In this Letter, Thulium (Tm) interlayer was applied at the junction of Ni-InGaAs/n- In0.53Ga0.47As and specific contact resistivity (ρc) was derived at the junction using circular transmission line model (CTLM) procedure. The contact resistance values obtained using the CTLM were 1.65 × 10−8 and 2.11 × 10−6 Ω cm2 for a 5 nm thick Tm interlayer sample and the reference sample (without the Tm interlayer), respectively. The finding shows a drastic decrease in contact resistance and Tm interlayer reduce the contact resistance by more than two orders of magnitude compared to the reference sample. The surface and structural properties of Ni-InGaAs with Tm interlayer were characterized using XRD, FE-SEM and TEM and the elemental depth profile using SIMS analysis.
Bibliographical noteFunding Information:
This research was supported by the MOTIE ( Ministry of Trade, Industry and Energy ( 10048536 ) and the KSRC (Korea Semiconductor Research Consortium) support program for the development of future semiconductor devices. This work was also supported by research fund of Chungnam National University ..
© 2019 Elsevier Ltd
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces, Coatings and Films