Cross-plane Seebeck coefficient of ErAs:InGaAs/InGaAlAs superlattices

Gehong Zeng, Joshua M.O. Zide, Woochul Kim, John E. Bowers, Arthur C. Gossard, Zhixi Bian, Yan Zhang, Ali Shakouri, Suzanne L. Singer, Arun Majumdar

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We characterize cross-plane and in-plane Seebeck coefficients for ErAs:InGaAsInGaAlAs superlattices with different carrier concentrations using test patterns integrated with microheaters. The microheater creates a local temperature difference, and the cross-plane Seebeck coefficients of the superlattices are determined by a combination of experimental measurements and finite element simulations. The cross-plane Seebeck coefficients are compared to the in-plane Seebeck coefficients and a significant increase in the cross-plane Seebeck coefficient over the in-plane Seebeck coefficient is observed. Differences between cross-plane and in-plane Seebeck coefficients decrease as the carrier concentration increases, which is indicative of heterostructure thermionic emission in the cross-plane direction.

Original languageEnglish
Article number034502
JournalJournal of Applied Physics
Issue number3
Publication statusPublished - 2007 Feb 26

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Zeng, G., Zide, J. M. O., Kim, W., Bowers, J. E., Gossard, A. C., Bian, Z., Zhang, Y., Shakouri, A., Singer, S. L., & Majumdar, A. (2007). Cross-plane Seebeck coefficient of ErAs:InGaAs/InGaAlAs superlattices. Journal of Applied Physics, 101(3), [034502].