Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor deposition

Eulyong Chae; Kyumin Lee; Hwan Lee; Daehong Ko; Hongsik Jeong; Hyunchul Sohn

doi:10.1016/j.tsf.2015.08.029

Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor deposition

Eulyong Chae, Kyumin Lee, Hwan Lee, Daehong Ko, Hongsik Jeong, Hyunchul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this work, silicon films were deposited on carbon fibers using very high frequency (60 MHz) plasma enhanced chemical vapor deposition (VHF-PECVD) to form Si/carbon fiber hybrid structures for the applications to the flexible solar cell. The effect of deposition conditions of VHF-PECVD such as hydrogen flow rate and R.F. power on the microstructure of Si films was investigated with Raman spectroscopy, X-ray diffraction, field emission scanning electron microscopy, and high resolution transmission electron microscopy. The crystallinity of Si films on carbon fibers showed strong dependence on the hydrogen flow rate and was changed from amorphous structure to partially crystallized structure with increasing hydrogen flow rate. Increasing R.F. power enhanced the crystallinity for amorphous Si films while deteriorated the crystallinity for partially crystallized Si films on carbon fibers. And it was observed that the crystallinity of silicon films on carbon fibers was increased drastically by thermal annealing above 500 °C.

Original language	English
Pages (from-to)	137-142
Number of pages	6
Journal	Thin Solid Films
Volume	591
DOIs	https://doi.org/10.1016/j.tsf.2015.08.029
Publication status	Published - 2015 Sep 30

Bibliographical note

Funding Information:
This work was supported by Strategic Core Materials Technology Development Program (Project No. 10043793 /KEIT) and the IT R&D Program of the Korean Ministry of Trade, Industry and Energy (MTIE/KEIT, Project No. 10043436 ), and by the third stage of the Brain Korea 21 Plus project (BK21 Plus).

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2015.08.029

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title = "Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor deposition",

abstract = "In this work, silicon films were deposited on carbon fibers using very high frequency (60 MHz) plasma enhanced chemical vapor deposition (VHF-PECVD) to form Si/carbon fiber hybrid structures for the applications to the flexible solar cell. The effect of deposition conditions of VHF-PECVD such as hydrogen flow rate and R.F. power on the microstructure of Si films was investigated with Raman spectroscopy, X-ray diffraction, field emission scanning electron microscopy, and high resolution transmission electron microscopy. The crystallinity of Si films on carbon fibers showed strong dependence on the hydrogen flow rate and was changed from amorphous structure to partially crystallized structure with increasing hydrogen flow rate. Increasing R.F. power enhanced the crystallinity for amorphous Si films while deteriorated the crystallinity for partially crystallized Si films on carbon fibers. And it was observed that the crystallinity of silicon films on carbon fibers was increased drastically by thermal annealing above 500 °C.",

author = "Eulyong Chae and Kyumin Lee and Hwan Lee and Daehong Ko and Hongsik Jeong and Hyunchul Sohn",

note = "Funding Information: This work was supported by Strategic Core Materials Technology Development Program (Project No. 10043793 /KEIT) and the IT R&D Program of the Korean Ministry of Trade, Industry and Energy (MTIE/KEIT, Project No. 10043436 ), and by the third stage of the Brain Korea 21 Plus project (BK21 Plus). Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

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doi = "10.1016/j.tsf.2015.08.029",

language = "English",

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AU - Chae, Eulyong

AU - Lee, Kyumin

AU - Lee, Hwan

AU - Ko, Daehong

AU - Jeong, Hongsik

AU - Sohn, Hyunchul

N1 - Funding Information: This work was supported by Strategic Core Materials Technology Development Program (Project No. 10043793 /KEIT) and the IT R&D Program of the Korean Ministry of Trade, Industry and Energy (MTIE/KEIT, Project No. 10043436 ), and by the third stage of the Brain Korea 21 Plus project (BK21 Plus). Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

PY - 2015/9/30

Y1 - 2015/9/30

N2 - In this work, silicon films were deposited on carbon fibers using very high frequency (60 MHz) plasma enhanced chemical vapor deposition (VHF-PECVD) to form Si/carbon fiber hybrid structures for the applications to the flexible solar cell. The effect of deposition conditions of VHF-PECVD such as hydrogen flow rate and R.F. power on the microstructure of Si films was investigated with Raman spectroscopy, X-ray diffraction, field emission scanning electron microscopy, and high resolution transmission electron microscopy. The crystallinity of Si films on carbon fibers showed strong dependence on the hydrogen flow rate and was changed from amorphous structure to partially crystallized structure with increasing hydrogen flow rate. Increasing R.F. power enhanced the crystallinity for amorphous Si films while deteriorated the crystallinity for partially crystallized Si films on carbon fibers. And it was observed that the crystallinity of silicon films on carbon fibers was increased drastically by thermal annealing above 500 °C.

AB - In this work, silicon films were deposited on carbon fibers using very high frequency (60 MHz) plasma enhanced chemical vapor deposition (VHF-PECVD) to form Si/carbon fiber hybrid structures for the applications to the flexible solar cell. The effect of deposition conditions of VHF-PECVD such as hydrogen flow rate and R.F. power on the microstructure of Si films was investigated with Raman spectroscopy, X-ray diffraction, field emission scanning electron microscopy, and high resolution transmission electron microscopy. The crystallinity of Si films on carbon fibers showed strong dependence on the hydrogen flow rate and was changed from amorphous structure to partially crystallized structure with increasing hydrogen flow rate. Increasing R.F. power enhanced the crystallinity for amorphous Si films while deteriorated the crystallinity for partially crystallized Si films on carbon fibers. And it was observed that the crystallinity of silicon films on carbon fibers was increased drastically by thermal annealing above 500 °C.

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Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor deposition

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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