Critical factors to achieve low voltage- and capacitance-based organic field-effect transistors

Mi Jang, Ji Hoon Park, Seongil Im, Se Hyun Kim, Hoichang Yang

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Hydrophobic organo-compatible but low-capacitance dielectrics (10.5 nFcm-2), polystyrene-grafted SiO2 could induce surface-mediated large crystal grains of face-to-face stacked triethylsilylethynyl anthradithiophene (TES-ADT), producing more efficient charge-carrier transport, in comparison to μm-sized pentacene crystals containing a face-to-edge packing. Low-voltage operating TES-ADT OFETs showed good device performance (μFET ≈ 1.3 cm2V -1 s-1, Vth ≈ 0.5 V, SS ≈ 0.2 V), as well as excellent device reliability.

Original languageEnglish
Pages (from-to)288-292
Number of pages5
JournalAdvanced Materials
Volume26
Issue number2
DOIs
Publication statusPublished - 2014 Jan 15

Fingerprint

Organic field effect transistors
Capacitance
Crystals
Carrier transport
Polystyrenes
Electric potential
Field effect transistors
Charge carriers
anthradithiophene
pentacene

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Jang, Mi ; Park, Ji Hoon ; Im, Seongil ; Kim, Se Hyun ; Yang, Hoichang. / Critical factors to achieve low voltage- and capacitance-based organic field-effect transistors. In: Advanced Materials. 2014 ; Vol. 26, No. 2. pp. 288-292.
@article{6be31ea8ce914cbf8c0dccfb68588c7f,
title = "Critical factors to achieve low voltage- and capacitance-based organic field-effect transistors",
abstract = "Hydrophobic organo-compatible but low-capacitance dielectrics (10.5 nFcm-2), polystyrene-grafted SiO2 could induce surface-mediated large crystal grains of face-to-face stacked triethylsilylethynyl anthradithiophene (TES-ADT), producing more efficient charge-carrier transport, in comparison to μm-sized pentacene crystals containing a face-to-edge packing. Low-voltage operating TES-ADT OFETs showed good device performance (μFET ≈ 1.3 cm2V -1 s-1, Vth ≈ 0.5 V, SS ≈ 0.2 V), as well as excellent device reliability.",
author = "Mi Jang and Park, {Ji Hoon} and Seongil Im and Kim, {Se Hyun} and Hoichang Yang",
year = "2014",
month = "1",
day = "15",
doi = "10.1002/adma.201303388",
language = "English",
volume = "26",
pages = "288--292",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "2",

}

Critical factors to achieve low voltage- and capacitance-based organic field-effect transistors. / Jang, Mi; Park, Ji Hoon; Im, Seongil; Kim, Se Hyun; Yang, Hoichang.

In: Advanced Materials, Vol. 26, No. 2, 15.01.2014, p. 288-292.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Critical factors to achieve low voltage- and capacitance-based organic field-effect transistors

AU - Jang, Mi

AU - Park, Ji Hoon

AU - Im, Seongil

AU - Kim, Se Hyun

AU - Yang, Hoichang

PY - 2014/1/15

Y1 - 2014/1/15

N2 - Hydrophobic organo-compatible but low-capacitance dielectrics (10.5 nFcm-2), polystyrene-grafted SiO2 could induce surface-mediated large crystal grains of face-to-face stacked triethylsilylethynyl anthradithiophene (TES-ADT), producing more efficient charge-carrier transport, in comparison to μm-sized pentacene crystals containing a face-to-edge packing. Low-voltage operating TES-ADT OFETs showed good device performance (μFET ≈ 1.3 cm2V -1 s-1, Vth ≈ 0.5 V, SS ≈ 0.2 V), as well as excellent device reliability.

AB - Hydrophobic organo-compatible but low-capacitance dielectrics (10.5 nFcm-2), polystyrene-grafted SiO2 could induce surface-mediated large crystal grains of face-to-face stacked triethylsilylethynyl anthradithiophene (TES-ADT), producing more efficient charge-carrier transport, in comparison to μm-sized pentacene crystals containing a face-to-edge packing. Low-voltage operating TES-ADT OFETs showed good device performance (μFET ≈ 1.3 cm2V -1 s-1, Vth ≈ 0.5 V, SS ≈ 0.2 V), as well as excellent device reliability.

UR - http://www.scopus.com/inward/record.url?scp=84890323243&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84890323243&partnerID=8YFLogxK

U2 - 10.1002/adma.201303388

DO - 10.1002/adma.201303388

M3 - Article

AN - SCOPUS:84890323243

VL - 26

SP - 288

EP - 292

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 2

ER -