Correlation of nanochemistry and electrical properties in Hf O2 films grown by metalorganic molecular-beam epitaxy

Tae Hyoung Moon; Moon Ho Ham; Jae Min Myoung

doi:10.1063/1.1873049

Correlation of nanochemistry and electrical properties in Hf O2 films grown by metalorganic molecular-beam epitaxy

Tae Hyoung Moon, Moon Ho Ham, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We present the annealing effects on nanochemistry and electrical properties in Hf O2 dielectrics grown by metalorganic molecular-beam epitaxy. After the postannealing treatment of Hf O2 films in the temperature range of 600-800 °C, the thicknesses and chemical states of the films were examined by high-resolution transmission electron microscopy and angle-resolved x-ray photoelectron spectroscopy. By comparing the line shapes of core-level spectra for the samples with different annealing temperatures, the concentrations of SiO and Hf-silicate with high dielectric constant are found to be highest for Hf O2 film annealed at 700 °C. This result supports that the accumulation capacitance of the sample annealed at 700 °C is not deteriorated in spite of a steep increase in interfacial layer thickness compared with that of the sample annealed at 600 °C.

Original language	English
Article number	102903
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	10
DOIs	https://doi.org/10.1063/1.1873049
Publication status	Published - 2005 Mar 7

Bibliographical note

Funding Information:
This work is supported by Grant No. R01-2001-000-00271-0 from the Basic Research Program of the Korea Science and Engineering Foundation.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1873049

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title = "Correlation of nanochemistry and electrical properties in Hf O2 films grown by metalorganic molecular-beam epitaxy",

abstract = "We present the annealing effects on nanochemistry and electrical properties in Hf O2 dielectrics grown by metalorganic molecular-beam epitaxy. After the postannealing treatment of Hf O2 films in the temperature range of 600-800 °C, the thicknesses and chemical states of the films were examined by high-resolution transmission electron microscopy and angle-resolved x-ray photoelectron spectroscopy. By comparing the line shapes of core-level spectra for the samples with different annealing temperatures, the concentrations of SiO and Hf-silicate with high dielectric constant are found to be highest for Hf O2 film annealed at 700 °C. This result supports that the accumulation capacitance of the sample annealed at 700 °C is not deteriorated in spite of a steep increase in interfacial layer thickness compared with that of the sample annealed at 600 °C.",

author = "Moon, {Tae Hyoung} and Ham, {Moon Ho} and Myoung, {Jae Min}",

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AU - Myoung, Jae Min

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