Correlation between surface morphology and electrical properties of VO                         2                          films grown by direct thermal oxidation method

Joonseok Yoon; Changwoo Park; Sungkyun Park; Bongjin Simon Mun; Honglyoul Ju

doi:10.1016/j.apsusc.2015.07.036

Correlation between surface morphology and electrical properties of VO ₂ films grown by direct thermal oxidation method

Joonseok Yoon, Changwoo Park, Sungkyun Park, Bongjin Simon Mun, Honglyoul Ju

Department of Physics

Research output: Contribution to journal › Article

19 Citations (Scopus)

Abstract

We investigate surface morphology and electrical properties of VO ₂ films fabricated by direct thermal oxidation method. The VO ₂ film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO ₂ characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 ⁴ , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO ₂ films reveals that the transport properties of VO ₂ films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.

Original language	English
Pages (from-to)	1082-1086
Number of pages	5
Journal	Applied Surface Science
Volume	353
DOIs	https://doi.org/10.1016/j.apsusc.2015.07.036
Publication status	Published - 2015 Oct 30

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2015.07.036

Fingerprint Dive into the research topics of 'Correlation between surface morphology and electrical properties of VO <sub>2</sub> films grown by direct thermal oxidation method'. Together they form a unique fingerprint.

Cite this

Yoon, J., Park, C., Park, S., Mun, B. S., & Ju, H. (2015). Correlation between surface morphology and electrical properties of VO ₂ films grown by direct thermal oxidation method Applied Surface Science, 353, 1082-1086. https://doi.org/10.1016/j.apsusc.2015.07.036

@article{11abe1deb755484bb08f01e8976dc0f4,

title = " Correlation between surface morphology and electrical properties of VO 2 films grown by direct thermal oxidation method ",

abstract = " We investigate surface morphology and electrical properties of VO 2 films fabricated by direct thermal oxidation method. The VO 2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO 2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 4 , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO 2 films reveals that the transport properties of VO 2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures. ",

author = "Joonseok Yoon and Changwoo Park and Sungkyun Park and Mun, {Bongjin Simon} and Honglyoul Ju",

year = "2015",

month = oct,

day = "30",

doi = "10.1016/j.apsusc.2015.07.036",

language = "English",

volume = "353",

pages = "1082--1086",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

Correlation between surface morphology and electrical properties of VO ₂ films grown by direct thermal oxidation method . / Yoon, Joonseok; Park, Changwoo; Park, Sungkyun; Mun, Bongjin Simon; Ju, Honglyoul.

In: Applied Surface Science, Vol. 353, 30.10.2015, p. 1082-1086.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Correlation between surface morphology and electrical properties of VO 2 films grown by direct thermal oxidation method

AU - Yoon, Joonseok

AU - Park, Changwoo

AU - Park, Sungkyun

AU - Mun, Bongjin Simon

AU - Ju, Honglyoul

PY - 2015/10/30

Y1 - 2015/10/30

N2 - We investigate surface morphology and electrical properties of VO 2 films fabricated by direct thermal oxidation method. The VO 2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO 2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 4 , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO 2 films reveals that the transport properties of VO 2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.

AB - We investigate surface morphology and electrical properties of VO 2 films fabricated by direct thermal oxidation method. The VO 2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO 2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 4 , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO 2 films reveals that the transport properties of VO 2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.

UR - http://www.scopus.com/inward/record.url?scp=84941985425&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84941985425&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2015.07.036

DO - 10.1016/j.apsusc.2015.07.036

M3 - Article

AN - SCOPUS:84941985425

VL - 353

SP - 1082

EP - 1086

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -