Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor deposition

Eulyong Chae, Kyumin Lee, Hwan Lee, Daehong Ko, Hongsik Jeong, Hyunchul Sohn

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this work, silicon films were deposited on carbon fibers using very high frequency (60 MHz) plasma enhanced chemical vapor deposition (VHF-PECVD) to form Si/carbon fiber hybrid structures for the applications to the flexible solar cell. The effect of deposition conditions of VHF-PECVD such as hydrogen flow rate and R.F. power on the microstructure of Si films was investigated with Raman spectroscopy, X-ray diffraction, field emission scanning electron microscopy, and high resolution transmission electron microscopy. The crystallinity of Si films on carbon fibers showed strong dependence on the hydrogen flow rate and was changed from amorphous structure to partially crystallized structure with increasing hydrogen flow rate. Increasing R.F. power enhanced the crystallinity for amorphous Si films while deteriorated the crystallinity for partially crystallized Si films on carbon fibers. And it was observed that the crystallinity of silicon films on carbon fibers was increased drastically by thermal annealing above 500 °C.

Original languageEnglish
Pages (from-to)137-142
Number of pages6
JournalThin Solid Films
Volume591
DOIs
Publication statusPublished - 2015 Sep 30

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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