TY - JOUR
T1 - Crystalline direction dependence of spin precession angle and its application to complementary spin logic devices
AU - Park, Youn Ho
AU - Kim, Hyung Jun
AU - Chang, Joonyeon
AU - Choi, Heon Jin
AU - Koo, Hyun Cheol
N1 - Publisher Copyright:
Copyright © 2015 American Scientific Publishers All rights reserved.
Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 2015/10
Y1 - 2015/10
N2 - In a semiconductor channel, spin-orbit interaction is divided into two terms, Rashba and Dresselhaus effects, which are key phenomena for modulating spin precession angles. The direction of Rashba field is always perpendicular to the wavevector but that of Dresselhaus field depends on the crystal orientation. Based on the individual Rashba and Dresselhaus strengths, we calculate spin precession angles for various crystal orientations in an InAs quantum well structure. When the channel length is 1 μm, the precession angle is 550° for the [110] direction and 460° for the [1-10] direction, respectively. Using the two spin transistors with different crystal directions, which play roles of n- and p-type transistors in conventional charge transistors, we propose a complementary logic device.
AB - In a semiconductor channel, spin-orbit interaction is divided into two terms, Rashba and Dresselhaus effects, which are key phenomena for modulating spin precession angles. The direction of Rashba field is always perpendicular to the wavevector but that of Dresselhaus field depends on the crystal orientation. Based on the individual Rashba and Dresselhaus strengths, we calculate spin precession angles for various crystal orientations in an InAs quantum well structure. When the channel length is 1 μm, the precession angle is 550° for the [110] direction and 460° for the [1-10] direction, respectively. Using the two spin transistors with different crystal directions, which play roles of n- and p-type transistors in conventional charge transistors, we propose a complementary logic device.
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U2 - 10.1166/jnn.2015.11143
DO - 10.1166/jnn.2015.11143
M3 - Article
AN - SCOPUS:84947290427
VL - 15
SP - 7518
EP - 7521
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
SN - 1533-4880
IS - 10
ER -