Abstract
We report the fabrication of hybrid PN junction diode and complementary (CMOS) inverters, where 2D p-type MoTe2 and n-type thin film InGaZnO (IGZO) are coupled for each device process. IGZO thin film was initially patterned by conventional photolithography either for n-type material in a PN diode or for n-channel of top-gate field-effect transistors (FET) in CMOS inverter. The hybrid PN junction diode shows a good ideality factor of 1.57 and quite a high ON/OFF rectification ratio of ∼3 × 104. Under photons, our hybrid PN diode appeared somewhat stable only responding to high-energy photons of blue and ultraviolet. Our 2D nanosheet-oxide film hybrid CMOS inverter exhibits voltage gains as high as ∼40 at 5 V, low power consumption less than around a few nW at 1 V, and ∼200 μs switching dynamics.
Original language | English |
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Pages (from-to) | 15592-15598 |
Number of pages | 7 |
Journal | ACS Applied Materials and Interfaces |
Volume | 9 |
Issue number | 18 |
DOIs | |
Publication status | Published - 2017 May 10 |
Bibliographical note
Publisher Copyright:© 2017 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Materials Science(all)