Abstract
In this work, silicon films were deposited on carbon fibers using very high frequency (60 MHz) plasma enhanced chemical vapor deposition (VHF-PECVD) to form Si/carbon fiber hybrid structures for the applications to the flexible solar cell. The effect of deposition conditions of VHF-PECVD such as hydrogen flow rate and R.F. power on the microstructure of Si films was investigated with Raman spectroscopy, X-ray diffraction, field emission scanning electron microscopy, and high resolution transmission electron microscopy. The crystallinity of Si films on carbon fibers showed strong dependence on the hydrogen flow rate and was changed from amorphous structure to partially crystallized structure with increasing hydrogen flow rate. Increasing R.F. power enhanced the crystallinity for amorphous Si films while deteriorated the crystallinity for partially crystallized Si films on carbon fibers. And it was observed that the crystallinity of silicon films on carbon fibers was increased drastically by thermal annealing above 500 °C.
| Original language | English |
|---|---|
| Pages (from-to) | 137-142 |
| Number of pages | 6 |
| Journal | Thin Solid Films |
| Volume | 591 |
| DOIs | |
| Publication status | Published - 2015 Sep 30 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
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Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor deposition. / Chae, Eulyong; Lee, Kyumin; Lee, Hwan; Ko, Dae Hong; Jeong, Hongsik; Sohn, Hyunchul.
In: Thin Solid Films, Vol. 591, 30.09.2015, p. 137-142.Research output: Contribution to journal › Article
TY - JOUR
T1 - Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor deposition
AU - Chae, Eulyong
AU - Lee, Kyumin
AU - Lee, Hwan
AU - Ko, Dae Hong
AU - Jeong, Hongsik
AU - Sohn, Hyunchul
PY - 2015/9/30
Y1 - 2015/9/30
N2 - In this work, silicon films were deposited on carbon fibers using very high frequency (60 MHz) plasma enhanced chemical vapor deposition (VHF-PECVD) to form Si/carbon fiber hybrid structures for the applications to the flexible solar cell. The effect of deposition conditions of VHF-PECVD such as hydrogen flow rate and R.F. power on the microstructure of Si films was investigated with Raman spectroscopy, X-ray diffraction, field emission scanning electron microscopy, and high resolution transmission electron microscopy. The crystallinity of Si films on carbon fibers showed strong dependence on the hydrogen flow rate and was changed from amorphous structure to partially crystallized structure with increasing hydrogen flow rate. Increasing R.F. power enhanced the crystallinity for amorphous Si films while deteriorated the crystallinity for partially crystallized Si films on carbon fibers. And it was observed that the crystallinity of silicon films on carbon fibers was increased drastically by thermal annealing above 500 °C.
AB - In this work, silicon films were deposited on carbon fibers using very high frequency (60 MHz) plasma enhanced chemical vapor deposition (VHF-PECVD) to form Si/carbon fiber hybrid structures for the applications to the flexible solar cell. The effect of deposition conditions of VHF-PECVD such as hydrogen flow rate and R.F. power on the microstructure of Si films was investigated with Raman spectroscopy, X-ray diffraction, field emission scanning electron microscopy, and high resolution transmission electron microscopy. The crystallinity of Si films on carbon fibers showed strong dependence on the hydrogen flow rate and was changed from amorphous structure to partially crystallized structure with increasing hydrogen flow rate. Increasing R.F. power enhanced the crystallinity for amorphous Si films while deteriorated the crystallinity for partially crystallized Si films on carbon fibers. And it was observed that the crystallinity of silicon films on carbon fibers was increased drastically by thermal annealing above 500 °C.
UR - http://www.scopus.com/inward/record.url?scp=84942024356&partnerID=8YFLogxK
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U2 - 10.1016/j.tsf.2015.08.029
DO - 10.1016/j.tsf.2015.08.029
M3 - Article
AN - SCOPUS:84942024356
VL - 591
SP - 137
EP - 142
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -