Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters

Han Sol Lee, Kyunghee Choi, Jin Sung Kim, Sanghyuck Yu, Kyeong Rok Ko, Seongil Im

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


We report the fabrication of hybrid PN junction diode and complementary (CMOS) inverters, where 2D p-type MoTe2 and n-type thin film InGaZnO (IGZO) are coupled for each device process. IGZO thin film was initially patterned by conventional photolithography either for n-type material in a PN diode or for n-channel of top-gate field-effect transistors (FET) in CMOS inverter. The hybrid PN junction diode shows a good ideality factor of 1.57 and quite a high ON/OFF rectification ratio of ∼3 × 104. Under photons, our hybrid PN diode appeared somewhat stable only responding to high-energy photons of blue and ultraviolet. Our 2D nanosheet-oxide film hybrid CMOS inverter exhibits voltage gains as high as ∼40 at 5 V, low power consumption less than around a few nW at 1 V, and ∼200 μs switching dynamics.

Original languageEnglish
Pages (from-to)15592-15598
Number of pages7
JournalACS Applied Materials and Interfaces
Issue number18
Publication statusPublished - 2017 May 10

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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