Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature(Journal of Materials Chemistry C (2018) 6 (6187–6193) DOI: 10.1039/C8TC01762J)

Hyukjoon Yoo; Young Jun Tak; Won Gi Kim; Yeong gyu Kim; Hyun Jae Kim

doi:10.1039/C8TC90192A

Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature(Journal of Materials Chemistry C (2018) 6 (6187–6193) DOI: 10.1039/C8TC01762J)

Hyukjoon Yoo, Young Jun Tak, Won Gi Kim, Yeong gyu Kim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

There were errors in the details shown for ref. 2, 6 and 9 cited in this article. The corrected references are shown below as ref. 1–3, respectively. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

Original language	English
Pages (from-to)	10376
Number of pages	1
Journal	Journal of Materials Chemistry C
Volume	6
Issue number	38
DOIs	https://doi.org/10.1039/C8TC90192A
Publication status	Published - 2018

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Publisher Copyright:
© The Royal Society of Chemistry.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Chemistry

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Yoo, H., Tak, Y. J., Kim, W. G., Kim, Y. G., & Kim, H. J. (2018). Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature(Journal of Materials Chemistry C (2018) 6 (6187–6193) DOI: 10.1039/C8TC01762J). Journal of Materials Chemistry C, 6(38), 10376. https://doi.org/10.1039/C8TC90192A

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title = "Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature(Journal of Materials Chemistry C (2018) 6 (6187–6193) DOI: 10.1039/C8TC01762J)",

abstract = "There were errors in the details shown for ref. 2, 6 and 9 cited in this article. The corrected references are shown below as ref. 1–3, respectively. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.",

author = "Hyukjoon Yoo and Tak, {Young Jun} and Kim, {Won Gi} and Kim, {Yeong gyu} and Kim, {Hyun Jae}",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

year = "2018",

doi = "10.1039/C8TC90192A",

language = "English",

volume = "6",

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journal = "Journal of Materials Chemistry C",

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Yoo, H, Tak, YJ, Kim, WG, Kim, YG & Kim, HJ 2018, 'Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature(Journal of Materials Chemistry C (2018) 6 (6187–6193) DOI: 10.1039/C8TC01762J)', Journal of Materials Chemistry C, vol. 6, no. 38, pp. 10376. https://doi.org/10.1039/C8TC90192A

Correction : A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature(Journal of Materials Chemistry C (2018) 6 (6187–6193) DOI: 10.1039/C8TC01762J). / Yoo, Hyukjoon; Tak, Young Jun; Kim, Won Gi et al.

In: Journal of Materials Chemistry C, Vol. 6, No. 38, 2018, p. 10376.

Research output: Contribution to journal › Comment/debate › peer-review

TY - JOUR

T1 - Correction

T2 - A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature(Journal of Materials Chemistry C (2018) 6 (6187–6193) DOI: 10.1039/C8TC01762J)

AU - Yoo, Hyukjoon

AU - Tak, Young Jun

AU - Kim, Won Gi

AU - Kim, Yeong gyu

AU - Kim, Hyun Jae

PY - 2018

Y1 - 2018

N2 - There were errors in the details shown for ref. 2, 6 and 9 cited in this article. The corrected references are shown below as ref. 1–3, respectively. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

AB - There were errors in the details shown for ref. 2, 6 and 9 cited in this article. The corrected references are shown below as ref. 1–3, respectively. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

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U2 - 10.1039/C8TC90192A

DO - 10.1039/C8TC90192A

M3 - Comment/debate

AN - SCOPUS:85054536439

SN - 2050-7526

VL - 6

SP - 10376

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 38

ER -

Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature(Journal of Materials Chemistry C (2018) 6 (6187–6193) DOI: 10.1039/C8TC01762J)

Abstract

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