Abstract
We report the fabrication of hybrid PN junction diode and complementary (CMOS) inverters, where 2D p-type MoTe2 and n-type thin film InGaZnO (IGZO) are coupled for each device process. IGZO thin film was initially patterned by conventional photolithography either for n-type material in a PN diode or for n-channel of top-gate field-effect transistors (FET) in CMOS inverter. The hybrid PN junction diode shows a good ideality factor of 1.57 and quite a high ON/OFF rectification ratio of ∼3 × 104. Under photons, our hybrid PN diode appeared somewhat stable only responding to high-energy photons of blue and ultraviolet. Our 2D nanosheet-oxide film hybrid CMOS inverter exhibits voltage gains as high as ∼40 at 5 V, low power consumption less than around a few nW at 1 V, and ∼200 μs switching dynamics.
| Original language | English |
|---|---|
| Pages (from-to) | 15592-15598 |
| Number of pages | 7 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 9 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 2017 May 10 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
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Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters. / Lee, Han Sol; Choi, Kyunghee; Kim, Jin Sung; Yu, Sanghyuck; Ko, Kyeong Rok; Im, Seongil.
In: ACS Applied Materials and Interfaces, Vol. 9, No. 18, 10.05.2017, p. 15592-15598.Research output: Contribution to journal › Article
TY - JOUR
T1 - Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters
AU - Lee, Han Sol
AU - Choi, Kyunghee
AU - Kim, Jin Sung
AU - Yu, Sanghyuck
AU - Ko, Kyeong Rok
AU - Im, Seongil
PY - 2017/5/10
Y1 - 2017/5/10
N2 - We report the fabrication of hybrid PN junction diode and complementary (CMOS) inverters, where 2D p-type MoTe2 and n-type thin film InGaZnO (IGZO) are coupled for each device process. IGZO thin film was initially patterned by conventional photolithography either for n-type material in a PN diode or for n-channel of top-gate field-effect transistors (FET) in CMOS inverter. The hybrid PN junction diode shows a good ideality factor of 1.57 and quite a high ON/OFF rectification ratio of ∼3 × 104. Under photons, our hybrid PN diode appeared somewhat stable only responding to high-energy photons of blue and ultraviolet. Our 2D nanosheet-oxide film hybrid CMOS inverter exhibits voltage gains as high as ∼40 at 5 V, low power consumption less than around a few nW at 1 V, and ∼200 μs switching dynamics.
AB - We report the fabrication of hybrid PN junction diode and complementary (CMOS) inverters, where 2D p-type MoTe2 and n-type thin film InGaZnO (IGZO) are coupled for each device process. IGZO thin film was initially patterned by conventional photolithography either for n-type material in a PN diode or for n-channel of top-gate field-effect transistors (FET) in CMOS inverter. The hybrid PN junction diode shows a good ideality factor of 1.57 and quite a high ON/OFF rectification ratio of ∼3 × 104. Under photons, our hybrid PN diode appeared somewhat stable only responding to high-energy photons of blue and ultraviolet. Our 2D nanosheet-oxide film hybrid CMOS inverter exhibits voltage gains as high as ∼40 at 5 V, low power consumption less than around a few nW at 1 V, and ∼200 μs switching dynamics.
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U2 - 10.1021/acsami.7b02838
DO - 10.1021/acsami.7b02838
M3 - Article
AN - SCOPUS:85019223444
VL - 9
SP - 15592
EP - 15598
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 18
ER -