Physically unclonable crypto primitives have potential applications for anti-counterfeiting, identification, and authentication, which are clone proof and resistant to variously physical attack. Conventional physical unclonable function (PUF) based on Si complementary metal-oxide-semiconductor (CMOS) technologies greatly suffers from entropy loss and bit instability due to noise sensitivity. Here we grow atomically thick MoS2 thin film and fabricate field-effect transistors (FETs). The inherently physical randomness of MoS2 transistors from materials growth and device fabrication process makes it appropriate for the application of PUF device. We perform electrical characterizations of MoS2 FETs, collect the data from 448 devices, and generate PUF keys by splitting drain current at specific levels to evaluate the response performance. Proper selection of splitting threshold enables to generate binary, ternary, and double binary keys. The generated PUF keys exhibit good randomness and uniqueness, providing a possibility for harvesting highly secured PUF devices with two-dimensional materials. [Figure not available: see fulltext.]
Bibliographical noteFunding Information:
This work is supported by Research Grant Council of Hong Kong (PolyU 152016/17E) and the Hong Kong Polytechnic University (G-SB79). J.-H. A. acknowledges the support from the National Research Foundation of Korea (NRF-2015R1A3A2066337).
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Electrical and Electronic Engineering