Abstract
We present the annealing effects on nanochemistry and electrical properties in Hf O2 dielectrics grown by metalorganic molecular-beam epitaxy. After the postannealing treatment of Hf O2 films in the temperature range of 600-800 °C, the thicknesses and chemical states of the films were examined by high-resolution transmission electron microscopy and angle-resolved x-ray photoelectron spectroscopy. By comparing the line shapes of core-level spectra for the samples with different annealing temperatures, the concentrations of SiO and Hf-silicate with high dielectric constant are found to be highest for Hf O2 film annealed at 700 °C. This result supports that the accumulation capacitance of the sample annealed at 700 °C is not deteriorated in spite of a steep increase in interfacial layer thickness compared with that of the sample annealed at 600 °C.
Original language | English |
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Article number | 102903 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2005 Mar 7 |
Bibliographical note
Funding Information:This work is supported by Grant No. R01-2001-000-00271-0 from the Basic Research Program of the Korea Science and Engineering Foundation.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)