Correlation between surface morphology and electrical properties of VO 2 films grown by direct thermal oxidation method

Joonseok Yoon, Changwoo Park, Sungkyun Park, Bongjin Simon Mun, Honglyoul Ju

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

We investigate surface morphology and electrical properties of VO 2 films fabricated by direct thermal oxidation method. The VO 2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO 2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 10 4 , and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO 2 films reveals that the transport properties of VO 2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.

Original languageEnglish
Pages (from-to)1082-1086
Number of pages5
JournalApplied Surface Science
Volume353
DOIs
Publication statusPublished - 2015 Oct 30

Bibliographical note

Funding Information:
H.L. Ju and B.S. Mun would like to thank the Basic Science Research Program for support through the National Research Foundation of Korea (NRF) funded by the Korean Government ( MOE ) ( Nos. 2012R1A1A2006948 and 2012R1A1A2001745 ). This paper was supported by GIST 2015 TBP Research Fund and Korea Basic Science Institute Research Grant (E35800).

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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