Crystallization behavior caused by N doping in Ge1Sb 4Te7 for PCRAM application

Hyung Keun Kim, Jae Sung Roh, Doo Jin Choi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In this paper, we reported the effect of N doping on the crystallization behavior of Ge1Sb4Te7 thin films. It was clearly shown that the phase transition of Ge1Sb4Te 7 occurred from amorphous to hexagonal state and meta-stable FCC state is shown between these phase transition processes. N doping effectively suppressed crystallization process and the crystal grain size was decreased from 21 nm to 14 nm with increasing N doping contents. N-doped film was found to have nucleation dominant crystallization process and the time demanded to start phase transition is shorter compared to un-doped film. In the case of the film deposited at 9 × 10-3 Torr without N doping, 70 ns is required for crystallization to occur at 36 mW of laser power, however, 30 ns is required in the case of N-doped film. These results are demonstrated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and static test.

Original languageEnglish
Pages (from-to)6422-6428
Number of pages7
JournalThin Solid Films
Issue number22
Publication statusPublished - 2010 Sept 1

Bibliographical note

Funding Information:
This research was supported by Hynix Semiconductor Inc. , Korea.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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