Correlation between crystallinity, charge transport, and electrical stability in an ambipolar polymer field-effect transistor based on poly(naphthalene- alt -diketopyrrolopyrrole)

Beom Joon Kim, Hyo Sang Lee, Joong Seok Lee, Sanghyeok Cho, Hyunjung Kim, Hae Jung Son, Honggon Kim, Min Jae Ko, Sungnam Park, Moon Sung Kang, Se Young Oh, Bongsoo Kim, Jeong Ho Cho

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We characterized the electrical properties of ambipolar polymer field-effect transistors (PFETs) based on the low-band-gap polymer, pNAPDO-DPP-EH. The polymer consisted of electron-rich 2,6-di(thienyl)naphthalene units with decyloxy chains (NAPDO) and electron-deficient diketopyrrolopyrrole units with 2-ethylhexyl chains (DPP-EH). The as-spun pNAPDO-DPP-EH PFET device exhibited ambipolar transport properties with a hole mobility of 3.64 × 10-3 cm2/(V s) and an electron mobility of 0.37 × 10-3 cm2/(V s). Thermal annealing of the polymer film resulted in a dramatic increase in the carrier mobility. Annealing at 200 C yielded hole and electron mobilities of 0.078 and 0.002 cm2/(V s), respectively. The mechanism by which the mobility had improved was investigated via grazing incidence X-ray diffraction studies, atomic force microscopy, and temperature-dependent transport measurements. These results indicated that thermal annealing improved the polymer film crystallinity and promoted the formation of a longer-range lamellar structure that lowered the thermal activation energy for charge hopping. Thermal annealing, moreover, reduced charge trapping in the films and thus improved the electrical stability of the PFET device. This work underscores the fact that long-range ordering in a crystalline polymer is of great importance for efficient charge transport and high electrical stability.

Original languageEnglish
Pages (from-to)11479-11486
Number of pages8
JournalJournal of Physical Chemistry C
Volume117
Issue number22
DOIs
Publication statusPublished - 2013 Jul 1

Fingerprint

Naphthalene
Field effect transistors
naphthalene
Charge transfer
crystallinity
Polymers
field effect transistors
polymers
Annealing
Hole mobility
Electron mobility
Polymer films
annealing
hole mobility
electron mobility
Electron transport properties
Charge trapping
Lamellar structures
Electrons
Carrier mobility

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

Kim, Beom Joon ; Lee, Hyo Sang ; Lee, Joong Seok ; Cho, Sanghyeok ; Kim, Hyunjung ; Son, Hae Jung ; Kim, Honggon ; Ko, Min Jae ; Park, Sungnam ; Kang, Moon Sung ; Oh, Se Young ; Kim, Bongsoo ; Cho, Jeong Ho. / Correlation between crystallinity, charge transport, and electrical stability in an ambipolar polymer field-effect transistor based on poly(naphthalene- alt -diketopyrrolopyrrole). In: Journal of Physical Chemistry C. 2013 ; Vol. 117, No. 22. pp. 11479-11486.
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abstract = "We characterized the electrical properties of ambipolar polymer field-effect transistors (PFETs) based on the low-band-gap polymer, pNAPDO-DPP-EH. The polymer consisted of electron-rich 2,6-di(thienyl)naphthalene units with decyloxy chains (NAPDO) and electron-deficient diketopyrrolopyrrole units with 2-ethylhexyl chains (DPP-EH). The as-spun pNAPDO-DPP-EH PFET device exhibited ambipolar transport properties with a hole mobility of 3.64 × 10-3 cm2/(V s) and an electron mobility of 0.37 × 10-3 cm2/(V s). Thermal annealing of the polymer film resulted in a dramatic increase in the carrier mobility. Annealing at 200 C yielded hole and electron mobilities of 0.078 and 0.002 cm2/(V s), respectively. The mechanism by which the mobility had improved was investigated via grazing incidence X-ray diffraction studies, atomic force microscopy, and temperature-dependent transport measurements. These results indicated that thermal annealing improved the polymer film crystallinity and promoted the formation of a longer-range lamellar structure that lowered the thermal activation energy for charge hopping. Thermal annealing, moreover, reduced charge trapping in the films and thus improved the electrical stability of the PFET device. This work underscores the fact that long-range ordering in a crystalline polymer is of great importance for efficient charge transport and high electrical stability.",
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Correlation between crystallinity, charge transport, and electrical stability in an ambipolar polymer field-effect transistor based on poly(naphthalene- alt -diketopyrrolopyrrole). / Kim, Beom Joon; Lee, Hyo Sang; Lee, Joong Seok; Cho, Sanghyeok; Kim, Hyunjung; Son, Hae Jung; Kim, Honggon; Ko, Min Jae; Park, Sungnam; Kang, Moon Sung; Oh, Se Young; Kim, Bongsoo; Cho, Jeong Ho.

