Abstract
We present the annealing effects on nanochemistry and electrical properties in Hf O2 dielectrics grown by metalorganic molecular-beam epitaxy. After the postannealing treatment of Hf O2 films in the temperature range of 600-800 °C, the thicknesses and chemical states of the films were examined by high-resolution transmission electron microscopy and angle-resolved x-ray photoelectron spectroscopy. By comparing the line shapes of core-level spectra for the samples with different annealing temperatures, the concentrations of SiO and Hf-silicate with high dielectric constant are found to be highest for Hf O2 film annealed at 700 °C. This result supports that the accumulation capacitance of the sample annealed at 700 °C is not deteriorated in spite of a steep increase in interfacial layer thickness compared with that of the sample annealed at 600 °C.
| Original language | English |
|---|---|
| Article number | 102903 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 86 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2005 Mar 7 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Correlation of nanochemistry and electrical properties in Hf O2 films grown by metalorganic molecular-beam epitaxy. / Moon, Tae Hyoung; Ham, Moon Ho; Myoung, Jae Min.
In: Applied Physics Letters, Vol. 86, No. 10, 102903, 07.03.2005, p. 1-3.Research output: Contribution to journal › Article
TY - JOUR
T1 - Correlation of nanochemistry and electrical properties in Hf O2 films grown by metalorganic molecular-beam epitaxy
AU - Moon, Tae Hyoung
AU - Ham, Moon Ho
AU - Myoung, Jae Min
PY - 2005/3/7
Y1 - 2005/3/7
N2 - We present the annealing effects on nanochemistry and electrical properties in Hf O2 dielectrics grown by metalorganic molecular-beam epitaxy. After the postannealing treatment of Hf O2 films in the temperature range of 600-800 °C, the thicknesses and chemical states of the films were examined by high-resolution transmission electron microscopy and angle-resolved x-ray photoelectron spectroscopy. By comparing the line shapes of core-level spectra for the samples with different annealing temperatures, the concentrations of SiO and Hf-silicate with high dielectric constant are found to be highest for Hf O2 film annealed at 700 °C. This result supports that the accumulation capacitance of the sample annealed at 700 °C is not deteriorated in spite of a steep increase in interfacial layer thickness compared with that of the sample annealed at 600 °C.
AB - We present the annealing effects on nanochemistry and electrical properties in Hf O2 dielectrics grown by metalorganic molecular-beam epitaxy. After the postannealing treatment of Hf O2 films in the temperature range of 600-800 °C, the thicknesses and chemical states of the films were examined by high-resolution transmission electron microscopy and angle-resolved x-ray photoelectron spectroscopy. By comparing the line shapes of core-level spectra for the samples with different annealing temperatures, the concentrations of SiO and Hf-silicate with high dielectric constant are found to be highest for Hf O2 film annealed at 700 °C. This result supports that the accumulation capacitance of the sample annealed at 700 °C is not deteriorated in spite of a steep increase in interfacial layer thickness compared with that of the sample annealed at 600 °C.
UR - http://www.scopus.com/inward/record.url?scp=17944373986&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=17944373986&partnerID=8YFLogxK
U2 - 10.1063/1.1873049
DO - 10.1063/1.1873049
M3 - Article
AN - SCOPUS:17944373986
VL - 86
SP - 1
EP - 3
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 10
M1 - 102903
ER -