Correction to: Enhanced Charge Injection Properties of Organic Field-Effect Transistor by Molecular Implantation Doping (Advanced Materials, (2019), 31, 10, (1806697), 10.1002/adma.201806697)

Youngrok Kim, Seungjun Chung, Kyungjune Cho, David Harkin, Wang Taek Hwang, Daekyoung Yoo, Jae Keun Kim, Woocheol Lee, Younggul Song, Heebeom Ahn, Yongtaek Hong, Henning Sirringhaus, Keehoon Kang, Takhee Lee

Research output: Contribution to journalComment/debatepeer-review

Abstract

The legends and captions for Figure S8b,c in the Supporting Information of the originally published article were found to be switched with each other. The corrected Figure S8 is shown below. 8 Figure (Figure presented.) a–c) The time evolution of transfer curves for the doped/unetched PBTTT transistor with channel length Lch, of 50 µm (a); the doped/unetched PBTTT transistor with Lch = 100 µm (b), the doped contact (doped/etched) PBTTT transistor with Lch = 50 µm (c), and the doped contact PBTTT transistor with Lch = 100 µm (d) over two months.

Original languageEnglish
Article number2003126
JournalAdvanced Materials
Volume32
Issue number38
DOIs
Publication statusPublished - 2020 Sep 1

Bibliographical note

Publisher Copyright:
© 2020 Wiley-VCH GmbH

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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