In: Journal of Physical Chemistry C, Vol. 117, No. 22, 01.07.2013, p. 11479-11486.

Research output: Contribution to journalArticle

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T1 - Correlation between crystallinity, charge transport, and electrical stability in an ambipolar polymer field-effect transistor based on poly(naphthalene- alt -diketopyrrolopyrrole)

AU - Kim, Beom Joon

AU - Lee, Hyo Sang

AU - Lee, Joong Seok

AU - Cho, Sanghyeok

AU - Kim, Hyunjung

AU - Son, Hae Jung

AU - Kim, Honggon

AU - Ko, Min Jae

AU - Park, Sungnam

AU - Kang, Moon Sung

AU - Oh, Se Young

AU - Kim, Bongsoo

AU - Cho, Jeong Ho

PY - 2013/7/1

Y1 - 2013/7/1

N2 - We characterized the electrical properties of ambipolar polymer field-effect transistors (PFETs) based on the low-band-gap polymer, pNAPDO-DPP-EH. The polymer consisted of electron-rich 2,6-di(thienyl)naphthalene units with decyloxy chains (NAPDO) and electron-deficient diketopyrrolopyrrole units with 2-ethylhexyl chains (DPP-EH). The as-spun pNAPDO-DPP-EH PFET device exhibited ambipolar transport properties with a hole mobility of 3.64 × 10-3 cm2/(V s) and an electron mobility of 0.37 × 10-3 cm2/(V s). Thermal annealing of the polymer film resulted in a dramatic increase in the carrier mobility. Annealing at 200 C yielded hole and electron mobilities of 0.078 and 0.002 cm2/(V s), respectively. The mechanism by which the mobility had improved was investigated via grazing incidence X-ray diffraction studies, atomic force microscopy, and temperature-dependent transport measurements. These results indicated that thermal annealing improved the polymer film crystallinity and promoted the formation of a longer-range lamellar structure that lowered the thermal activation energy for charge hopping. Thermal annealing, moreover, reduced charge trapping in the films and thus improved the electrical stability of the PFET device. This work underscores the fact that long-range ordering in a crystalline polymer is of great importance for efficient charge transport and high electrical stability.

AB - We characterized the electrical properties of ambipolar polymer field-effect transistors (PFETs) based on the low-band-gap polymer, pNAPDO-DPP-EH. The polymer consisted of electron-rich 2,6-di(thienyl)naphthalene units with decyloxy chains (NAPDO) and electron-deficient diketopyrrolopyrrole units with 2-ethylhexyl chains (DPP-EH). The as-spun pNAPDO-DPP-EH PFET device exhibited ambipolar transport properties with a hole mobility of 3.64 × 10-3 cm2/(V s) and an electron mobility of 0.37 × 10-3 cm2/(V s). Thermal annealing of the polymer film resulted in a dramatic increase in the carrier mobility. Annealing at 200 C yielded hole and electron mobilities of 0.078 and 0.002 cm2/(V s), respectively. The mechanism by which the mobility had improved was investigated via grazing incidence X-ray diffraction studies, atomic force microscopy, and temperature-dependent transport measurements. These results indicated that thermal annealing improved the polymer film crystallinity and promoted the formation of a longer-range lamellar structure that lowered the thermal activation energy for charge hopping. Thermal annealing, moreover, reduced charge trapping in the films and thus improved the electrical stability of the PFET device. This work underscores the fact that long-range ordering in a crystalline polymer is of great importance for efficient charge transport and high electrical stability.

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