Crystallization behavior caused by N doping in Ge 1 Sb 4 Te 7 for PCRAM application

Hyung Keun Kim, Jae Sung Roh, Doo Jin Choi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this paper, we reported the effect of N doping on the crystallization behavior of Ge 1 Sb 4 Te 7 thin films. It was clearly shown that the phase transition of Ge 1 Sb 4 Te 7 occurred from amorphous to hexagonal state and meta-stable FCC state is shown between these phase transition processes. N doping effectively suppressed crystallization process and the crystal grain size was decreased from 21 nm to 14 nm with increasing N doping contents. N-doped film was found to have nucleation dominant crystallization process and the time demanded to start phase transition is shorter compared to un-doped film. In the case of the film deposited at 9 × 10 -3 Torr without N doping, 70 ns is required for crystallization to occur at 36 mW of laser power, however, 30 ns is required in the case of N-doped film. These results are demonstrated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and static test.

Original languageEnglish
Pages (from-to)6422-6428
Number of pages7
JournalThin Solid Films
Volume518
Issue number22
DOIs
Publication statusPublished - 2010 Sep 1

Fingerprint

Crystallization
Doping (additives)
crystallization
Phase transitions
static tests
Nucleation
grain size
nucleation
Transmission electron microscopy
X ray diffraction
Thin films
transmission electron microscopy
Crystals
ganhuangenin
Lasers
thin films
diffraction
crystals
lasers
x rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kim, Hyung Keun ; Roh, Jae Sung ; Choi, Doo Jin. / Crystallization behavior caused by N doping in Ge 1 Sb 4 Te 7 for PCRAM application In: Thin Solid Films. 2010 ; Vol. 518, No. 22. pp. 6422-6428.
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Crystallization behavior caused by N doping in Ge 1 Sb 4 Te 7 for PCRAM application . / Kim, Hyung Keun; Roh, Jae Sung; Choi, Doo Jin.

In: Thin Solid Films, Vol. 518, No. 22, 01.09.2010, p. 6422-6428.

Research output: Contribution to journalArticle

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AB - In this paper, we reported the effect of N doping on the crystallization behavior of Ge 1 Sb 4 Te 7 thin films. It was clearly shown that the phase transition of Ge 1 Sb 4 Te 7 occurred from amorphous to hexagonal state and meta-stable FCC state is shown between these phase transition processes. N doping effectively suppressed crystallization process and the crystal grain size was decreased from 21 nm to 14 nm with increasing N doping contents. N-doped film was found to have nucleation dominant crystallization process and the time demanded to start phase transition is shorter compared to un-doped film. In the case of the film deposited at 9 × 10 -3 Torr without N doping, 70 ns is required for crystallization to occur at 36 mW of laser power, however, 30 ns is required in the case of N-doped film. These results are demonstrated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and static test.

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