Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents

Soon Mok Ha, Do Hyun Kim, Hyung-Ho Park, Tae Song Kim

Research output: Contribution to journalConference article

16 Citations (Scopus)

Abstract

The effect of excess Pb and O content on the formation of PZT films with perovskite phase and their electrical properties has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on Pt/Ti/SiO 2 /Si substrates. When PZT films were deposited at room temperature, they crystallized with pyrochlore and perovskite phases after rapid thermal annealing (RTA) treatments at 520 and 700 °C, respectively. But with substrate-heating at 520 °C, the PZT films crystallized directly with the perovskite phase. After RTA treatments at 600 and 700 °C of the PZT films deposited at 520 °C, a reduction of the coercive field (E c ) and amelioration of the fatigue property were found. An improvement of the I-V characteristic was also observed. This amelioration of ferroelectric properties of high temperature annealed PZT films were explained using a `space charge layer model'.

Original languageEnglish
Pages (from-to)525-530
Number of pages6
JournalThin Solid Films
Volume355
DOIs
Publication statusPublished - 1999 Nov 1
EventProceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films - San Diego, CA, USA
Duration: 1999 Apr 121999 Apr 15

Fingerprint

Crystallization
Ferroelectric materials
crystallization
Perovskite
Rapid thermal annealing
annealing
Substrates
Electric space charge
space charge
Electric properties
electrical properties
Fatigue of materials
Heating
Temperature
heating
room temperature
perovskite

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents",
abstract = "The effect of excess Pb and O content on the formation of PZT films with perovskite phase and their electrical properties has been investigated. PZT films were sputter-deposited from a target containing 50{\%} excess Pb and O on Pt/Ti/SiO 2 /Si substrates. When PZT films were deposited at room temperature, they crystallized with pyrochlore and perovskite phases after rapid thermal annealing (RTA) treatments at 520 and 700 °C, respectively. But with substrate-heating at 520 °C, the PZT films crystallized directly with the perovskite phase. After RTA treatments at 600 and 700 °C of the PZT films deposited at 520 °C, a reduction of the coercive field (E c ) and amelioration of the fatigue property were found. An improvement of the I-V characteristic was also observed. This amelioration of ferroelectric properties of high temperature annealed PZT films were explained using a `space charge layer model'.",
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Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents. / Ha, Soon Mok; Kim, Do Hyun; Park, Hyung-Ho; Kim, Tae Song.

In: Thin Solid Films, Vol. 355, 01.11.1999, p. 525-530.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents

AU - Ha, Soon Mok

AU - Kim, Do Hyun

AU - Park, Hyung-Ho

AU - Kim, Tae Song

PY - 1999/11/1

Y1 - 1999/11/1

N2 - The effect of excess Pb and O content on the formation of PZT films with perovskite phase and their electrical properties has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on Pt/Ti/SiO 2 /Si substrates. When PZT films were deposited at room temperature, they crystallized with pyrochlore and perovskite phases after rapid thermal annealing (RTA) treatments at 520 and 700 °C, respectively. But with substrate-heating at 520 °C, the PZT films crystallized directly with the perovskite phase. After RTA treatments at 600 and 700 °C of the PZT films deposited at 520 °C, a reduction of the coercive field (E c ) and amelioration of the fatigue property were found. An improvement of the I-V characteristic was also observed. This amelioration of ferroelectric properties of high temperature annealed PZT films were explained using a `space charge layer model'.

AB - The effect of excess Pb and O content on the formation of PZT films with perovskite phase and their electrical properties has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on Pt/Ti/SiO 2 /Si substrates. When PZT films were deposited at room temperature, they crystallized with pyrochlore and perovskite phases after rapid thermal annealing (RTA) treatments at 520 and 700 °C, respectively. But with substrate-heating at 520 °C, the PZT films crystallized directly with the perovskite phase. After RTA treatments at 600 and 700 °C of the PZT films deposited at 520 °C, a reduction of the coercive field (E c ) and amelioration of the fatigue property were found. An improvement of the I-V characteristic was also observed. This amelioration of ferroelectric properties of high temperature annealed PZT films were explained using a `space charge layer model'.

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