Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents

Soon Mok Ha; Do Hyun Kim; Hyung Ho Park; Tae Song Kim

doi:10.1016/S0257-8972(99)00372-2

Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents

Soon Mok Ha, Do Hyun Kim, Hyung Ho Park, Tae Song Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article

16 Citations (Scopus)

Abstract

The effect of excess Pb and O content on the formation of PZT films with perovskite phase and their electrical properties has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on Pt/Ti/SiO₂/Si substrates. When PZT films were deposited at room temperature, they crystallized with pyrochlore and perovskite phases after rapid thermal annealing (RTA) treatments at 520 and 700 °C, respectively. But with substrate-heating at 520 °C, the PZT films crystallized directly with the perovskite phase. After RTA treatments at 600 and 700 °C of the PZT films deposited at 520 °C, a reduction of the coercive field (E_c) and amelioration of the fatigue property were found. An improvement of the I-V characteristic was also observed. This amelioration of ferroelectric properties of high temperature annealed PZT films were explained using a `space charge layer model'.

Original language	English
Pages (from-to)	525-530
Number of pages	6
Journal	Thin Solid Films
Volume	355
DOIs	https://doi.org/10.1016/S0257-8972(99)00372-2
Publication status	Published - 1999 Nov 1
Event	Proceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films - San Diego, CA, USA Duration: 1999 Apr 12 → 1999 Apr 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0257-8972(99)00372-2

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Ha, S. M., Kim, D. H., Park, H. H., & Kim, T. S. (1999). Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents. Thin Solid Films, 355, 525-530. https://doi.org/10.1016/S0257-8972(99)00372-2

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title = "Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents",

abstract = "The effect of excess Pb and O content on the formation of PZT films with perovskite phase and their electrical properties has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on Pt/Ti/SiO2/Si substrates. When PZT films were deposited at room temperature, they crystallized with pyrochlore and perovskite phases after rapid thermal annealing (RTA) treatments at 520 and 700 °C, respectively. But with substrate-heating at 520 °C, the PZT films crystallized directly with the perovskite phase. After RTA treatments at 600 and 700 °C of the PZT films deposited at 520 °C, a reduction of the coercive field (Ec) and amelioration of the fatigue property were found. An improvement of the I-V characteristic was also observed. This amelioration of ferroelectric properties of high temperature annealed PZT films were explained using a `space charge layer model'.",

author = "Ha, {Soon Mok} and Kim, {Do Hyun} and Park, {Hyung Ho} and Kim, {Tae Song}",

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TY - JOUR

T1 - Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents

AU - Ha, Soon Mok

AU - Kim, Do Hyun

AU - Park, Hyung Ho

AU - Kim, Tae Song

PY - 1999/11/1

Y1 - 1999/11/1

N2 - The effect of excess Pb and O content on the formation of PZT films with perovskite phase and their electrical properties has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on Pt/Ti/SiO2/Si substrates. When PZT films were deposited at room temperature, they crystallized with pyrochlore and perovskite phases after rapid thermal annealing (RTA) treatments at 520 and 700 °C, respectively. But with substrate-heating at 520 °C, the PZT films crystallized directly with the perovskite phase. After RTA treatments at 600 and 700 °C of the PZT films deposited at 520 °C, a reduction of the coercive field (Ec) and amelioration of the fatigue property were found. An improvement of the I-V characteristic was also observed. This amelioration of ferroelectric properties of high temperature annealed PZT films were explained using a `space charge layer model'.

AB - The effect of excess Pb and O content on the formation of PZT films with perovskite phase and their electrical properties has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on Pt/Ti/SiO2/Si substrates. When PZT films were deposited at room temperature, they crystallized with pyrochlore and perovskite phases after rapid thermal annealing (RTA) treatments at 520 and 700 °C, respectively. But with substrate-heating at 520 °C, the PZT films crystallized directly with the perovskite phase. After RTA treatments at 600 and 700 °C of the PZT films deposited at 520 °C, a reduction of the coercive field (Ec) and amelioration of the fatigue property were found. An improvement of the I-V characteristic was also observed. This amelioration of ferroelectric properties of high temperature annealed PZT films were explained using a `space charge layer model'.

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U2 - 10.1016/S0257-8972(99)00372-2

DO - 10.1016/S0257-8972(99)00372-2

M3 - Conference article

AN - SCOPUS:0033364926

VL - 355

SP - 525

EP - 530

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

T2 - Proceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films

Y2 - 12 April 1999 through 15 April 1999

ER -