Correlation between surface morphology and electrical properties of VO 2 films grown by direct thermal oxidation method

Joonseok Yoon, Changwoo Park, Sungkyun Park, Bongjin Simon Mun, Honglyoul Ju

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17 Citations (Scopus)

Abstract

We investigate surface morphology and electrical properties of VO 2 films fabricated by direct thermal oxidation method. The VO 2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO 2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 4 , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO 2 films reveals that the transport properties of VO 2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.

Original languageEnglish
Pages (from-to)1082-1086
Number of pages5
JournalApplied Surface Science
Volume353
DOIs
Publication statusPublished - 2015 Oct 30

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All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

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