The growth and structural evolution of the carbon nitride (CN x ) film, deposited by rf magnetron sputtering in Ar/N 2 discharge, were studied. The CN x (0.23≤x≤0.71) films were deposited on Si(1 0 0) at rf power between 50 and 250W. Simultaneously, Ar/N 2 gas ratio was varied from 0 to 18 with total pressure kept at 6.6 × 10 -1 Pa. The composition, structure, and chemical bonding configuration of the CN x films were found to be strongly dependent on deposition parameters (rf power and Ar/N 2 gas ratio). Based on these results, a relationship between deposition parameter and film properties ([N]/[C] ratio, surface roughness, and sp 3 /sp 2 bond ratio) was established.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films