Core-level photoemission study of additional In adsorption on the Si(111)(formula presented)×(formula presented)-In surface

C. N. Whang, Sangwan Cho, H. W. Yeom, W. H. Choi, H. Koh, K. Nakamura

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Additional In adsorption onto the (formula presented) surface at room temperature has been known to induce spontaneous structural transformations into a (formula presented) and a (formula presented) phase, which accompany a drastic change of the surface electric property. These structural transformations have been studied by low-energy-electron diffraction and core-level photoemission spectroscopy using synchrotron radiation. The transformation from (formula presented) to (formula presented) is characterized by the appearance of an extra In (formula presented) component shifted by -0.41 eV in binding energy. The (formula presented) phase fully develops at the In coverage of ∼0.8 monolayer (ML), which has two different In sites as indicated by the In (formula presented) spectra. This and the Si (formula presented) core-level data deny the present structural models of the (formula presented) phase. The In (formula presented) line shape of the (formula presented) phase formed above ∼1.2 ML exhibits a strong asymmetry, indicating a metallic character of this surface in clear contrast to (formula presented) and 2 2 phases. A unique Si (formula presented) surface component, which represents the topmost Si layer, is identified for the (formula presented) phase with a surface core-level shift of -0.20 eV. These results are generally consistent with the (formula presented) structure model consisting of one planar In overlayer on top of a bulk-terminated Si(111). Accompanying the structural transformations, a drastic lowering of the surface Fermi-level position is observed until the In coverage increases up to ∼1.0 ML.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number3
DOIs
Publication statusPublished - 2003 Jan 1

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Core levels
Photoemission
photoelectric emission
Adsorption
adsorption
Monolayers
Low energy electron diffraction
Photoelectron spectroscopy
Model structures
Synchrotron radiation
Fermi level
Binding energy
Electric properties
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

@article{cb1fd127bd22417795619a85edef7633,
title = "Core-level photoemission study of additional In adsorption on the Si(111)(formula presented)×(formula presented)-In surface",
abstract = "Additional In adsorption onto the (formula presented) surface at room temperature has been known to induce spontaneous structural transformations into a (formula presented) and a (formula presented) phase, which accompany a drastic change of the surface electric property. These structural transformations have been studied by low-energy-electron diffraction and core-level photoemission spectroscopy using synchrotron radiation. The transformation from (formula presented) to (formula presented) is characterized by the appearance of an extra In (formula presented) component shifted by -0.41 eV in binding energy. The (formula presented) phase fully develops at the In coverage of ∼0.8 monolayer (ML), which has two different In sites as indicated by the In (formula presented) spectra. This and the Si (formula presented) core-level data deny the present structural models of the (formula presented) phase. The In (formula presented) line shape of the (formula presented) phase formed above ∼1.2 ML exhibits a strong asymmetry, indicating a metallic character of this surface in clear contrast to (formula presented) and 2 2 phases. A unique Si (formula presented) surface component, which represents the topmost Si layer, is identified for the (formula presented) phase with a surface core-level shift of -0.20 eV. These results are generally consistent with the (formula presented) structure model consisting of one planar In overlayer on top of a bulk-terminated Si(111). Accompanying the structural transformations, a drastic lowering of the surface Fermi-level position is observed until the In coverage increases up to ∼1.0 ML.",
author = "Whang, {C. N.} and Sangwan Cho and Yeom, {H. W.} and Choi, {W. H.} and H. Koh and K. Nakamura",
year = "2003",
month = "1",
day = "1",
doi = "10.1103/PhysRevB.67.035414",
language = "English",
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journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
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}

Core-level photoemission study of additional In adsorption on the Si(111)(formula presented)×(formula presented)-In surface. / Whang, C. N.; Cho, Sangwan; Yeom, H. W.; Choi, W. H.; Koh, H.; Nakamura, K.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 67, No. 3, 01.01.2003.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Core-level photoemission study of additional In adsorption on the Si(111)(formula presented)×(formula presented)-In surface

AU - Whang, C. N.

AU - Cho, Sangwan

AU - Yeom, H. W.

AU - Choi, W. H.

AU - Koh, H.

AU - Nakamura, K.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - Additional In adsorption onto the (formula presented) surface at room temperature has been known to induce spontaneous structural transformations into a (formula presented) and a (formula presented) phase, which accompany a drastic change of the surface electric property. These structural transformations have been studied by low-energy-electron diffraction and core-level photoemission spectroscopy using synchrotron radiation. The transformation from (formula presented) to (formula presented) is characterized by the appearance of an extra In (formula presented) component shifted by -0.41 eV in binding energy. The (formula presented) phase fully develops at the In coverage of ∼0.8 monolayer (ML), which has two different In sites as indicated by the In (formula presented) spectra. This and the Si (formula presented) core-level data deny the present structural models of the (formula presented) phase. The In (formula presented) line shape of the (formula presented) phase formed above ∼1.2 ML exhibits a strong asymmetry, indicating a metallic character of this surface in clear contrast to (formula presented) and 2 2 phases. A unique Si (formula presented) surface component, which represents the topmost Si layer, is identified for the (formula presented) phase with a surface core-level shift of -0.20 eV. These results are generally consistent with the (formula presented) structure model consisting of one planar In overlayer on top of a bulk-terminated Si(111). Accompanying the structural transformations, a drastic lowering of the surface Fermi-level position is observed until the In coverage increases up to ∼1.0 ML.

AB - Additional In adsorption onto the (formula presented) surface at room temperature has been known to induce spontaneous structural transformations into a (formula presented) and a (formula presented) phase, which accompany a drastic change of the surface electric property. These structural transformations have been studied by low-energy-electron diffraction and core-level photoemission spectroscopy using synchrotron radiation. The transformation from (formula presented) to (formula presented) is characterized by the appearance of an extra In (formula presented) component shifted by -0.41 eV in binding energy. The (formula presented) phase fully develops at the In coverage of ∼0.8 monolayer (ML), which has two different In sites as indicated by the In (formula presented) spectra. This and the Si (formula presented) core-level data deny the present structural models of the (formula presented) phase. The In (formula presented) line shape of the (formula presented) phase formed above ∼1.2 ML exhibits a strong asymmetry, indicating a metallic character of this surface in clear contrast to (formula presented) and 2 2 phases. A unique Si (formula presented) surface component, which represents the topmost Si layer, is identified for the (formula presented) phase with a surface core-level shift of -0.20 eV. These results are generally consistent with the (formula presented) structure model consisting of one planar In overlayer on top of a bulk-terminated Si(111). Accompanying the structural transformations, a drastic lowering of the surface Fermi-level position is observed until the In coverage increases up to ∼1.0 ML.

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JF - Physical Review B-Condensed Matter

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