Critical role of thulium metal interlayer in ultra-low contact resistance reduction in Ni-InGaAs/n-InGaAs for n-MOSFETs

Sunil Babu Eadi, Jeong Chan Lee, Hyeong Sub Song, Jungwoo Oh, Hi Deok Lee

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1 Citation (Scopus)


In this Letter, Thulium (Tm) interlayer was applied at the junction of Ni-InGaAs/n- In0.53Ga0.47As and specific contact resistivity (ρc) was derived at the junction using circular transmission line model (CTLM) procedure. The contact resistance values obtained using the CTLM were 1.65 × 10−8 and 2.11 × 10−6 Ω cm2 for a 5 nm thick Tm interlayer sample and the reference sample (without the Tm interlayer), respectively. The finding shows a drastic decrease in contact resistance and Tm interlayer reduce the contact resistance by more than two orders of magnitude compared to the reference sample. The surface and structural properties of Ni-InGaAs with Tm interlayer were characterized using XRD, FE-SEM and TEM and the elemental depth profile using SIMS analysis.

Original languageEnglish
Pages (from-to)151-154
Number of pages4
Publication statusPublished - 2019 Aug


All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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