Crystalline beryllium oxide on Si (100) deposited using E-beam evaporator and thermal oxidation

Seonno Yoon, Seung Min Lee, Jung Hwan Yum, Christopher W. Bielawski, Hi Deok Lee, Jungwoo Oh

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Abstract

The growth characteristics and electrical properties of thin films of crystalline beryllium oxide (BeO) on Si (100) substrates grown using electron beam evaporation (EBE) are described. To expand the commercial viability of BeO, a combination of EBE with thermal oxidation was optimized to facilitate its use in nanoscale semiconductor devices. The surfaces of the EBE BeO films were found to be smooth with limited quantities of native oxides or metal silicates, as determined using atomic force measurements and X-ray photoelectron spectroscopy, respectively. Moreover, high-resolution transmission electron microscopy revealed that the films were highly crystalline. Excellent insulator properties, including a dielectric constant of 6.77 and a breakdown voltage of 8.3 MV/cm, were deduced from a series of capacitance–voltage and leakage current measurements. Reflection electron energy loss spectroscopy and ultraviolet photoelectron spectroscopy indicated that the films exhibited a high band gap of 8.6 eV and a high conduction band offset of 3.43 eV. Collectively, these results indicate that EBE BeO films hold promise for use as electrical insulators in Si CMOS and nanoscale device applications.

Original languageEnglish
Pages (from-to)803-809
Number of pages7
JournalApplied Surface Science
Volume479
DOIs
Publication statusPublished - 2019 Jun 15

Bibliographical note

Funding Information:
This research was supported by Korea Electric Power Corporation (Grant number 3): R18XA06-03, the MSIT (Ministry of Science and ICT), Korea, under the “ICT Consilience Creative Program” (IITP-2018-2017-0-01015) supervised by the IITP (Institute for Information & communications Technology Promotion), and the Future Semiconductor Device Technology Development Program (10048536) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium). CWB and JHY acknowledge the Institute for Basic Science (IBS-R019-D1) as well as the BK21 Plus Program as funded by the Ministry of Education and the National Research Foundation of Korea for support.

Funding Information:
This research was supported by Korea Electric Power Corporation (Grant number 3 ): R18XA06-03, the MSIT ( Ministry of Science and ICT ), Korea, under the “ICT Consilience Creative Program” ( IITP-2018-2017-0-01015 ) supervised by the IITP (Institute for Information & communications Technology Promotion), and the Future Semiconductor Device Technology Development Program (10048536) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium). CWB and JHY acknowledge the Institute for Basic Science (IBS-R019-D1) as well as the BK21 Plus Program as funded by the Ministry of Education and the National Research Foundation of Korea for support.

Publisher Copyright:
© 2019

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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