Counterbalanced Effect of Surface Trap and Auger Recombination on the Transverse Terahertz Carrier Dynamics in Silicon Nanowires

Chihun In, Jungmok Seo, Hyukho Kwon, Jeongmook Choi, Sangwan Sim, Jaeseok Kim, Taeyong Kim, Taeyoon Lee, Hyunyong Choi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The surface-trap mediated carrier recombination is a crucial feature in characterizing the optoelectronic properties of nanowires (NWs). Due to the one-dimensional characteristics, the photoexcited carriers experiences μltiple carrier interactions in the transverse direction such that strong carrier-carrier interactions are expected to play an important role in the NW carrier recombination. Here, using ultrafast optical-pump and terahertz-probe spectroscopy, we show that the Auger scattering significantly reduces the trap-mediated decay process. Systematic studies on bulk Si, bundled, individual, and encapsulated (reduced surface-trap density) SiNWs reveal that the effect of Auger recombination exhibits strong pump-fluence dependence depending on the surface-treatment condition.

Original languageEnglish
Article number7109945
Pages (from-to)605-612
Number of pages8
JournalIEEE Transactions on Terahertz Science and Technology
Volume5
Issue number4
DOIs
Publication statusPublished - 2015 Jul 1

All Science Journal Classification (ASJC) codes

  • Radiation
  • Electrical and Electronic Engineering

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