Critical role of thulium metal interlayer in ultra-low contact resistance reduction in Ni-InGaAs/n-InGaAs for n-MOSFETs

Sunil Babu Eadi, Jeong Chan Lee, Hyeong Sub Song, Jungwoo Oh, Hi Deok Lee

Research output: Contribution to journalArticle

Abstract

In this Letter, Thulium (Tm) interlayer was applied at the junction of Ni-InGaAs/n- In0.53Ga0.47As and specific contact resistivity (ρc) was derived at the junction using circular transmission line model (CTLM) procedure. The contact resistance values obtained using the CTLM were 1.65 × 10−8 and 2.11 × 10−6 Ω cm2 for a 5 nm thick Tm interlayer sample and the reference sample (without the Tm interlayer), respectively. The finding shows a drastic decrease in contact resistance and Tm interlayer reduce the contact resistance by more than two orders of magnitude compared to the reference sample. The surface and structural properties of Ni-InGaAs with Tm interlayer were characterized using XRD, FE-SEM and TEM and the elemental depth profile using SIMS analysis.

Original languageEnglish
Pages (from-to)151-154
Number of pages4
JournalVacuum
Volume166
DOIs
Publication statusPublished - 2019 Aug 1

Fingerprint

Thulium
thulium
Contact resistance
contact resistance
interlayers
field effect transistors
Metals
metals
transmission lines
Electric lines
Secondary ion mass spectrometry
surface properties
secondary ion mass spectrometry
Surface properties
Structural properties
electric contacts
Transmission electron microscopy
transmission electron microscopy
Scanning electron microscopy
electrical resistivity

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Cite this

Eadi, Sunil Babu ; Lee, Jeong Chan ; Song, Hyeong Sub ; Oh, Jungwoo ; Lee, Hi Deok. / Critical role of thulium metal interlayer in ultra-low contact resistance reduction in Ni-InGaAs/n-InGaAs for n-MOSFETs. In: Vacuum. 2019 ; Vol. 166. pp. 151-154.
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abstract = "In this Letter, Thulium (Tm) interlayer was applied at the junction of Ni-InGaAs/n- In0.53Ga0.47As and specific contact resistivity (ρc) was derived at the junction using circular transmission line model (CTLM) procedure. The contact resistance values obtained using the CTLM were 1.65 × 10−8 and 2.11 × 10−6 Ω cm2 for a 5 nm thick Tm interlayer sample and the reference sample (without the Tm interlayer), respectively. The finding shows a drastic decrease in contact resistance and Tm interlayer reduce the contact resistance by more than two orders of magnitude compared to the reference sample. The surface and structural properties of Ni-InGaAs with Tm interlayer were characterized using XRD, FE-SEM and TEM and the elemental depth profile using SIMS analysis.",
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Critical role of thulium metal interlayer in ultra-low contact resistance reduction in Ni-InGaAs/n-InGaAs for n-MOSFETs. / Eadi, Sunil Babu; Lee, Jeong Chan; Song, Hyeong Sub; Oh, Jungwoo; Lee, Hi Deok.

In: Vacuum, Vol. 166, 01.08.2019, p. 151-154.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Critical role of thulium metal interlayer in ultra-low contact resistance reduction in Ni-InGaAs/n-InGaAs for n-MOSFETs

AU - Eadi, Sunil Babu

AU - Lee, Jeong Chan

AU - Song, Hyeong Sub

AU - Oh, Jungwoo

AU - Lee, Hi Deok

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