Corrigendum to ’Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films’[Acta Materialia 222 (2022) 117405] (Acta Materialia (2022) 222, (S1359645421007849), (10.1016/j.actamat.2021.117405))

Dong Hyun Lee; Geun Taek Yu; Ju Yong Park; Se Hyun Kim; Kun Yang; Geun Hyeong Park; Jin Ju Ryu; Je In Lee; Gun Hwan Kim; Min Hyuk Park

doi:10.1016/j.actamat.2023.118732

Corrigendum to ’Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf_0.5Zr_0.5O₂ thin films’[Acta Materialia 222 (2022) 117405] (Acta Materialia (2022) 222, (S1359645421007849), (10.1016/j.actamat.2021.117405))

Dong Hyun Lee, Geun Taek Yu, Ju Yong Park, Se Hyun Kim, Kun Yang, Geun Hyeong Park, Jin Ju Ryu, Je In Lee, Gun Hwan Kim, Min Hyuk Park

School of System & Semiconductor Engineering

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

The authors regret that the following information in the acknowledgments section was omitted: D. H. Lee was supported by BK21 FOUR Program by Pusan National University Research Grant, 2021. The authors would like to apologise for any inconvenience caused.

Original language	English
Article number	118732
Journal	Acta Materialia
Volume	247
DOIs	https://doi.org/10.1016/j.actamat.2023.118732
Publication status	Published - 2023 Apr 1

Bibliographical note

Funding Information:
D. H. Lee was supported by BK21 FOUR Program by Pusan National University Research Grant, 2021.

Publisher Copyright:
© 2023

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Polymers and Plastics
Metals and Alloys

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10.1016/j.actamat.2023.118732

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Lee, D. H., Yu, G. T., Park, J. Y., Kim, S. H., Yang, K., Park, G. H., Ryu, J. J., Lee, J. I., Kim, G. H., & Park, M. H. (2023). Corrigendum to ’Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf_0.5Zr_0.5O₂ thin films’[Acta Materialia 222 (2022) 117405] (Acta Materialia (2022) 222, (S1359645421007849), (10.1016/j.actamat.2021.117405)). Acta Materialia, 247, [118732]. https://doi.org/10.1016/j.actamat.2023.118732

@article{1aabc19efb8445d29ffda0bff96710d0,

title = "Corrigendum to {\textquoteright}Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films{\textquoteright}[Acta Materialia 222 (2022) 117405] (Acta Materialia (2022) 222, (S1359645421007849), (10.1016/j.actamat.2021.117405))",

abstract = "The authors regret that the following information in the acknowledgments section was omitted: D. H. Lee was supported by BK21 FOUR Program by Pusan National University Research Grant, 2021. The authors would like to apologise for any inconvenience caused.",

author = "Lee, {Dong Hyun} and Yu, {Geun Taek} and Park, {Ju Yong} and Kim, {Se Hyun} and Kun Yang and Park, {Geun Hyeong} and Ryu, {Jin Ju} and Lee, {Je In} and Kim, {Gun Hwan} and Park, {Min Hyuk}",

note = "Funding Information: D. H. Lee was supported by BK21 FOUR Program by Pusan National University Research Grant, 2021. Publisher Copyright: {\textcopyright} 2023",

year = "2023",

month = apr,

day = "1",

doi = "10.1016/j.actamat.2023.118732",

language = "English",

volume = "247",

journal = "Acta Materialia",

issn = "1359-6454",

publisher = "Elsevier Limited",

}

Lee, DH, Yu, GT, Park, JY, Kim, SH, Yang, K, Park, GH, Ryu, JJ, Lee, JI, Kim, GH & Park, MH 2023, 'Corrigendum to ’Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf_0.5Zr_0.5O₂ thin films’[Acta Materialia 222 (2022) 117405] (Acta Materialia (2022) 222, (S1359645421007849), (10.1016/j.actamat.2021.117405))', Acta Materialia, vol. 247, 118732. https://doi.org/10.1016/j.actamat.2023.118732

Corrigendum to ’Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf_0.5Zr_0.5O₂ thin films’[Acta Materialia 222 (2022) 117405] (Acta Materialia (2022) 222, (S1359645421007849), (10.1016/j.actamat.2021.117405)). / Lee, Dong Hyun; Yu, Geun Taek; Park, Ju Yong et al.

In: Acta Materialia, Vol. 247, 118732, 01.04.2023.

Research output: Contribution to journal › Comment/debate › peer-review

TY - JOUR

T1 - Corrigendum to ’Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films’[Acta Materialia 222 (2022) 117405] (Acta Materialia (2022) 222, (S1359645421007849), (10.1016/j.actamat.2021.117405))

AU - Lee, Dong Hyun

AU - Yu, Geun Taek

AU - Park, Ju Yong

AU - Kim, Se Hyun

AU - Yang, Kun

AU - Park, Geun Hyeong

AU - Ryu, Jin Ju

AU - Lee, Je In

AU - Kim, Gun Hwan

AU - Park, Min Hyuk

PY - 2023/4/1

Y1 - 2023/4/1

N2 - The authors regret that the following information in the acknowledgments section was omitted: D. H. Lee was supported by BK21 FOUR Program by Pusan National University Research Grant, 2021. The authors would like to apologise for any inconvenience caused.

AB - The authors regret that the following information in the acknowledgments section was omitted: D. H. Lee was supported by BK21 FOUR Program by Pusan National University Research Grant, 2021. The authors would like to apologise for any inconvenience caused.

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Lee DH, Yu GT, Park JY, Kim SH, Yang K, Park GH et al. Corrigendum to ’Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf_0.5Zr_0.5O₂ thin films’[Acta Materialia 222 (2022) 117405] (Acta Materialia (2022) 222, (S1359645421007849), (10.1016/j.actamat.2021.117405)). Acta Materialia. 2023 Apr 1;247:118732. doi: 10.1016/j.actamat.2023.118732