Correlation between surface morphology and electrical properties of VO                         
                        2
                                                  films grown by direct thermal oxidation method

Joonseok Yoon; Changwoo Park; Sungkyun Park; Bongjin Simon Mun; Honglyoul Ju

doi:10.1016/j.apsusc.2015.07.036

Correlation between surface morphology and electrical properties of VO ₂ films grown by direct thermal oxidation method

Joonseok Yoon, Changwoo Park, Sungkyun Park, Bongjin Simon Mun, Honglyoul Ju

Department of Physics

Research output: Contribution to journal › Article

17 Citations (Scopus)

Abstract

We investigate surface morphology and electrical properties of VO ₂ films fabricated by direct thermal oxidation method. The VO ₂ film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO ₂ characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 ⁴ , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO ₂ films reveals that the transport properties of VO ₂ films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.

Original language	English
Pages (from-to)	1082-1086
Number of pages	5
Journal	Applied Surface Science
Volume	353
DOIs	https://doi.org/10.1016/j.apsusc.2015.07.036
Publication status	Published - 2015 Oct 30

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All Science Journal Classification (ASJC) codes

Surfaces, Coatings and Films

Cite this

Yoon, J., Park, C., Park, S., Mun, B. S., & Ju, H. (2015). Correlation between surface morphology and electrical properties of VO ₂ films grown by direct thermal oxidation method Applied Surface Science, 353, 1082-1086. https://doi.org/10.1016/j.apsusc.2015.07.036

Yoon, Joonseok ; Park, Changwoo ; Park, Sungkyun ; Mun, Bongjin Simon ; Ju, Honglyoul. / Correlation between surface morphology and electrical properties of VO ₂ films grown by direct thermal oxidation method In: Applied Surface Science. 2015 ; Vol. 353. pp. 1082-1086.

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abstract = " We investigate surface morphology and electrical properties of VO 2 films fabricated by direct thermal oxidation method. The VO 2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO 2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 4 , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO 2 films reveals that the transport properties of VO 2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures. ",

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Yoon, J, Park, C, Park, S, Mun, BS & Ju, H 2015, ' Correlation between surface morphology and electrical properties of VO ₂ films grown by direct thermal oxidation method ', Applied Surface Science, vol. 353, pp. 1082-1086. https://doi.org/10.1016/j.apsusc.2015.07.036

Correlation between surface morphology and electrical properties of VO ₂ films grown by direct thermal oxidation method . / Yoon, Joonseok; Park, Changwoo; Park, Sungkyun; Mun, Bongjin Simon; Ju, Honglyoul.

In: Applied Surface Science, Vol. 353, 30.10.2015, p. 1082-1086.

Research output: Contribution to journal › Article

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AB - We investigate surface morphology and electrical properties of VO 2 films fabricated by direct thermal oxidation method. The VO 2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO 2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 4 , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO 2 films reveals that the transport properties of VO 2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.

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Yoon J, Park C, Park S, Mun BS, Ju H. Correlation between surface morphology and electrical properties of VO ₂ films grown by direct thermal oxidation method Applied Surface Science. 2015 Oct 30;353:1082-1086. https://doi.org/10.1016/j.apsusc.2015.07.036

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10.1016/j.apsusc.2015.07.036