Abstract
We investigate surface morphology and electrical properties of VO 2 films fabricated by direct thermal oxidation method. The VO 2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO 2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 4 , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO 2 films reveals that the transport properties of VO 2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.
| Original language | English |
|---|---|
| Pages (from-to) | 1082-1086 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 353 |
| DOIs | |
| Publication status | Published - 2015 Oct 30 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
Cite this
}
Correlation between surface morphology and electrical properties of VO 2 films grown by direct thermal oxidation method . / Yoon, Joonseok; Park, Changwoo; Park, Sungkyun; Mun, Bongjin Simon; Ju, Honglyoul.
In: Applied Surface Science, Vol. 353, 30.10.2015, p. 1082-1086.Research output: Contribution to journal › Article
TY - JOUR
T1 - Correlation between surface morphology and electrical properties of VO 2 films grown by direct thermal oxidation method
AU - Yoon, Joonseok
AU - Park, Changwoo
AU - Park, Sungkyun
AU - Mun, Bongjin Simon
AU - Ju, Honglyoul
PY - 2015/10/30
Y1 - 2015/10/30
N2 - We investigate surface morphology and electrical properties of VO 2 films fabricated by direct thermal oxidation method. The VO 2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO 2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 4 , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO 2 films reveals that the transport properties of VO 2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.
AB - We investigate surface morphology and electrical properties of VO 2 films fabricated by direct thermal oxidation method. The VO 2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO 2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 4 , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO 2 films reveals that the transport properties of VO 2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.
UR - http://www.scopus.com/inward/record.url?scp=84941985425&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84941985425&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2015.07.036
DO - 10.1016/j.apsusc.2015.07.036
M3 - Article
AN - SCOPUS:84941985425
VL - 353
SP - 1082
EP - 1086
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -