Crack-guided effect on dynamic mechanical stress for foldable low temperature polycrystalline silicon thin film transistors

Sang Myung Lee, Chuntaek Park, Ilgu Yun

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In the thin film transistors (TFTs) device research for foldable display, the degradation effect by the mechanical stress is crucial. Here, the crack position is critical for TFT reliability. However, it is difficult to characterize the crack position due to the random generation of the crack by mechanical stress. In this paper, the crack-guided low temperature polycrystalline silicon (LTPS) TFT test structures are fabricated and the crack-guided effects on mechanical stress of the tested TFT structure are analyzed. To strain on the foldable LTPS TFTs, 50,000 cycles of tensile and parallel direction dynamic mechanical stresses were applied with 2.5-mm bending radius. Based on the results, the generating crack position can be guided and controlled and also TFT reliability for foldable display can be enhanced.

Original languageEnglish
Pages (from-to)84-87
Number of pages4
JournalMicroelectronics Reliability
Volume64
DOIs
Publication statusPublished - 2016 Sep 1

Fingerprint

Thin film transistors
Polysilicon
transistors
cracks
Cracks
silicon
thin films
Temperature
Display devices
degradation
Degradation
radii

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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title = "Crack-guided effect on dynamic mechanical stress for foldable low temperature polycrystalline silicon thin film transistors",
abstract = "In the thin film transistors (TFTs) device research for foldable display, the degradation effect by the mechanical stress is crucial. Here, the crack position is critical for TFT reliability. However, it is difficult to characterize the crack position due to the random generation of the crack by mechanical stress. In this paper, the crack-guided low temperature polycrystalline silicon (LTPS) TFT test structures are fabricated and the crack-guided effects on mechanical stress of the tested TFT structure are analyzed. To strain on the foldable LTPS TFTs, 50,000 cycles of tensile and parallel direction dynamic mechanical stresses were applied with 2.5-mm bending radius. Based on the results, the generating crack position can be guided and controlled and also TFT reliability for foldable display can be enhanced.",
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Crack-guided effect on dynamic mechanical stress for foldable low temperature polycrystalline silicon thin film transistors. / Lee, Sang Myung; Park, Chuntaek; Yun, Ilgu.

In: Microelectronics Reliability, Vol. 64, 01.09.2016, p. 84-87.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Yun, Ilgu

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AB - In the thin film transistors (TFTs) device research for foldable display, the degradation effect by the mechanical stress is crucial. Here, the crack position is critical for TFT reliability. However, it is difficult to characterize the crack position due to the random generation of the crack by mechanical stress. In this paper, the crack-guided low temperature polycrystalline silicon (LTPS) TFT test structures are fabricated and the crack-guided effects on mechanical stress of the tested TFT structure are analyzed. To strain on the foldable LTPS TFTs, 50,000 cycles of tensile and parallel direction dynamic mechanical stresses were applied with 2.5-mm bending radius. Based on the results, the generating crack position can be guided and controlled and also TFT reliability for foldable display can be enhanced.

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