Critical factors to achieve low voltage- and capacitance-based organic field-effect transistors

Mi Jang, Ji Hoon Park, Seongil Im, Se Hyun Kim, Hoichang Yang

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Hydrophobic organo-compatible but low-capacitance dielectrics (10.5 nFcm-2), polystyrene-grafted SiO2 could induce surface-mediated large crystal grains of face-to-face stacked triethylsilylethynyl anthradithiophene (TES-ADT), producing more efficient charge-carrier transport, in comparison to μm-sized pentacene crystals containing a face-to-edge packing. Low-voltage operating TES-ADT OFETs showed good device performance (μFET ≈ 1.3 cm2V -1 s-1, Vth ≈ 0.5 V, SS ≈ 0.2 V), as well as excellent device reliability.

Original languageEnglish
Pages (from-to)288-292
Number of pages5
JournalAdvanced Materials
Volume26
Issue number2
DOIs
Publication statusPublished - 2014 Jan 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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