Correlation between surface morphology and electrical properties of VO                         2                          films grown by direct thermal oxidation method

Joonseok Yoon; Changwoo Park; Sungkyun Park; Bongjin Simon Mun; Honglyoul Ju

doi:10.1016/j.apsusc.2015.07.036

Correlation between surface morphology and electrical properties of VO ₂ films grown by direct thermal oxidation method

Joonseok Yoon, Changwoo Park, Sungkyun Park, Bongjin Simon Mun, Honglyoul Ju

Department of Physics

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We investigate surface morphology and electrical properties of VO ₂ films fabricated by direct thermal oxidation method. The VO ₂ film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO ₂ characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 ⁴ , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO ₂ films reveals that the transport properties of VO ₂ films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.

Original language	English
Pages (from-to)	1082-1086
Number of pages	5
Journal	Applied Surface Science
Volume	353
DOIs	https://doi.org/10.1016/j.apsusc.2015.07.036
Publication status	Published - 2015 Oct 30

Bibliographical note

Funding Information:
H.L. Ju and B.S. Mun would like to thank the Basic Science Research Program for support through the National Research Foundation of Korea (NRF) funded by the Korean Government ( MOE ) ( Nos. 2012R1A1A2006948 and 2012R1A1A2001745 ). This paper was supported by GIST 2015 TBP Research Fund and Korea Basic Science Institute Research Grant (E35800).

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = " Correlation between surface morphology and electrical properties of VO 2 films grown by direct thermal oxidation method ",

abstract = " We investigate surface morphology and electrical properties of VO 2 films fabricated by direct thermal oxidation method. The VO 2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO 2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 4 , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO 2 films reveals that the transport properties of VO 2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures. ",

author = "Joonseok Yoon and Changwoo Park and Sungkyun Park and Mun, {Bongjin Simon} and Honglyoul Ju",

note = "Funding Information: H.L. Ju and B.S. Mun would like to thank the Basic Science Research Program for support through the National Research Foundation of Korea (NRF) funded by the Korean Government ( MOE ) ( Nos. 2012R1A1A2006948 and 2012R1A1A2001745 ). This paper was supported by GIST 2015 TBP Research Fund and Korea Basic Science Institute Research Grant (E35800).",

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Correlation between surface morphology and electrical properties of VO ₂ films grown by direct thermal oxidation method . / Yoon, Joonseok; Park, Changwoo; Park, Sungkyun; Mun, Bongjin Simon; Ju, Honglyoul.

In: Applied Surface Science, Vol. 353, 30.10.2015, p. 1082-1086.

Research output: Contribution to journal › Article › peer-review

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T1 - Correlation between surface morphology and electrical properties of VO 2 films grown by direct thermal oxidation method

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AU - Park, Changwoo

AU - Park, Sungkyun

AU - Mun, Bongjin Simon

AU - Ju, Honglyoul

N1 - Funding Information: H.L. Ju and B.S. Mun would like to thank the Basic Science Research Program for support through the National Research Foundation of Korea (NRF) funded by the Korean Government ( MOE ) ( Nos. 2012R1A1A2006948 and 2012R1A1A2001745 ). This paper was supported by GIST 2015 TBP Research Fund and Korea Basic Science Institute Research Grant (E35800).

PY - 2015/10/30

Y1 - 2015/10/30

N2 - We investigate surface morphology and electrical properties of VO 2 films fabricated by direct thermal oxidation method. The VO 2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO 2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 4 , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO 2 films reveals that the transport properties of VO 2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.

AB - We investigate surface morphology and electrical properties of VO 2 films fabricated by direct thermal oxidation method. The VO 2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO 2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 4 , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO 2 films reveals that the transport properties of VO 2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.

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