Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature(Journal of Materials Chemistry C (2018) 6 (6187–6193) DOI: 10.1039/C8TC01762J)

Hyukjoon Yoo, Young Jun Tak, Won Gi Kim, Yeong gyu Kim, Hyun Jae Kim

Research output: Contribution to journalComment/debatepeer-review

Abstract

There were errors in the details shown for ref. 2, 6 and 9 cited in this article. The corrected references are shown below as ref. 1–3, respectively. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

Original languageEnglish
Pages (from-to)10376
Number of pages1
JournalJournal of Materials Chemistry C
Volume6
Issue number38
DOIs
Publication statusPublished - 2018

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry.

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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