure model consisting of one planar In overlayer on top of a bulk-terminated Si(111). Accompanying the structural transformations, a drastic lowering of the surface Fermi-level position is observed until the In coverage increases up to ∼ 1.0 ML.

AB - Additional In adsorption onto the Si(111)√3x√3-In surface at room temperature has been known to induce spontaneous structural transformations into a 2 X 2 and a √7 X √3 phase, which accompany a drastic change of the surface electric property. These structural transformations have been studied by low-energy-electron diffraction and core-level photoemission spectroscopy using synchrotron radiation. The transformation from √3 X√3 to 2 x 2 is characterized by the appearance of an extra In 4d component shifted by -0.41 eV in binding energy. The 2 X 2 phase fully develops at the In coverage of ∼0.8 monolayer (ML), which has two different In sites as indicated by the In 4d spectra. This and the Si 2p core-level data deny the present structural models of the 2 X 2 phase. The In 4d line shape of the √7 X √3 phase formed above ∼ 1.2 ML exhibits a strong asymmetry, indicating a metallic character of this surface in clear contrast to √7 X √3 and 2 2 phases. A unique Si 2p surface component, which represents the topmost Si layer, is identified for the √7 X √3 phase with a surface core-level shift of - 0.20 eV. These results are generally consistent with the √7 X √3 structure model consisting of one planar In overlayer on top of a bulk-terminated Si(111). Accompanying the structural transformations, a drastic lowering of the surface Fermi-level position is observed until the In coverage increases up to ∼ 1.0 ML.

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