Critical role of thulium metal interlayer in ultra-low contact resistance reduction in Ni-InGaAs/n-InGaAs for n-MOSFETs

Sunil Babu Eadi; Jeong Chan Lee; Hyeong Sub Song; Jungwoo Oh; Hi Deok Lee

doi:10.1016/j.vacuum.2019.05.004

Critical role of thulium metal interlayer in ultra-low contact resistance reduction in Ni-InGaAs/n-InGaAs for n-MOSFETs

Sunil Babu Eadi, Jeong Chan Lee, Hyeong Sub Song, Jungwoo Oh, Hi Deok Lee

School of Integrated Technology

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

In this Letter, Thulium (Tm) interlayer was applied at the junction of Ni-InGaAs/n- In_0.53Ga_0.47As and specific contact resistivity (ρ_c) was derived at the junction using circular transmission line model (CTLM) procedure. The contact resistance values obtained using the CTLM were 1.65 × 10⁻⁸ and 2.11 × 10⁻⁶ Ω cm² for a 5 nm thick Tm interlayer sample and the reference sample (without the Tm interlayer), respectively. The finding shows a drastic decrease in contact resistance and Tm interlayer reduce the contact resistance by more than two orders of magnitude compared to the reference sample. The surface and structural properties of Ni-InGaAs with Tm interlayer were characterized using XRD, FE-SEM and TEM and the elemental depth profile using SIMS analysis.

Original language	English
Pages (from-to)	151-154
Number of pages	4
Journal	Vacuum
Volume	166
DOIs	https://doi.org/10.1016/j.vacuum.2019.05.004
Publication status	Published - 2019 Aug

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All Science Journal Classification (ASJC) codes

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

Cite this

Eadi, S. B., Lee, J. C., Song, H. S., Oh, J., & Lee, H. D. (2019). Critical role of thulium metal interlayer in ultra-low contact resistance reduction in Ni-InGaAs/n-InGaAs for n-MOSFETs. Vacuum, 166, 151-154. https://doi.org/10.1016/j.vacuum.2019.05.004

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abstract = "In this Letter, Thulium (Tm) interlayer was applied at the junction of Ni-InGaAs/n- In0.53Ga0.47As and specific contact resistivity (ρc) was derived at the junction using circular transmission line model (CTLM) procedure. The contact resistance values obtained using the CTLM were 1.65 × 10−8 and 2.11 × 10−6 Ω cm2 for a 5 nm thick Tm interlayer sample and the reference sample (without the Tm interlayer), respectively. The finding shows a drastic decrease in contact resistance and Tm interlayer reduce the contact resistance by more than two orders of magnitude compared to the reference sample. The surface and structural properties of Ni-InGaAs with Tm interlayer were characterized using XRD, FE-SEM and TEM and the elemental depth profile using SIMS analysis.",

author = "Eadi, {Sunil Babu} and Lee, {Jeong Chan} and Song, {Hyeong Sub} and Jungwoo Oh and Lee, {Hi Deok}",

year = "2019",

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doi = "10.1016/j.vacuum.2019.05.004",

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AU - Eadi, Sunil Babu

AU - Lee, Jeong Chan

AU - Song, Hyeong Sub

AU - Oh, Jungwoo

AU - Lee, Hi Deok

PY - 2019/8

Y1 - 2019/8

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AB - In this Letter, Thulium (Tm) interlayer was applied at the junction of Ni-InGaAs/n- In0.53Ga0.47As and specific contact resistivity (ρc) was derived at the junction using circular transmission line model (CTLM) procedure. The contact resistance values obtained using the CTLM were 1.65 × 10−8 and 2.11 × 10−6 Ω cm2 for a 5 nm thick Tm interlayer sample and the reference sample (without the Tm interlayer), respectively. The finding shows a drastic decrease in contact resistance and Tm interlayer reduce the contact resistance by more than two orders of magnitude compared to the reference sample. The surface and structural properties of Ni-InGaAs with Tm interlayer were characterized using XRD, FE-SEM and TEM and the elemental depth profile using SIMS analysis.

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10.1016/j.vacuum.2019.05.004