Coupling top- and bottom-gate ZnO thin film transistors for low voltage, high gain inverter

Min Suk Oh, Jeong In Han, Kimoon Lee, Byoung H. Lee, Myung M. Sung, Seongil Im

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We reported on the fabrication of depletion-load-type ZnO thin film transistor (TFT) inverters coupling top- and bottom-gate TFTs that have 20 nm thin Al2O3 dielectrics grown by atomic layer deposition. Because the top-gate ZnO TFT showed a lower field-effect mobility of 0.1 cm 2 /V s than that of the bottom-gate device (2.4 cm2 /V s), we used the top- and bottom-gate structures as driver and load transistors, respectively, to adjust the transition voltage of the inverter with an identical width/length dimension for both TFTs. Our ZnO inverter demonstrated an excellent voltage gain of ∼41 at a low supply voltage of 5 V.

Original languageEnglish
Pages (from-to)H194-H196
JournalElectrochemical and Solid-State Letters
Volume13
Issue number6
DOIs
Publication statusPublished - 2010 Apr 27

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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