Abstract
The effect of excess Pb and O content on the formation of PZT films with perovskite phase and their electrical properties has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on Pt/Ti/SiO 2 /Si substrates. When PZT films were deposited at room temperature, they crystallized with pyrochlore and perovskite phases after rapid thermal annealing (RTA) treatments at 520 and 700 °C, respectively. But with substrate-heating at 520 °C, the PZT films crystallized directly with the perovskite phase. After RTA treatments at 600 and 700 °C of the PZT films deposited at 520 °C, a reduction of the coercive field (E c ) and amelioration of the fatigue property were found. An improvement of the I-V characteristic was also observed. This amelioration of ferroelectric properties of high temperature annealed PZT films were explained using a `space charge layer model'.
| Original language | English |
|---|---|
| Pages (from-to) | 525-530 |
| Number of pages | 6 |
| Journal | Thin Solid Films |
| Volume | 355 |
| DOIs | |
| Publication status | Published - 1999 Nov 1 |
| Event | Proceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films - San Diego, CA, USA Duration: 1999 Apr 12 → 1999 Apr 15 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
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Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents. / Ha, Soon Mok; Kim, Do Hyun; Park, Hyung-Ho; Kim, Tae Song.
In: Thin Solid Films, Vol. 355, 01.11.1999, p. 525-530.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents
AU - Ha, Soon Mok
AU - Kim, Do Hyun
AU - Park, Hyung-Ho
AU - Kim, Tae Song
PY - 1999/11/1
Y1 - 1999/11/1
N2 - The effect of excess Pb and O content on the formation of PZT films with perovskite phase and their electrical properties has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on Pt/Ti/SiO 2 /Si substrates. When PZT films were deposited at room temperature, they crystallized with pyrochlore and perovskite phases after rapid thermal annealing (RTA) treatments at 520 and 700 °C, respectively. But with substrate-heating at 520 °C, the PZT films crystallized directly with the perovskite phase. After RTA treatments at 600 and 700 °C of the PZT films deposited at 520 °C, a reduction of the coercive field (E c ) and amelioration of the fatigue property were found. An improvement of the I-V characteristic was also observed. This amelioration of ferroelectric properties of high temperature annealed PZT films were explained using a `space charge layer model'.
AB - The effect of excess Pb and O content on the formation of PZT films with perovskite phase and their electrical properties has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on Pt/Ti/SiO 2 /Si substrates. When PZT films were deposited at room temperature, they crystallized with pyrochlore and perovskite phases after rapid thermal annealing (RTA) treatments at 520 and 700 °C, respectively. But with substrate-heating at 520 °C, the PZT films crystallized directly with the perovskite phase. After RTA treatments at 600 and 700 °C of the PZT films deposited at 520 °C, a reduction of the coercive field (E c ) and amelioration of the fatigue property were found. An improvement of the I-V characteristic was also observed. This amelioration of ferroelectric properties of high temperature annealed PZT films were explained using a `space charge layer model'.
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UR - http://www.scopus.com/inward/citedby.url?scp=0033364926&partnerID=8YFLogxK
U2 - 10.1016/S0257-8972(99)00372-2
DO - 10.1016/S0257-8972(99)00372-2
M3 - Conference article
AN - SCOPUS:0033364926
VL - 355
SP - 525
EP - 530
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -