Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents

Soon Mok Ha; Do Hyun Kim; Hyung-Ho Park; Tae Song Kim

doi:10.1016/S0257-8972(99)00372-2

Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents

Soon Mok Ha, Do Hyun Kim, Hyung-Ho Park, Tae Song Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article

16 Citations (Scopus)

Abstract

The effect of excess Pb and O content on the formation of PZT films with perovskite phase and their electrical properties has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on Pt/Ti/SiO ₂ /Si substrates. When PZT films were deposited at room temperature, they crystallized with pyrochlore and perovskite phases after rapid thermal annealing (RTA) treatments at 520 and 700 °C, respectively. But with substrate-heating at 520 °C, the PZT films crystallized directly with the perovskite phase. After RTA treatments at 600 and 700 °C of the PZT films deposited at 520 °C, a reduction of the coercive field (E _c ) and amelioration of the fatigue property were found. An improvement of the I-V characteristic was also observed. This amelioration of ferroelectric properties of high temperature annealed PZT films were explained using a `space charge layer model'.

Original language	English
Pages (from-to)	525-530
Number of pages	6
Journal	Thin Solid Films
Volume	355
DOIs	https://doi.org/10.1016/S0257-8972(99)00372-2
Publication status	Published - 1999 Nov 1
Event	Proceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films - San Diego, CA, USA Duration: 1999 Apr 12 → 1999 Apr 15

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Cite this

Ha, S. M., Kim, D. H., Park, H-H., & Kim, T. S. (1999). Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents. Thin Solid Films, 355, 525-530. https://doi.org/10.1016/S0257-8972(99)00372-2

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title = "Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents",

abstract = " The effect of excess Pb and O content on the formation of PZT films with perovskite phase and their electrical properties has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on Pt/Ti/SiO 2 /Si substrates. When PZT films were deposited at room temperature, they crystallized with pyrochlore and perovskite phases after rapid thermal annealing (RTA) treatments at 520 and 700 °C, respectively. But with substrate-heating at 520 °C, the PZT films crystallized directly with the perovskite phase. After RTA treatments at 600 and 700 °C of the PZT films deposited at 520 °C, a reduction of the coercive field (E c ) and amelioration of the fatigue property were found. An improvement of the I-V characteristic was also observed. This amelioration of ferroelectric properties of high temperature annealed PZT films were explained using a `space charge layer model'. ",

author = "Ha, {Soon Mok} and Kim, {Do Hyun} and Hyung-Ho Park and Kim, {Tae Song}",

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T1 - Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents

AU - Ha, Soon Mok

AU - Kim, Do Hyun

AU - Park, Hyung-Ho

AU - Kim, Tae Song

PY - 1999/11/1

Y1 - 1999/11/1

N2 - The effect of excess Pb and O content on the formation of PZT films with perovskite phase and their electrical properties has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on Pt/Ti/SiO 2 /Si substrates. When PZT films were deposited at room temperature, they crystallized with pyrochlore and perovskite phases after rapid thermal annealing (RTA) treatments at 520 and 700 °C, respectively. But with substrate-heating at 520 °C, the PZT films crystallized directly with the perovskite phase. After RTA treatments at 600 and 700 °C of the PZT films deposited at 520 °C, a reduction of the coercive field (E c ) and amelioration of the fatigue property were found. An improvement of the I-V characteristic was also observed. This amelioration of ferroelectric properties of high temperature annealed PZT films were explained using a `space charge layer model'.

AB - The effect of excess Pb and O content on the formation of PZT films with perovskite phase and their electrical properties has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on Pt/Ti/SiO 2 /Si substrates. When PZT films were deposited at room temperature, they crystallized with pyrochlore and perovskite phases after rapid thermal annealing (RTA) treatments at 520 and 700 °C, respectively. But with substrate-heating at 520 °C, the PZT films crystallized directly with the perovskite phase. After RTA treatments at 600 and 700 °C of the PZT films deposited at 520 °C, a reduction of the coercive field (E c ) and amelioration of the fatigue property were found. An improvement of the I-V characteristic was also observed. This amelioration of ferroelectric properties of high temperature annealed PZT films were explained using a `space charge layer model'.

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DO - 10.1016/S0257-8972(99)00372-2

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VL - 355

SP - 525

EP - 530

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

T2 - Proceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films

Y2 - 12 April 1999 through 15 April 1999

ER -

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10.1016/S0257-8972(99)00372-2