Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature(Journal of Materials Chemistry C (2018) 6 (6187–6193) DOI: 10.1039/C8TC01762J)

Hyukjoon Yoo, Young Jun Tak, Won Gi Kim, Yeong gyu Kim, Hyun Jae Kim

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