Correlation between surface morphology and electrical properties of VO                         2                          films grown by direct thermal oxidation method

Joonseok Yoon; Changwoo Park; Sungkyun Park; Bongjin Simon Mun; Honglyoul Ju

doi:10.1016/j.apsusc.2015.07.036

Correlation between surface morphology and electrical properties of VO ₂ films grown by direct thermal oxidation method

Joonseok Yoon, Changwoo Park, Sungkyun Park, Bongjin Simon Mun, Honglyoul Ju

Department of Physics

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

We investigate surface morphology and electrical properties of VO ₂ films fabricated by direct thermal oxidation method. The VO ₂ film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO ₂ characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 ⁴ , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO ₂ films reveals that the transport properties of VO ₂ films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.

Original language	English
Pages (from-to)	1082-1086
Number of pages	5
Journal	Applied Surface Science
Volume	353
DOIs	https://doi.org/10.1016/j.apsusc.2015.07.036
Publication status	Published - 2015 Oct 30

Bibliographical note

Funding Information:
H.L. Ju and B.S. Mun would like to thank the Basic Science Research Program for support through the National Research Foundation of Korea (NRF) funded by the Korean Government ( MOE ) ( Nos. 2012R1A1A2006948 and 2012R1A1A2001745 ). This paper was supported by GIST 2015 TBP Research Fund and Korea Basic Science Institute Research Grant (E35800).

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2015.07.036

Cite this

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title = " Correlation between surface morphology and electrical properties of VO 2 films grown by direct thermal oxidation method ",

abstract = " We investigate surface morphology and electrical properties of VO 2 films fabricated by direct thermal oxidation method. The VO 2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO 2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 4 , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO 2 films reveals that the transport properties of VO 2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.",

author = "Joonseok Yoon and Changwoo Park and Sungkyun Park and Mun, {Bongjin Simon} and Honglyoul Ju",

note = "Funding Information: H.L. Ju and B.S. Mun would like to thank the Basic Science Research Program for support through the National Research Foundation of Korea (NRF) funded by the Korean Government ( MOE ) ( Nos. 2012R1A1A2006948 and 2012R1A1A2001745 ). This paper was supported by GIST 2015 TBP Research Fund and Korea Basic Science Institute Research Grant (E35800). Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

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doi = "10.1016/j.apsusc.2015.07.036",

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Correlation between surface morphology and electrical properties of VO ₂ films grown by direct thermal oxidation method . / Yoon, Joonseok; Park, Changwoo; Park, Sungkyun et al.

In: Applied Surface Science, Vol. 353, 30.10.2015, p. 1082-1086.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Correlation between surface morphology and electrical properties of VO 2 films grown by direct thermal oxidation method

AU - Yoon, Joonseok

AU - Park, Changwoo

AU - Park, Sungkyun

AU - Mun, Bongjin Simon

AU - Ju, Honglyoul

N1 - Funding Information: H.L. Ju and B.S. Mun would like to thank the Basic Science Research Program for support through the National Research Foundation of Korea (NRF) funded by the Korean Government ( MOE ) ( Nos. 2012R1A1A2006948 and 2012R1A1A2001745 ). This paper was supported by GIST 2015 TBP Research Fund and Korea Basic Science Institute Research Grant (E35800). Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

PY - 2015/10/30

Y1 - 2015/10/30

N2 - We investigate surface morphology and electrical properties of VO 2 films fabricated by direct thermal oxidation method. The VO 2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO 2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 4 , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO 2 films reveals that the transport properties of VO 2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.

AB - We investigate surface morphology and electrical properties of VO 2 films fabricated by direct thermal oxidation method. The VO 2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO 2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 4 , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO 2 films reveals that the transport properties of VO 2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.

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