Correlation of nanochemistry and electrical properties in Hf O2 films grown by metalorganic molecular-beam epitaxy

Tae Hyoung Moon, Moon Ho Ham, Jae Min Myoung

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We present the annealing effects on nanochemistry and electrical properties in Hf O2 dielectrics grown by metalorganic molecular-beam epitaxy. After the postannealing treatment of Hf O2 films in the temperature range of 600-800 °C, the thicknesses and chemical states of the films were examined by high-resolution transmission electron microscopy and angle-resolved x-ray photoelectron spectroscopy. By comparing the line shapes of core-level spectra for the samples with different annealing temperatures, the concentrations of SiO and Hf-silicate with high dielectric constant are found to be highest for Hf O2 film annealed at 700 °C. This result supports that the accumulation capacitance of the sample annealed at 700 °C is not deteriorated in spite of a steep increase in interfacial layer thickness compared with that of the sample annealed at 600 °C.

Original languageEnglish
Article number102903
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number10
DOIs
Publication statusPublished - 2005 Mar 7

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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