Abstract
In this Letter, Thulium (Tm) interlayer was applied at the junction of Ni-InGaAs/n- In0.53Ga0.47As and specific contact resistivity (ρc) was derived at the junction using circular transmission line model (CTLM) procedure. The contact resistance values obtained using the CTLM were 1.65 × 10−8 and 2.11 × 10−6 Ω cm2 for a 5 nm thick Tm interlayer sample and the reference sample (without the Tm interlayer), respectively. The finding shows a drastic decrease in contact resistance and Tm interlayer reduce the contact resistance by more than two orders of magnitude compared to the reference sample. The surface and structural properties of Ni-InGaAs with Tm interlayer were characterized using XRD, FE-SEM and TEM and the elemental depth profile using SIMS analysis.
| Original language | English |
|---|---|
| Pages (from-to) | 151-154 |
| Number of pages | 4 |
| Journal | Vacuum |
| Volume | 166 |
| DOIs | |
| Publication status | Published - 2019 Aug |
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All Science Journal Classification (ASJC) codes
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
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Critical role of thulium metal interlayer in ultra-low contact resistance reduction in Ni-InGaAs/n-InGaAs for n-MOSFETs. / Eadi, Sunil Babu; Lee, Jeong Chan; Song, Hyeong Sub; Oh, Jungwoo; Lee, Hi Deok.
In: Vacuum, Vol. 166, 08.2019, p. 151-154.Research output: Contribution to journal › Article
TY - JOUR
T1 - Critical role of thulium metal interlayer in ultra-low contact resistance reduction in Ni-InGaAs/n-InGaAs for n-MOSFETs
AU - Eadi, Sunil Babu
AU - Lee, Jeong Chan
AU - Song, Hyeong Sub
AU - Oh, Jungwoo
AU - Lee, Hi Deok
PY - 2019/8
Y1 - 2019/8
N2 - In this Letter, Thulium (Tm) interlayer was applied at the junction of Ni-InGaAs/n- In0.53Ga0.47As and specific contact resistivity (ρc) was derived at the junction using circular transmission line model (CTLM) procedure. The contact resistance values obtained using the CTLM were 1.65 × 10−8 and 2.11 × 10−6 Ω cm2 for a 5 nm thick Tm interlayer sample and the reference sample (without the Tm interlayer), respectively. The finding shows a drastic decrease in contact resistance and Tm interlayer reduce the contact resistance by more than two orders of magnitude compared to the reference sample. The surface and structural properties of Ni-InGaAs with Tm interlayer were characterized using XRD, FE-SEM and TEM and the elemental depth profile using SIMS analysis.
AB - In this Letter, Thulium (Tm) interlayer was applied at the junction of Ni-InGaAs/n- In0.53Ga0.47As and specific contact resistivity (ρc) was derived at the junction using circular transmission line model (CTLM) procedure. The contact resistance values obtained using the CTLM were 1.65 × 10−8 and 2.11 × 10−6 Ω cm2 for a 5 nm thick Tm interlayer sample and the reference sample (without the Tm interlayer), respectively. The finding shows a drastic decrease in contact resistance and Tm interlayer reduce the contact resistance by more than two orders of magnitude compared to the reference sample. The surface and structural properties of Ni-InGaAs with Tm interlayer were characterized using XRD, FE-SEM and TEM and the elemental depth profile using SIMS analysis.
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U2 - 10.1016/j.vacuum.2019.05.004
DO - 10.1016/j.vacuum.2019.05.004
M3 - Article
AN - SCOPUS:85065530460
VL - 166
SP - 151
EP - 154
JO - Vacuum
JF - Vacuum
SN - 0042-207X
ER -