TY - JOUR
T1 - Correction
T2 - Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide Hard Mask Lift-Off (Electronic Materials Letters, (2023), 19, 2, (192-199), 10.1007/s13391-022-00386-0)
AU - Ning, Ruiguang
AU - Jung, Soo Young
AU - Choi, Haneul
AU - Lee, Byeong hyeon
AU - Kim, Min Seok
AU - Choi, Hyung Jin
AU - Lee, Jun Young
AU - Park, Jin Soo
AU - Jung, Sung Jin
AU - Jang, Ho Won
AU - Won, Sung Ok
AU - Chang, Hye Jung
AU - Jang, Ji Soo
AU - Lee, Kyu Hyoung
AU - Lee, Byung Chul
AU - Baek, Seung Hyub
N1 - Publisher Copyright:
© 2022 The Author(s) under exclusive licence to The Korean Institute of Metals and Materials.
PY - 2023/3
Y1 - 2023/3
N2 - In the original publication of the article the following references were missing and the missed references are given int his correction Cho, J.-H., Boampong, A.A., Kim, M.-H.: Selective etching of dielectric buffer layer for organic ferroelectric memory cell. Electron. Mater. Lett. 17, 406–413 (2021) Zhang, X., Yang, C., Zhang, Y., Hu, A., Li, M., Gao, L., Ling, H., Hang, T.: Sub-surface damage of ultra-thin monocrystalline silicon wafer induced by dry polishing. Electron. Mater. Lett. 16, 355–362 (2020) Kim, T.M., Sim, H.S., Jeon, J.W.: Development of a vaporizerfor gradual vaporization control of precursor materials in the CVD process. Electron. Mater. Lett. 17, 250–259(2021)Byun, D.-W., Lee, Y.-J., Oh, J.-M., Schweitz, M.A.,Koo, S.-M.: Morphological and electrical properties ofβ-Ga2O3/4H-SiC heterojunction diodes. Electron. Mater. Lett. 17, 479–484 (2021)The original article has been corrected.
AB - In the original publication of the article the following references were missing and the missed references are given int his correction Cho, J.-H., Boampong, A.A., Kim, M.-H.: Selective etching of dielectric buffer layer for organic ferroelectric memory cell. Electron. Mater. Lett. 17, 406–413 (2021) Zhang, X., Yang, C., Zhang, Y., Hu, A., Li, M., Gao, L., Ling, H., Hang, T.: Sub-surface damage of ultra-thin monocrystalline silicon wafer induced by dry polishing. Electron. Mater. Lett. 16, 355–362 (2020) Kim, T.M., Sim, H.S., Jeon, J.W.: Development of a vaporizerfor gradual vaporization control of precursor materials in the CVD process. Electron. Mater. Lett. 17, 250–259(2021)Byun, D.-W., Lee, Y.-J., Oh, J.-M., Schweitz, M.A.,Koo, S.-M.: Morphological and electrical properties ofβ-Ga2O3/4H-SiC heterojunction diodes. Electron. Mater. Lett. 17, 479–484 (2021)The original article has been corrected.
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U2 - 10.1007/s13391-022-00395-z
DO - 10.1007/s13391-022-00395-z
M3 - Comment/debate
AN - SCOPUS:85145098746
SN - 1738-8090
VL - 19
SP - 200
JO - Electronic Materials Letters
JF - Electronic Materials Letters
IS - 2
ER -