Crystallization of amorphous Si thin films by the reaction of MoO 3/Al nanoengineered thermite

Jung Hyeon Bae, Do Kyung Kim, Tae Hoon Jeong, Hyun Jae Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In this work, we investigated a new crystallization method for amorphous silicon (a-Si) using a mixture of nano-energetic materials: molybdenum oxide and aluminum (MoO3/Al). The purpose of using nano-energetic materials is to improve the performance of a-Si films with a self-propagating exothermic reaction over a period of microseconds without any substrate damage. The mixture of MoO3/Al nanopowders was used for a thermite reaction for crystallization of a-Si thin films. Characterization results showed that a-Si thin films were successfully crystallized to poly-Si as evidenced by a Raman peak near 519 cm- 1. The crystalline volume fraction of poly-Si after the nanoengineered thermite reaction was about 94.7% and poly-Si grains was uniformly distributed with an average grain size of around 40-50 nm. These results indicate that high quality poly-Si thin films were successfully prepared on the substrate.

Original languageEnglish
Pages (from-to)6205-6209
Number of pages5
JournalThin Solid Films
Volume518
Issue number22
DOIs
Publication statusPublished - 2010 Sep 1

Fingerprint

thermites
Crystallization
Amorphous silicon
Polysilicon
amorphous silicon
crystallization
Thin films
thin films
Molybdenum oxide
molybdenum oxides
Exothermic reactions
exothermic reactions
Aluminum Oxide
Substrates
silicon films
Volume fraction
grain size
Crystalline materials
damage
aluminum

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Bae, Jung Hyeon ; Kim, Do Kyung ; Jeong, Tae Hoon ; Kim, Hyun Jae. / Crystallization of amorphous Si thin films by the reaction of MoO 3/Al nanoengineered thermite. In: Thin Solid Films. 2010 ; Vol. 518, No. 22. pp. 6205-6209.
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Crystallization of amorphous Si thin films by the reaction of MoO 3/Al nanoengineered thermite. / Bae, Jung Hyeon; Kim, Do Kyung; Jeong, Tae Hoon; Kim, Hyun Jae.

In: Thin Solid Films, Vol. 518, No. 22, 01.09.2010, p. 6205-6209.

Research output: Contribution to journalArticle

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