Correlation of nanochemistry and electrical properties in Hf O2 films grown by metalorganic molecular-beam epitaxy

Tae Hyoung Moon, Moon Ho Ham, Jae Min Myoung

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We present the annealing effects on nanochemistry and electrical properties in Hf O2 dielectrics grown by metalorganic molecular-beam epitaxy. After the postannealing treatment of Hf O2 films in the temperature range of 600-800 °C, the thicknesses and chemical states of the films were examined by high-resolution transmission electron microscopy and angle-resolved x-ray photoelectron spectroscopy. By comparing the line shapes of core-level spectra for the samples with different annealing temperatures, the concentrations of SiO and Hf-silicate with high dielectric constant are found to be highest for Hf O2 film annealed at 700 °C. This result supports that the accumulation capacitance of the sample annealed at 700 °C is not deteriorated in spite of a steep increase in interfacial layer thickness compared with that of the sample annealed at 600 °C.

Original languageEnglish
Article number102903
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number10
DOIs
Publication statusPublished - 2005 Mar 7

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molecular beam epitaxy
electrical properties
annealing
x ray spectroscopy
line shape
silicates
capacitance
photoelectron spectroscopy
permittivity
transmission electron microscopy
temperature
high resolution

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "We present the annealing effects on nanochemistry and electrical properties in Hf O2 dielectrics grown by metalorganic molecular-beam epitaxy. After the postannealing treatment of Hf O2 films in the temperature range of 600-800 °C, the thicknesses and chemical states of the films were examined by high-resolution transmission electron microscopy and angle-resolved x-ray photoelectron spectroscopy. By comparing the line shapes of core-level spectra for the samples with different annealing temperatures, the concentrations of SiO and Hf-silicate with high dielectric constant are found to be highest for Hf O2 film annealed at 700 °C. This result supports that the accumulation capacitance of the sample annealed at 700 °C is not deteriorated in spite of a steep increase in interfacial layer thickness compared with that of the sample annealed at 600 °C.",
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Correlation of nanochemistry and electrical properties in Hf O2 films grown by metalorganic molecular-beam epitaxy. / Moon, Tae Hyoung; Ham, Moon Ho; Myoung, Jae Min.

In: Applied Physics Letters, Vol. 86, No. 10, 102903, 07.03.2005, p. 1-3.

Research output: Contribution to journalArticle

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