Ultra-thin Co2MnSi Heusler alloy improves perpendicular magnetic anisotropy of FePd in an MgO-based magnetic tunnel junction after annealing it just once at a temperature of as low as 400 °C. Co2MnSi as thin as 1.0nm inserted between MgO and FePd facilitated phase-transformation of 3-nm-thick FePd to ordered L10 and led a change in magnetic anisotropy to perpendicular-to-the-plane. To make it even better, FePd also helped the phase-transformation of Co2MnSi to ordered B2 known to have high spin polarization, which makes the L10 FePd/B2 Co2MnSi bilayer promising for perpendicular-magnetic tunnel junction and improving both thermal stability and tunnel magnetoresistance.
Bibliographical noteFunding Information:
The authors thank Dr. Hyun Hwi Lee (PAL) and Dr. Jin-Gyu Kim (KBSI) for help with discussion about the microstructure and Ube Material Industries, Ltd. in Japan for their support in providing an MgO sputtering target of high quality. This research was supported by the Future Semiconductor Device Technology Development Program (10044723) funded by Ministry of Trade, Industry and Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC), the industry-university cooperation project of the SK Hynix Semiconductor Inc., and Basic Science Research Program through the National Research Foundation (NRF) of Korea funded by the Ministry of Education (No. 2013R1A1A2013745 and No. 2014R1A2A1A11050290).
© 2016 The Japan Society of Applied Physics.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)