Crystallization of amorphous silicon thin films using nanoenergetic intermolecular materials with buffer layers

Choong Hee Lee, Tae Hoon Jeong, Do Kyung Kim, Woong Hee Jeong, Myung Koo Kang, Tae Hyung Hwang, Hyun Jae Kim

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Optimization of the crystallization of amorphous silicon (a-Si) using a mixture of nanoenergetic materials of iron oxide/aluminum (Fe2O3/Al) was studied. To achieve high-quality polycrystalline Si (poly-Si) thin films, silicon oxide (SiO2) and silver (Ag) layer were deposited on the a-Si as buffer layers to prevent the metal diffusion in a-Si during thermite reaction and to transport the thermal energy released from nanoenergetic materials, respectively. Raman measurement was used to define the crystallinity of poly-Si. For molar ratio of Al and Fe of 2 with 100-nm-thick-SiO2, Raman measurement showed the 519.59 cm-1 of peak position and the 5.08 cm-1 of full width at half maximum with 353 MPa of low tensile stress indicating high quality poly-Si thin film. These results showed that optimized thermite reaction could be used successfully in crystallization of a-Si to high -quality poly-Si thin films.

Original languageEnglish
Pages (from-to)1025-1031
Number of pages7
JournalJournal of Crystal Growth
Issue number4
Publication statusPublished - 2009 Feb 1


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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