Critical thickness of GaN thin films on sapphire (0001)

Chinkyo Kim, I. K. Robinson, Jae Min Myoung, Kyuhwan Shim, Myung Cheol Yoo, Kyekyoon Kim

Research output: Contribution to journalArticle

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Abstract

Synchrotron x-ray diffraction was employed to measure the lattice constants a and c of GaN films grown with an AlN buffer layer on sapphire (0001) over a thickness range of 50 Å to 1 μm. We used multiple reflections and a least-squares fit method for high reliability. As the thickness increased, the lattice constant a increased from 3.133 Å to 3.196 Å and c decreased from 5.226 Å to 5.183 Å. The expected trend was fitted to an equilibrium theory, allowing the critical thickness of GaN on AlN to be estimated at 29 Å ± 4 Å in good agreement with a theoretical prediction.

Original languageEnglish
Pages (from-to)2358-2360
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number16
DOIs
Publication statusPublished - 1996 Oct 14

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sapphire
thin films
synchrotrons
x ray diffraction
buffers
trends
predictions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, C., Robinson, I. K., Myoung, J. M., Shim, K., Yoo, M. C., & Kim, K. (1996). Critical thickness of GaN thin films on sapphire (0001). Applied Physics Letters, 69(16), 2358-2360. https://doi.org/10.1063/1.117524
Kim, Chinkyo ; Robinson, I. K. ; Myoung, Jae Min ; Shim, Kyuhwan ; Yoo, Myung Cheol ; Kim, Kyekyoon. / Critical thickness of GaN thin films on sapphire (0001). In: Applied Physics Letters. 1996 ; Vol. 69, No. 16. pp. 2358-2360.
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Kim, C, Robinson, IK, Myoung, JM, Shim, K, Yoo, MC & Kim, K 1996, 'Critical thickness of GaN thin films on sapphire (0001)', Applied Physics Letters, vol. 69, no. 16, pp. 2358-2360. https://doi.org/10.1063/1.117524

Critical thickness of GaN thin films on sapphire (0001). / Kim, Chinkyo; Robinson, I. K.; Myoung, Jae Min; Shim, Kyuhwan; Yoo, Myung Cheol; Kim, Kyekyoon.

In: Applied Physics Letters, Vol. 69, No. 16, 14.10.1996, p. 2358-2360.

Research output: Contribution to journalArticle

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T1 - Critical thickness of GaN thin films on sapphire (0001)

AU - Kim, Chinkyo

AU - Robinson, I. K.

AU - Myoung, Jae Min

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AU - Yoo, Myung Cheol

AU - Kim, Kyekyoon

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AB - Synchrotron x-ray diffraction was employed to measure the lattice constants a and c of GaN films grown with an AlN buffer layer on sapphire (0001) over a thickness range of 50 Å to 1 μm. We used multiple reflections and a least-squares fit method for high reliability. As the thickness increased, the lattice constant a increased from 3.133 Å to 3.196 Å and c decreased from 5.226 Å to 5.183 Å. The expected trend was fitted to an equilibrium theory, allowing the critical thickness of GaN on AlN to be estimated at 29 Å ± 4 Å in good agreement with a theoretical prediction.

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