Crystallization characteristics of nitrogen-doped Sb 2 Te 3 films for PRAM application

Myoung Sub Kim, Sung Hyuk Cho, Suk Kyoung Hong, Jae Sung Roh, Doo Jin Choi

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The Sb 2 Te 3 film is an attractive candidate for phase change random access memory (PRAM) due to its rapid crystallization speed. However, the Sb 2 Te 3 film has unstable amorphous phase. In order to improve the phase stability and easy reamorphization, the nitrogen-doped Sb 2 Te 3 films were proposed. The characteristics of nitrogen-doped Sb 2 Te 3 films were investigated using the secondary ion mass spectroscopy (SIMS), 4-point probe technique, X-ray diffraction and static test. The nitrogen doping caused the increase of crystallization temperature and sheet resistance of the Sb 2 Te 3 films. Furthermore, the crystallization speed of nitrogen-doped Sb 2 Te 3 film was superior to the Ge 2 Sb 2 Te 5 film.

Original languageEnglish
Pages (from-to)1043-1046
Number of pages4
JournalCeramics International
Volume34
Issue number4
DOIs
Publication statusPublished - 2008 May 1

Fingerprint

Crystallization
Nitrogen
Data storage equipment
Phase stability
Sheet resistance
Doping (additives)
Spectroscopy
Ions
X ray diffraction

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Kim, Myoung Sub ; Cho, Sung Hyuk ; Hong, Suk Kyoung ; Roh, Jae Sung ; Choi, Doo Jin. / Crystallization characteristics of nitrogen-doped Sb 2 Te 3 films for PRAM application In: Ceramics International. 2008 ; Vol. 34, No. 4. pp. 1043-1046.
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Crystallization characteristics of nitrogen-doped Sb 2 Te 3 films for PRAM application . / Kim, Myoung Sub; Cho, Sung Hyuk; Hong, Suk Kyoung; Roh, Jae Sung; Choi, Doo Jin.

In: Ceramics International, Vol. 34, No. 4, 01.05.2008, p. 1043-1046.

Research output: Contribution to journalArticle

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T1 - Crystallization characteristics of nitrogen-doped Sb 2 Te 3 films for PRAM application

AU - Kim, Myoung Sub

AU - Cho, Sung Hyuk

AU - Hong, Suk Kyoung

AU - Roh, Jae Sung

AU - Choi, Doo Jin

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AB - The Sb 2 Te 3 film is an attractive candidate for phase change random access memory (PRAM) due to its rapid crystallization speed. However, the Sb 2 Te 3 film has unstable amorphous phase. In order to improve the phase stability and easy reamorphization, the nitrogen-doped Sb 2 Te 3 films were proposed. The characteristics of nitrogen-doped Sb 2 Te 3 films were investigated using the secondary ion mass spectroscopy (SIMS), 4-point probe technique, X-ray diffraction and static test. The nitrogen doping caused the increase of crystallization temperature and sheet resistance of the Sb 2 Te 3 films. Furthermore, the crystallization speed of nitrogen-doped Sb 2 Te 3 film was superior to the Ge 2 Sb 2 Te 5 film.

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