Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents

Soon Mok Ha, Do Hyun Kim, Hyung Ho Park, Tae Song Kim

Research output: Contribution to journalConference article

16 Citations (Scopus)

Abstract

The effect of excess Pb and O content on the formation of PZT films with perovskite phase and their electrical properties has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on Pt/Ti/SiO2/Si substrates. When PZT films were deposited at room temperature, they crystallized with pyrochlore and perovskite phases after rapid thermal annealing (RTA) treatments at 520 and 700 °C, respectively. But with substrate-heating at 520 °C, the PZT films crystallized directly with the perovskite phase. After RTA treatments at 600 and 700 °C of the PZT films deposited at 520 °C, a reduction of the coercive field (Ec) and amelioration of the fatigue property were found. An improvement of the I-V characteristic was also observed. This amelioration of ferroelectric properties of high temperature annealed PZT films were explained using a `space charge layer model'.

Original languageEnglish
Pages (from-to)525-530
Number of pages6
JournalThin Solid Films
Volume355
DOIs
Publication statusPublished - 1999 Nov 1
EventProceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films - San Diego, CA, USA
Duration: 1999 Apr 121999 Apr 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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